Luguang B150B Schottky barrier rectifier Datasheet

B120B-B160B
Schottky Barrier Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 1.0 A
SMB
Features
4.7± 0.25
Built-in strain relief
◇
Metal silicon junction, majority carrier conduction
◇
High surge capability
Low profile package
3.6± 0.3
◇
◇
2.0± 0.15
◇ Plastic package has Underwriters Laboratory
11 1 Flammability Classification 94V-0
◇ For surface mounted applications
5.4± 0.2
2.3± 0.15
◇ Low power loss,high effciency
◇ For use in low voltage high frequency inverters,free
11 1 wheeling and polarity protection applications
◇ Guardring for overvoltage protection
0.2± 0.05
1.3± 0.2
0.203MAX
◇ High temperature soldering guaranteed:250oC/10
11 1 seconds at terminals
Mechanical Data
◇ Case:JEDEC SMB,molded plastic over
11 11passivated chip
◇ Polarity: Color band denotes cathode end
◇ Weight: 0.003 ounces, 0.093 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
B120B
B130B
IB140B
B150B
B160B
UNITS
OOH
Maximum recurrent peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRWS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forw ord rectified current at
x TL(SEE FIG.1)
Peak forw ard surge current 8.3ms single halfx sine-w ave superimposed on rated load(JEDEC
x Method)
Maximum instantaneous forw ard voltage at
x 1.0A(NOTE.1)
Maximum DC reverse current (NOTE.1)
x @TA=25oC
at rated DC blockjing voltage
1.0
A
I FSM
30.0
A
VF
IR
Storage temperature range Operating junction
x and storage temperature range
0.5
0.7
0.5
V
mA
10.0
@TA =100oC
Typical thermal resitance (NOTE. 2)
Storage temperature range
I(AV)
RθJA
88.0
RθJL
20.0
Tj
- 55 --- +125
TSTG
- 55 --- +150
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm 2)copper pad areas
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mail:[email protected]
o
C/W
o
C
o
C
B120B-B160B
Schottky Barrier Rectifiers
Ratings AND Charactieristic Curves
AVERAGE FORWARD
CURRENT,AMPERES
1.0
FIG.2-- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT,AMPERES
FIG.1 -- FORWARD DERATING CURVE
Resistive or
inductive Load
0.5
P.C.B.MOUNTED ON
0.2X0.2(5.0X5.0mm)
COPPERPAD AREAS
0
50 60
70 80
90 100 110 120 130 140 150 160 170
50
20
10
0
O
TJ=100 C
S
O
TJ=25 C
B120-B140
B150-B160
0.2
0.4
0.6
0.8
1.0
1.2
100
1.4
100
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
TJ=125 C
10
1.6
B120B-B140B
B150B-B160B
10
0
TJ=125 C
1
0.1
0
TJ=75 C
0.01
TJ=25 0C
0.001
0
20
40
60
FIG.5--TYPICAL JUNCTION CAPACITANCE
400
0
TJ=25 C
f=1.0MHz
Vsig=50mVp-p
100
10
0.1
B120B-B140B
B150B-B160B
1
10
100
REVERSE VOLTAGE,VOLTS
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80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
JUNCTION CAPACITANCE,pF
INSTANTANEOUS FORWARD
CURRENT,AMPERES
O
0.01
0
10
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
50
0.1
1
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
1
TL=100 C
8.3ms Single Half Sine-Wave
(JEDEC Method)
30
LEAD TEMPERATURE ℃
Puise Width=300
1%DUTY CYCLE
O
40
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