MPLUSE MP4T632539 3 volt, general purpose low noise high ft silicon transistor Datasheet

3 Volt, General Purpose Low Noise
High fT Silicon Transistor
MP4T6325 Series
SOT-23
Features
•
•
•
•
•
Low Voltage Operation (3 - 5V)
High fT (11 GHz)
Low Noise Figure with 1-5 mA Current
Inexpensive
Available on Tape and Reel
Description
The MP4T6325 series of low voltage silicon bipolar
transistors provide low noise figure at a bias of 3-5 volts and
collector current of 1 to 5 mA. These inexpensive surface
mount transistors are useful for low noise amplifiers and
VCOs in portable battery operated RF systems from VHF
through 2.5 GHz.
The MP4T6325 series has high fT (11 GHz) and provides
1.5 dB noise figure with 1-5 mA current and 3 volts bias at 1
GHz. These transistors also have low phase noise when used
in 3-5 volt low power battery operated VCOs through 2.5
GHz.
SOT-143
Chip
The MP4T6325 series are inexpensive transistors useful for
portable battery operated RF systems that require low current
drain from 3-5 volts DC supplies.
The MP4T6325 family of transistors is available in chip
(MP4T632500),
SOT-23
(MP4T632533),
SOT-143
(MP4T632539) and in Micro-X (MP4T632535) packages.
Surface mount packages are available on tape and reel.
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Electrical Specifications at 25°C
Symbol
fT
2
|S21E|
NF
GTU (max)
Gain Bandwidth
Product
Insertion Power
Gain
Noise Figure
Unilateral Gain
MAG
Maximum
Available Gain
P1dB
Power Out at 1dB
Compression
RTH (J-A)
RTH (J-C)
1.
Parameters
Thermal
Resistance
Thermal
Resistance
Test
Conditions
VCE = 3V
IC = 10 mA
VCE = 3V
IC = 10 mA
f = 1 GHz
f = 2 GHz
VCE = 3V
IC = 2 mA
f = 1 GHz
VCE = 3V
IC = 10 mA
f = 1 GHz
f = 2 GHz
VCE = 3V
IC = 10 mA
f = 2 GHz
VCE = 3V
IC = 15 mA
f = 900MHz
Junction/
Ambient
Junction/
Case
Units
MP4T632500
Chip
11 typ.
MP4T632533
SOT-23
10 typ.
MP4T632535
Micro-X
11 typ.
MP4T632539
SOT-143
11 typ.
12 typ.
8 typ.
11 typ.
7 typ.
12 typ.
8 typ.
11 typ.
7 typ.
1.5 typ.
1.6 typ.
1.5 typ.
1.6 typ.
14.5 typ.
9 typ.
13 typ.
8 typ.
14.5 typ.
9 typ.
13 typ.
8 typ.
10 typ.
9 typ.
10 typ.
9 typ.
°C/W
8 typ.

8 typ.
650 typ.
8 typ.
500 typ.
8 typ.
625 typ.
°C/W
70 max.
200 typ.
200 typ.
200 typ.
GHz
dB
dB
dB
dB
dBm
1
Junction/Heat Sink R TH (J-C)
Maximum Ratings at 25°C
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Chips or Ceramic Packages
Plastic Packages
Power Dissiapation
1.
Symbol
VCBO
VCEO
VEBO
IC
Tj
Maximum Rating
8V
6V
1.5 V
25 mA
200°C
TSTG
-65°C to +200°C
-65°C to +125°C
150mW1
PD
See Typical Performance Curves for power derating.
Electrical Specifications at 25°C
Parameters
Collector Cut-off Current
Conditions
VCB = 5 V
IE = 0
VEB = 1 V
IC = 0
VCE = 3 V
IC = 3 mA
VCB = 3 V
IE = 0
f = 1 MHz
Emitter Cut-off Current
Forward Current Gain
Collector Base
Junction Capacitance
Symbol
ICBO
Min.

Typ.

