ON MJW16018 Npn silicon power transistor Datasheet

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by MJ16018/D
SEMICONDUCTOR TECHNICAL DATA
 *Motorola Preferred Device
1.5 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Features:
•
•
•
•
•
•
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
POWER TRANSISTORS
10 AMPERES
800 VOLTS
125 AND 175 WATTS
• Collector–Emitter Voltage — VCEV = 1500 Vdc
• Fast Turn–Off Times
80 ns Inductive Fall Time — 100_C (Typ)
110 ns Inductive Crossover Time — 100_C (Typ)
4.5 µs Inductive Storage Time — 100_C (Typ)
• 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
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MAXIMUM RATINGS
Rating
Symbol
MJ16018
MJW16018
Unit
Collector–Emitter Voltage
VCEO(sus)
800
Vdc
Collector–Emitter Voltage
VCEV
1500
Vdc
Emitter–Base Voltage
VEB
6
Vdc
Collector Current — Continuous
— Peak(1)
IC
ICM
10
15
Adc
Base Current — Continuous
— Peak(1)
IB
IBM
8
12
Adc
Total Power Dissipation
@ TC = 25_C
@ TC = 100_C
Derate above TC = 25_C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
175
100
1
125
50
1
Watts
– 65 to 200
– 55 to 150
_C
CASE 1–07
TO–204AA
MJ16018
W/_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
RθJC
Lead Temperature for Soldering
Purposes: 1/8″ from Case for
5 Seconds
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle
TL
Max
1
Unit
1
275
_C/W
_C
CASE 340F–03
TO–247AE
MJW16018
10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
800
—
—
Vdc
—
—
—
—
0.25
1.5
OFF CHARACTERISTICS(1)
Collector–Emitter Sustaining Voltage (Table 1) (IC = 50 mA, IB = 0)
Collector Cutoff Current
(VCEV = 1500 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 1500 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
mAdc
Collector Cutoff Current (VCE = 1500 Vdc, RBE = 50 Ω, TC = 100_C)
ICER
—
—
2.5
mAdc
Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)
IEBO
—
—
0.1
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 13
RBSOA
See Figure 14
ON CHARACTERISTICS(1)
Collector–Emitter Saturation Voltage
(IC = 5 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 5 Adc)
(IC = 5 Adc, IB = 2 Adc, TC = 100_C)
VCE(sat)
Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc)
Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc, TC = 100_C)
DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)
Vdc
—
—
—
—
—
—
1
5
1.5
VBE(sat)
—
—
—
—
1.5
1.5
Vdc
hFE
4
—
—
—
Cob
—
—
450
pF
tsv
—
4000
8000
ns
tfi
—
60
200
tc
—
90
300
tsv
—
4500
9000
tfi
—
80
250
tc
—
110
375
td
—
85
200
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz)
SWITCHING CHARACTERISTICS
Inductive Load (Table 1)
Storage Time
Baker Clamped
(IC = 5 Adc,
IB1 = 2 Adc,
VBE(off) = 2 Vdc,
VCE(pk) = 400 Vdc)
PW = 25 µs
Fall Time
Crossover Time
Storage Time
Fall Time
(TJ = 25_C)
(TJ = 100_C)
Crossover Time
Resistive Load (Table 1)
Delay Time
Baker Clamped
(IC = 5 Adc, VCC = 250 Vdc,
IB1 = 2 Adc, IB2 = 2 Adc,
RB2 = 3 Ω, PW = 25 µs,
Duty Cycle
2%)
Rise Time
Storage Time
Fall Time
(1) Pulse Test: PW = 300 µs, Duty Cycle
25°C
0°C
3
2
1
0.15 0.2
VCE = 5 V
0.3
2
5
0.5 0.7 1
3
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
2
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
TC = 100°C
20
10
7
5
—
900
2000
—
4500
9000
tf
—
200
400
2%.
