GE ES3C Surface mount ultrafast efficient plastic rectifier Datasheet

ES3A THRU ES3D
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
Forward Current - 3.0 Amperes
FEATURES
DO-214AB
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ For surface mount applications
♦ Low profile package
♦ Built-in strain relief
♦ Ideal for automated placement
♦ Easy pick and place
♦ Superfast recovery time for high efficiency
♦ Glass passivated chip junction
♦ High temperature soldering:
250°C/10 seconds at terminals
0.103 (2.62)
0.079 (2.06)
MECHANICAL DATA
0.060 (1.52)
0.008 (0.203)
MAX.
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
Dimensions in inches and (millimeters)
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
Device marking code
ES3A
ES3B
ES3C
ES3D
UNITS
EA
EB
EC
ED
100
150
200
Volts
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
70
105
140
Volts
VDC
50
100
150
200
Volts
Maximum DC blocking voltage
Maximum average forward rectified current at TL=100°C
I(AV)
3.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at TL=100°C
IFSM
100.0
Amps
VF
0.90
Volts
IR
10.0
500.0
µA
trr
20.0
ns
TJ=25°C
TJ=100°C
trr
30.0
50.0
ns
TJ=25°C
TJ=100°C
Qrr
15.0
35.0
nC
CJ
45.0
pF
RΘJA
RΘJL
47.0
12.0
°C/W
TJ, TSTG
-55 to +150
°C
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
Maximum stored charge
(NOTE 2)
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) trr and Qrr measured at: VR=30V, di/dt=50A/µs, IF=3.0A, and Irr=10% IR
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas
4/98
RATING AND CHARACTERISTIC CURVES ES3A THRU ES3D
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
150
RESISTIVE OR INDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
3.0
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
2.0
1.0
P.C.B. MOUNTED on
0.31 x 0.31” (8.0 x 8.0mm) COPPER PADS
0
80
90
100
110
120
130
140
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at TL=100°C
125
100
75
50
25
0
1
150
10
LEAD TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
1,000
TJ=25°C
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
100
NUMBER OF CYCLES AT 60 HZ
10
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
TJ=100°C
10
TJ=75°C
1
TJ=25°C
0.1
1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.01
0
20
40
60
80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
105
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
90
75
60
45
30
15
0
0.1
1
REVERSE VOLTAGE, VOLTS
100
100
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