Max.
100
Units
nA
IEBO


1
µA
hFE
20
90
200

COB

0.52
0.70
pF
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
MP4T632535
Typical Scattering Parameters in the MIcro-X Package
VCE = 3 Volts, IC = 5 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.486
0.338
0.294
0.284
0.283
0.281
0.290
0.320
0.333
0.358
0.382
0.405
Angle
-80.5
-128.0
-156.3
169.8
160.9
144.6
132.5
119.4
106.6
94.9
82.7
72.7
Mag.
7.164
4.508
3.219
2.533
2.123
1.835
1.678
1.546
1.434
1.354
1.290
1.238
S21E
Angle
119.8
93.4
78.1
66.1
55.5
46.3
36.8
28.3
18.9
11.5
4.0
-4.0
Mag.
0.077
0.112
0.144
0.179
0.210
0.240
0.272
0.301
0.323
0.349
0.375
0.397
S12E
Angle
56.6
51.9
50.2
47.8
44.7
41.8
36.7
33.2
29.0
25.1
21.4
17.7
Mag
0.628
0.424
0.345
0.305
0.280
0.266
0.256
0.254
0.245
0.241
0.246
0.255
S22E
Angle
-45.8
-58.8
-65.9
-74.9
-83.1
-90.8
-103.7
-113.8
-125.4
-135.9
-146.1
-158.0
VCE = 3 Volts, IC = 10 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.326
0.288
0.288
0.305
0.319
0.330
0.335
0.372
0.385
0.417
0.445
0.468
Angle
-116.9
-158.6
174.6
160.8
145.8
131.0
121.4
110.2
99.4
88.6
77.1
67.4
Mag.
8.628
4.808
3.337
2.608
2.172
1.863
1.696
1.559
1.444
1.361
1.294
1.236
S21E
Angle
108.6
86.7
73.4
62.3
52.2
43.2
34.5
25.9
16.9
9.4
3.2
-6.0
Mag.
0.060
0.098
0.135
0.170
0.204
0.234
0.268
0.299
0.322
0.350
0.379
0.401
S12E
Angle
60.9
60.0
57.7
53.7
49.7
45.8
41.0
36.8
32.7
28.3
24.1
20.3
Mag
0.505
0.351
0.302
0.275
0.256
0.245
0.245
0.245
0.240
0.237
0.242
0.253
S22E
Mag.
9.912
5.355
3.679
2.875
2.377
2.029
1.834
1.653
1.552
1.456
1.377
1.312
S21E
Angle
104.1
84.5
72.6
61.7
52.0
43.0
34.6
26.7
17.3
10.0
2.2
-5.5
Mag.
0.053
0.092
0.132
0.165
0.200
0.230
0.265
0.290
0.317
0.344
0.372
0.392
S12E
Angle
65.0
64.6
60.8
56.6
52.2
47.7
42.7
38.9
34.1
29.7
25.2
21.3
Mag
0.428
0.295
0.263
0.236
0.222
0.215
0.218
0.220
0.218
0.213
0.212
0.218
Angle
-48.5
-56.2
-61.8
-71.7
-80.2
-88.1
-101.8
-112.9
-125.3
-136.8
-148.0
-160.2
VCE = 3 Volts, IC = 15 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.286
0.278
0.287
0.317
0.334
0.354
0.355
0.382
0.408
0.440
0.471
0.492
Angle
-136.7
-173.6
168.5
149.8
135.8
121.6
112.4
100.2
92.3
82.1
71.3
62.2
S22E
Angle
-50.5
-55.5
-60.3
-70.3
-77.5
-84.3
-97.2
-103.8
-117.6
-127.1
-137.0
-147.9
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Typical Performance Curves (MP4T632535)
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 3 V, 1 GHz vs COLLECTOR CURRENT
POWER DERATING CURVES
10
160
NOISE FIGURE (dB)
POWER DISSIPATION (mW)
120
100
80
M P4T632533, 39
(S O T -2 3 , 1 4 3 ) F R E E A I R
60
M P 4 T 6 3 2 5 3 5 (M IC R O -X )
40
ASSOCIATED GAIN (dB)
9
140
7
6
AS SO C I AT E D G AI N
5
4
N O IS E F IG U R E (50 O hm s )
3
2
1
M P4T 63250 0 (C H IP )
O N I N F IN I T E H E A T S I N K
20
8
NF
0
0
1
0
25
50
75
100
125
150
175
(O P T)
10
10 0
C O L L E C T O R C U R R E N T (m A)
A M B I E N T T E M P E R A T U R E (C )
GAIN vs FREQUENCY at VCE=3 V and IC =
10 mA
COLLECTOR-BASE CAPACITANCE (COB)
vs COLLECTOR-BASE VOLTAGE
16
0.65
GAIN (dB)
12
COLL.-BASE CAPACITANCE (pF)
14
G T U (M AX )
10
8
|S 2 1E |2
6
4
2
0
1
0 .6
0.55
0 .5
0.45
0 .4
10
1
F R E Q U E N C Y (G H z)
10
C O L L E C T O R -B ASE VO L T AG E (Vo lts)
GAIN BANDWIDTH PRODUCT (fT ) vs
COLLECTOR CURRENT at VCE=3 V
GAIN vs COLLECTOR CURRENT at 2 GHz,
VCE=3 V
12
10
10
8
GAIN (dB)
GAIN BANDWIDTH (GHz)
12
6
4
M AG
8
G T U (M AX )
|S 2 1 E |2
6
4
2
2
0
1
10
C O L L E C T O R C U R RE N T (m A)
100
0
1
10
C O L L E C T O R C U R R E N T (m A)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
10 0
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Typical Performance Curves
(MP4T632535) Cont.
DC CURRENT GAIN (hFE) vs COLLECTOR
CURRENT at VCE = 3 V
1 00
DC CURRENT GAIN
90
80
70
60
50
40
0
5
10
15
20
25
C O L L E C T O R C U R R E N T (m A )
OUTPUT POWER at 1 dB COMPRESSION
POINT vs COLLECTOR CURRENT VCE=3V
12
10
POUT - 1dB (dBm)
f = 90 0 M H z
8
6
f = 2 GH z
4
2
0
5
10
15
20
25
30
C O L L E C T O R C U R R E N T (m A)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Case Styles
Chip - MP4T632500
MP4T632500
DIM.
A
B
C
D
BASE
INCHES (Nominal)
0.013
0.013
0.0016
0.0045
MM (Nominal)
0.35
0.35
0.040
0.11
DIM.
A
B
C
D
E
F
G
H
J
K
L
INCHES
MIN.
MAX.
0.048