100
70
50
30
tr
ts
ns
7
10
15
10
7
5
3
2
IC = 1 A
3A
5A
8A
10 A
3
5
1
0.7
0.5
0.3
0.2
TC = 25°C
0.1
0.07 0.1
0.2
0.3
0.5 0.7 1
2
IB, BASE CURRENT (AMPS)
Figure 2. Collector Saturation Region
Motorola Bipolar Power Transistor Device Data
7
10
7
5
5
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
TYPICAL STATIC CHARACTERISTICS
IC/IB = 5
TC = 100°C
3
IC/IB = 5
TC = 25°C
2
1
0.7
0.5
IC/IB = 2.5
TC = 100°C
IC/IB = 2.5
TC = 25°C
0.3
0.2
0.1
0.1
0.2
0.3
1
0.5 0.7
3
2
5
7
10
IC/IB = 2.5
1
0.7
0.5
5
0.3
0.2
0.1
0.07
0.05
TC = 25°C THRU 100°C
0.1
0.2
0.3
0.5 0.7
1
3
2
7
5
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Region
Figure 4. Base–Emitter Saturation Region
104
10
10K
Cib
103
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT ( µ A)
3
2
TJ = 150°C
102
125°C
100°C
101
75°C
REVERSE
100
10–1
– 0.4
25°C
0
– 0.2
+ 0.2
+ 0.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
100
1
+ 0.6
Cob
TC = 25°C
10
VCE = 250 V
FORWARD
1K
1
2
5
10
20
50 100 200
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
500
1K
Figure 6. Typical Capacitance
Figure 5. Collector Cutoff Region
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
20
5
10
IC/IB = 2.5
7
5
2.5
3
2
1
0.7
0.5
VBE(off) = 2 V
TC = 100°C
0.3
0.2
IC/IB = 2.5
300
t fi , FALL TIME (ns)
t sv, STORAGE TIME (µ s)
1000
700
500
5
5
200
2.5
100
70
50
5
30
NO BAKER CLAMP
BAKER CLAMPED
VBE(off) = 2 V
TC = 100°C
20
NO BAKER CLAMP
BAKER CLAMPED
10
1
2
3
5
7
10
1
2
3
5
7
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Storage Time
Figure 8. Inductive Switching Fall Time
Motorola Bipolar Power Transistor Device Data
10
3
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
2000
6
t sv, STORAGE TIME (µ s)
300
200
5
2.5
5
100
70
50
VBE(off) = 2 V
TC = 100°C
30
20
NO BAKER CLAMP
BAKER CLAMPED
4
3
IC = 5 A
IB1 = 2 A
IB2 = 2 A OR
VBE = – 2 V
2
1
0
1
I B2 , REVERSE BASE CURRENT (AMPS)
5
IC/IB = 2.5
700
500
2
3
5
7
10
1
5
9
13
17
PULSE WIDTH (µs)
Figure 9. Inductive Switching Crossover Time
Figure 10. (tsv) Storage Time versus IB1
Pulse Width
IC pk
6
5
25
21
IC, COLLECTOR CURRENT (AMPS)
IC = 5 A
IB1 = 2 A
VCE = 400 V
4
3
VCE(pk)
90% VCE(pk)
VOLTAGE AND CURRENT
t c , CROSSOVER TIME (ns)
1000
IC
tsv
90% IC(pk)
trv
tfi
tti
tc
VCE
IB
10% VCE(pk)
90% IB1
10%
IC pk
2% IC
2
1
–1
–2
–3
–4
–5
–6
VBE(off), REVERSE BASE–EMITTER VOLTAGE (VOLTS)
TIME
Figure 11. Reverse Base Current versus
Off Voltage
Figure 12. Inductive Switching Measurements
GUARANTEED SAFE OPERATING AREA LIMITS
50
30
20
TC = 25°C
10
5
3
2
10 µs
MJ16018
dc
MJW16018
1 ms
1
0.5
0.3
0.2
0.1
10
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
15 20 30
50
100
200 300
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Maximum Forward Bias
Safe Operating Area
4
IC(pk) , PEAK COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
1K
16
14
12
IC/IB1 = 2.5, 5
10
8
TC ≤ 100°C
6
VBE(off) = 2 V
4
VBE(off) = 0 V
2
0
0
200
400 600 800 1K 1.2K 1.4K 1.6K 1.8K
VCE(pk), PEAK COLLECTOR VOLTAGE (VOLTS)
Figure 14. Maximum Reverse Bias
Safe Operating Area
Motorola Bipolar Power Transistor Device Data
2K
POWER DERATING FACTOR (%)
100
SECOND BREAKDOWN
DERATING
80
60
THERMAL
DERATING
40
MJ16018
MJW16018
20
0
0
40
80
120
TC, CASE TEMPERATURE (°C)
160
200
Figure 15. Power Derating
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 13 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15.
