Microsemi APTM100DA18CT1G Boost chopper mosfet sic chopper diode power module Datasheet

APTM100DA18CT1G
VDSS = 1000V
RDSon = 180mΩ typ @ Tj = 25°C
ID = 40A @ Tc = 25°C
Boost chopper
MOSFET + SiC chopper diode
Power Module
Application
5
6
11
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1
Features
3
4
Q2
•
NTC
9
Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
10
1
2
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
12
•
•
•
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
1000
40
30
260
±30
216
657
33
Unit
V
September, 2009
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–5
APTM100DA18CT1G – Rev 0
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
•
•
•
•
APTM100DA18CT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS =1000V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 33A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Min
3
Typ
180
4
Max
100
500
216
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
14800
1555
196
pF
570
VGS = 10V
VBus = 500V
ID = 33A
nC
100
270
85
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 33A
RG = 2.2Ω
75
ns
285
70
SiC chopper diode ratings and characteristics
IF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
64
112
20
1.6
2.3
400
2000
VF
Diode Forward Voltage
IF = 20A
QC
Total Capacitive Charge
IF = 20A, VR = 600V
di/dt =1000A/µs
80
C
Total Capacitance
f = 1MHz, VR = 200V
192
f = 1MHz, VR = 400V
138
Unit
V
µA
A
1.8
3
V
nC
pF
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Transistor
SiC Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
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M4
4000
-40
-40
-40
2.5
Typ
Max
0.19
1
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
2–5
September, 2009
IRM
Test Conditions
APTM100DA18CT1G – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTM100DA18CT1G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
1 ⎞⎤ RT: Thermistor value at T
⎡
⎛ 1
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦⎥
⎣⎢
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.9
0.16
September, 2009
0.7
0.12
0.5
0.08
0.04
0.3
0.1
Single P ulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3–5
APTM100DA18CT1G – Rev 0
Thermal Impedance (°C/W)
0.2
APTM100DA18CT1G
Low Voltage Output Characteristics
Low Voltage Output Characteristics
70
120
90
60
TJ=125°C
60
TJ=25°C
ID, Drain Current (A)
TJ=125°C
30
0
VGS=6, 7, 8 & 9V
50
40
5V
30
20
4.5V
10
0
0
5
10
15
20
0
5
VDS, Drain to Source Voltage (V)
20
25
30
Transfert Characteristics
3
60
VGS=10V
ID=33A
2.5
ID, Drain Current (A)
2
1.5
1
0.5
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ <
0.5 duty cycle
50
40
TJ=125°C
30
20
TJ=25°C
10
0
25
50
75
100
125
150
0
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (°C)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
12
100000
VDS=200V
Ciss
C, Capacitance (pF)
ID=33A
TJ=25°C
10
VDS=500V
8
6
VDS=800V
4
2
0
10000
1000
Coss
Crss
100
10
0
100
200
300
400
500
600
Gate Charge (nC)
0
50
100
150
200
VDS, Drain to Source Voltage (V)
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4–5
September, 2009
RDSon, Drain to Source ON resistance
15
VDS, Drain to Source Voltage (V)
Normalized RDS(on) vs. Temperature
VGS, Gate to Source Voltage
10
APTM100DA18CT1G – Rev 0
ID, Drain Current (A)
VGS=10V
APTM100DA18CT1G
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
40
200
30
TJ=75°C
20
TJ=125°C
TJ=175°C
10
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
150
100
TJ=75°C
TJ=125°C
50
TJ=175°C
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
0
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
1400
1200
1000
800
600
400
0
1
10
100
VR Reverse Voltage
1000
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTM100DA18CT1G – Rev 0
September, 2009
200
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