0.008

0.040

0.013
0.020
0.003
0.006
0.110
0.119
0.047
0.056
0.037 typical
0.075 typical
0.103

0.024

MILLIMETERS
MIN.
MAX.
1.22

0.20

1.00

0.35
0.50
0.08
0.15
2.80
3.00
1.20
1.40
0.95 typical
1.90 typical
2.60

0.60

DIM.
M
N
GRADIENT
10° max. 1
2° . . . 30°
B
D THICKNESS
EMITTER
A
C 2 PLCS.
SOT-23 - MP4T632533
MP4T632533
F
N
A
D
C olle c tor
B
M
G
K
L
H
B a se
E
J
C
E m itte r
NOTE:
1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
6
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Case Styles (Con’t)
Micro-X - MP4T632535
MP4T632535
Emitter
F
4 PLCS.
E
H
Collector
INCHES
MIN.
MAX.
0.092
0.108
0.079
0.087
0.070

0.019
0.025
0.018
0.022
0.150

0.003
0.006
45°
MILLIMETERS
MIN.
MAX.
2.34
2.74
2.01
2.21
1.78

0.48
0.64
0.046
0.56
3.81

0.08
0.15
45°
DIM.
A
B
C
D
E
F
G
H
J
K
L
M
INCHES
MIN.
MAX.
0.044

0.044

0.040

0.030
0.035
0.013
0.020
0.003
0.006
0.110
0.119
0.047
0.056
0.075 typical
0.075 typical
0.103

0.024

MILLIMETERS
MIN.
MAX.
1.10

1.10

1.00

0.75
0.90
0.35
0.50
0.08
0.15
2.80
3.00
1.20
1.40
1.90 typical
1.90 typical
2.6

0.6

DIM.
N
P
GRADIENT
10° max. 1
2° . . . 30°
DIM.
A
B
C
D
E
F
G
H
Base
B
Emitter
A
C
D
G
SOT-143 - MP4T632539
MP4T632539
B a se
E m itte r
G
P
A
J
B
N
H
L
M
E
D
F
C
K
C olle c tor E m itte r
NOTE:
1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
7
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
8
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
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