MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPSA43 MPSA42 Collector −Base Voltage MPSA43 MPSA42 Emitter−Base Voltage VCEO VCBO Value Vdc 200 300 1 EMITTER Vdc 200 300 VEBO 6.0 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD 625 5.0 mW mW/°C 1.5 12 W mW/°C −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/mW Thermal Resistance, Junction−to−Case RqJC 83.3 °C/mW Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Characteristic 2 BASE Unit Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 12 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 (TO−226AA) CASE 29−11 MARKING DIAGRAM MPS A4x AYWWG G x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 6 1 Publication Order Number: MPSA42/D MPSA42, MPSA43 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 300 200 − − 300 200 − − 6.0 − − − 0.1 0.1 − − 0.1 0.1 25 40 40 − − − − − 0.5 0.4 VBE(sat) − 0.9 Vdc fT 50 − MHz − − 3.0 4.0 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) MPSA42 MPSA43 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPSA42 MPSA43 Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MPSA42 MPSA43 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MPSA42 MPSA43 ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) MPSA42 MPSA43 Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) − Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MPSA42 MPSA43 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. http://onsemi.com 2 Ccb pF MPSA42, MPSA43 ORDERING INFORMATION Package Shipping† MPSA42G TO−92 (Pb−Free) 5000 Units / Box MPSA42RL1G TO−92 (Pb−Free) 2000 / Tape & Reel MPSA42RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel MPSA42RLRMG TO−92 (Pb−Free) 2000 / Ammo Pack MPSA42RLRPG TO−92 (Pb−Free) 2000 / Ammo Pack MPSA42ZL1G TO−92 (Pb−Free) 2000 / Ammo Pack MPSA43RLRA TO−92 2000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MPSA42, MPSA43 120 hFE, DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. “ON” Voltages http://onsemi.com 4 MPSA42, MPSA43 1 VCE = 2 V TA = 25°C IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODCUT (MHz) 100 10 1 0.1 1 10 10 ms 0.01 100 1.0 s 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 4. Current−Gain−Bandwidth Product Figure 5. Safe Operating Area http://onsemi.com 5 1000 MPSA42, MPSA43 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 N BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. C N SECTION X−X MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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