FAIRCHILD KST05

KST05/06
KST05/06
Driver Transistor
• Collector-Emitter Voltage: VCEO = KST05: 60V
KST06: 80V
• Collector Power Dissipation: PC (max) = 350mW
• Complement to KST55/56
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Value
Units
: KST05
: KST06
60
80
V
V
: KST05
: KST06
60
80
V
V
Collecto-Base Voltage
Collector-Emitter Voltage
VCEO
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
350
mW
TSTG
Storage Temperature
150
°C
RTH(j-a)
Thermal Resistance junction to Ambient
357
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCEO
Parameter
* Collector-Emitter Breakdown Voltage
: KST05
: KST06
Test Condition
Max.
Units
IC=1mA, IB=0
60
80
V
V
4
V
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
ICBO
Collector Cut-off Current
VCB=60V, IE=0
VCB=80V, IE=0
: KST05
: KST06
Min.
0.1
0.1
µA
µA
0.1
µA
ICEO
Collector Cut-off Current
VCE=60V, IB=0
hFE
DC Current Gain
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=100mA, IB=10mA
0.25
V
VBE (on)
Base-Emitter On Voltage
VCE=1V, IC=100mA
1.2
V
fT
Current Gain Bandwidth Product
VCE=2V, IC=100mA, f=100MHz
50
50
100
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
Marking Code
Type
KST05
KST06
Mark
1H
1G
©2002 Fairchild Semiconductor Corporation
1H
Rev. A2, November 2002
KST05/06
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1