T J(pk) may be calculated from the data in Figure 16. At
high case temperatures, thermal limitations will reduce the
1.0
0.7
0.5
0.3
0.2
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 14 gives the RBSOA characteristics.
D = 0.5
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
P(pk)
RθJC(t) = r(t) RθJC
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME @ t1
TJ(pk) – TC = P(pk) RθJC(t)
0.05
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
1.0 k
Figure 16. Thermal Response
Motorola Bipolar Power Transistor Device Data
5
Input
Conditions
6
Circuit
Values
Test Circuit
Motorola Bipolar Power Transistor Device Data
VCC
Lcoil (I Cpk)
–V
+V
A
L = 10 mH
RB2 = ∞
VCC = 20 Volts
I(pk) = 50 mA
S1 Closed
T 1 adjusted to obtain IC(pk)
T1 ≈
0V
T1
V off
50 Ω
+10
1 µF
+15
500 µ F
S1
MUR105
*Tektronix AM503
P6302 or Equivalent
*I B
MUR105
MUR1100
Vclamp
MUR8100
L
1 µF
Scope — Tektronix
7403 or Equivalent
T.U.T.
*I C
L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for
desired IB1
S1 Closed
MJE210
MUR105
MTP8P10
100 µ F
Drive Circuit
RBSOA
100 Ω
150 Ω
150 Ω
Note: Adjust Voff to obtain desired VBE(off) at Point A
VCEO(sus)
A
VCC
IB
VCE
IC
V CE(pk)
I B2
I B1
I C(pk)
L = 200 µH
RB2 = 0 when VBE(off)
is specified or
selected for desired I B2
VCC ≈ 20 Volts, Adjusted to obtain
desired IC
RB1 selected for desired IB1
S1 = Open for baker
clamp condition
MTP12N10
R B2
R B1
MTP8P10
Inductive Switching
A
Table 1. Test Conditions for Dynamic Performance
RB
50 Ω
*I B
S1
MUR105
MUR105
MUR1100
T.U.T.
for td and t r
VCC = 250 Volts
RB selected for desired IB1
RL selected for desired IC
for ts and t f
VCC = 250 Volts
RB = 0
RB1 & RB2 selected for IB1 & IB2
R L selected for desired I C
For ts and t f :
Inductive Switching Drive
Circuit
t r ≤ 15 ns
≈ 11 V
*Tektronix AM503
P6302 or Equivalent
0
V in
H.P. 214
OR
EQUIV.
P.G.
For t d and t f :
Resistive Switching
*I C
A
VCC
RL
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
–T–
E
D
K
2 PL
0.13 (0.005)
U
M
Y
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
–Y–
L
V
T Q
M
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
0.25 (0.010)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
–T–
–Q–
T B M
E
–B–
C
4
U
A
R
1
K
2
3
–Y–
P
F
V
D
0.25 (0.010)
M
L
Y Q
S
H
J
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MILLIMETERS
MIN
MAX
20.40
20.90
15.44
15.95
4.70
5.21
1.09
1.30
1.50
1.63
1.80
2.18
5.45 BSC
2.56
2.87
0.48
0.68
15.57
16.08
7.26
7.50
3.10
3.38
3.50
3.70
3.30
3.80
5.30 BSC
3.05
3.40
STYLE 3:
PIN 1.
2.
3.
4.
G
INCHES
MIN
MAX
0.803
0.823
0.608
0.628
0.185
0.205
0.043
0.051
0.059
0.064
0.071
0.086
0.215 BSC
0.101
0.113
0.019
0.027
0.613
0.633
0.286
0.295
0.122
0.133
0.138
0.145
0.130
0.150
0.209 BSC
0.120
0.134
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340F–03
TO–247AE
ISSUE E
Motorola Bipolar Power Transistor Device Data
7
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8
◊
Motorola Bipolar Power Transistor Device Data
*MJ16018/D*
MJ16018/D
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