IXYS IXFH80N10Q Hiperfet power mosfets q-class Datasheet

HiPerFETTM
Power MOSFETs
IXFH 80N10Q
IXFT 80N10Q
VDSS
ID25
= 100 V
= 80
A
= 15 mW
RDS(on)
Q-Class
trr £ 200ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary data
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
80
A
IDM
TC = 25°C, pulse width limited by TJM
320
A
IAR
TC = 25°C
80
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.5
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
Maximum Ratings
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
360
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
(TO-247)
6
4
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 mA
100
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
4
V
±100
nA
TJ = 25°C
TJ = 125°C
25
1
mA
mA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
15
mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
TO-268 (IXFT) Case Style
G
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
(TAB)
S
TC = 25°C
TL
TO-247 AD (IXFH)
• IXYS advanced low gate charge
process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
98592B (7/00)
1-2
IXFH 80N10Q
IXFT 80N10Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
30
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
45
S
4500
pF
1600
pF
870
pF
TO-247 AD (IXFH) Outline
30
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70
ns
td(off)
RG = 1.5 W (External)
68
ns
30
ns
180
nC
36
nC
95
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.35
(TO-247)
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
80
A
Repetitive; pulse width limited by TJM
320
A
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
200
ns
mC
A
IF = 25A,-di/dt = 100 A/ms, VR = 50 V
TO-268AA (D3 PAK)
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
0.85
8
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim. Millimeter
Min. Max.
Inches
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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