ON NJT4030PT1G Bipolar power transistors pnp silicon Datasheet

NJT4030P
Preferred Device
Product Preview
Bipolar Power Transistors
PNP Silicon
http://onsemi.com
Features
• Collector −Emitter Sustaining Voltage −
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
• High DC Current Gain −
hFE
•
•
•
•
•
= 200 (Min) @ IC = 1.0 Adc
= 100 (Min) @ IC = 3.0 Adc
Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc
= 0.500 Vdc (Max) @ IC = 3.0 Adc
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
These are Pb−Free Devices
C 2,4
B1
E3
Schematic
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 1
AYW
4030PG
1
A
Y
W
4030P
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
B
C
E
1
2
3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. P2
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NJT4030P/D
NJT4030P
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
40
Vdc
Collector−Base Voltage
VCB
40
Vdc
Emitter−Base Voltage
VEB
6.0
Vdc
Base Current − Continuous
IB
1.0
Adc
Collector Current − Continuous
Collector Current − Peak
IC
3.0
5.0
Adc
Total Power Dissipation
Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
PD
Collector−Emitter Voltage
Operating and Storage Junction Temperature Range
W
2.0
0.80
TJ, Tstg
– 55 to + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
− Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
− Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
Symbol
Max
RqJA
RqJA
64
155
TL
260
Unit
°C/W
°C
ORDERING INFORMATION
Package
Shipping †
NJT4030PT1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
NJT4030PT3G
SOT−223
(Pb−Free)
4000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NJT4030P
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
40
−
−
6.0
−
−
−
−
100
−
−
100
−
−
−
−
−
−
0.150
0.200
0.500
−
−
1.0
−
−
1.0
220
200
100
−
−
−
−
400
−
−
40
−
−
130
−
−
160
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
Emitter−Base Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
Collector Cutoff Current
(VCB = 40 Vdc)
ICBO
Emitter Cutoff Current
(VBE = 6.0 Vdc)
IEBO
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 5.0 mAdc)
(IC = 1.0 Adc, IB = 10 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
DC Current Gain
(IC = 0.5 Adc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
Vdc
Vdc
Vdc
−
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 5.0 Vdc, f = 1.0 MHz)
Cib
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
pF
pF
MHz
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. fT = |hFE| • ftest
PD, POWER DISSIPATION (W)
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
TJ, TEMPERATURE (°C)
Figure 1. Power Derating
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3
125
150
NJT4030P
TYPICAL CHARACTERISTICS
600
700
VCE = 4 V
150°C
500
600
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 1 V
400
25°C
300
−40°C
200
100
150°C
500
400
25°C
300
100
0
0
0.001
0.01
0.1
1
10
0.001
0.01
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
Figure 3. DC Current Gain
10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
IC/IB = 10
150°C
25°C
−40°C
0.1
0.01
0.001
IC/IB = 50
150°C
25°C
−40°C
0.1
0.01
0.001
0.01
0.1
1
10
0.001
0.01
IC, COLLECTOR CURRENT (A)
VBE(on), EMITTER−BASE VOLTAGE (V)
IC = 2 A
1A
0.5 A
0.1 A
0.01
1.0E−04 1.0E−03
1.0E−02
1
10
Figure 5. Collector−Emitter Saturation Voltage
1
0.1
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.1
IC, COLLECTOR CURRENT (A)
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
−40°C
200
1.0E−01
1.0E+00
1.2
1.1
VCE = 2 V
1.0
0.9
−40°C
0.8
0.7
0.6
25°C
0.5
0.4
0.3
0.2
0.1
0
150°C
0.001
IB, BASE CURRENT (A)
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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4
10
NJT4030P
1.2
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IC/IB = 10
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
TYPICAL CHARACTERISTICS
−40°C
25°C
150°C
0.001
0.01
0.1
1
1.1
1.0
IC/IB = 50
0.9
−40°C
0.8
0.7
0.6
25°C
0.5
0.4
0.3
150°C
0.2
0.1
0
10
0.001
0.01
Figure 8. Base−Emitter Saturation Voltage
10
Figure 9. Base−Emitter Saturation Voltage
350
100
TJ = 25°C
ftest = 1 MHz
300
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
250
200
150
100
50
TJ = 25°C
ftest = 1 MHz
80
60
40
20
0
0
0
1
2
3
4
5
0
6
160
10
15
20
25
30
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
35
10
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
IC, COLLECTOR CURRENT (A)
180
5
VEB, EMITTER BASE VOLTAGE (V)
200
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
0.1
140
120
100
80
60
40
20
0
0.5 ms
1 ms
1
10 ms
100 ms
0.1
0.01
0.001
0.01
0.1
1
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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5
100
NJT4030P
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
4
HE
1
2
3
E
b
e1
e
0.08 (0003)
C
q
A
A1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
q
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
L1
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NJT4030P/D
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