IXYS DSI2X55-12A Rectifier diode Datasheet

DSI 2x55
IF(AV)M = 2x 56 A
VRRM = 1200-1600 V
Rectifier Diode
VRSM
VRRM
V
V
1300
1700
1200
1600
miniBLOC, SOT-227 B
E72873
Type
DSI 2x55-12A
DSI 2x55-16A
Symbol
Conditions
Maximum Ratings (per diode)
IFRMS
IF(AV)M
TC = 80°C; 180° sine
IFSM
TVJ = 45°C;
120
56
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
650
700
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
570
610
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2210
2060
A 2s
A 2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1620
1560
A 2s
A 2s
-40...+150
150
-40...+150
°C
°C
°C
190
W
2500
V~
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
30
g
Features
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent rectifier diodes in one
package
Planar passivated chips
●
●
I 2t
TVJ = 45°C
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque
Terminal connection torque (M4)
Weight
Symbol
Conditions
IR
TVJ = 25°C
TVJ = 150°C
VR = VRRM
VF
IF = 60 A;
TVJ = 125°C
TVJ = 25°C
VT0
rT
For power-loss calculations only
TVJ = TVJM
●
●
Applications
Input rectifier diode
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
●
●
●
●
●
miniBLOC, SOT-227 B
Characteristic Values (per diode)
typ.
max.
0.3
5
mA
mA
1.25
1.20
V
V
0.8
8
V
mW
0.65
K/W
K/W
M4 screws (4x) supplied
Dim.
RthJC
RthCH
Data according to IEC 60747
0.1
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
008
© 2000 IXYS All rights reserved
1-2
DSI 2x55
80
500
A
70
A
IF 60
104
50Hz, 80% VRRM
2
As
400
IFSM
TVJ=125°C
TVJ= 25°C
VR = 0 V
I2t
TVJ = 45°C
50
TVJ = 45°C
300
103
40
TVJ = 150°C
200
30
20
TVJ = 150°C
100
10
0
0.0
0.4
1.2 V
0.8
102
0
0.001
1.6
0.01
0.1
VF
s
1
1
2
3
t
Fig. 1 Forward current versus voltage
drop per diode
4 5 6 78
ms910
t
Fig. 3 I2t versus time per diode
Fig. 2 Surge overload current
80
A
70
180
W
160
IF(AV)M
RthHA :
140
Ptot
60
0.1 K/W
0.5 K/W
1.0 K/W
2.0 K/W
4.0 K/W
7.0 K/W
120
100
80
50
40
30
60
20
40
10
20
0
0
0
20
40
60
80
100 A 0
IF(AV)M
20
40
60
80 100 120 140 °C
0
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current versus case
temperature, sine180°
0.8
K/W
ZthJC
0.6
Constants for ZthJC calculation:
0.4
i
0.2
0.0
0.001
DSI 2x55
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
© 2000 IXYS All rights reserved
s
1
1
2
3
4
5
Rthi (K/W)
ti (s)
0.031
0.0554
0.114
0.281
0.1686
0.00024
0.0036
0.0235
0.142
0.7
10
t
2-2
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