isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A ICM Collector Current-peak 15 A IB Base Current 5 A PC Collector Power Dissipation @TC=25℃ 55 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W isc Website：www.iscsemi.cn BU921PFI isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU921PFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 140mA 2.5 V ICES Collector Cutoff Current VCE= 450V; VBE= 0 VCE= 450V; VBE= 0;Tj= 125℃ 0.25 0.5 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA VECF C-E Diode Forward Voltage IF= 7A 2.5 V isc Website：www.iscsemi.cn CONDITIONS B B B B MIN TYP. MAX 400 UNIT V