Panasonic DSA7003 Silicon pnp epitaxial planar type for low frequency output amplification complementary Datasheet

This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7003
Silicon PNP epitaxial planar type
For low frequency output amplification
Complementary to DSC7003
DSA8003 in MiniP3 type package
 Features
 Package
 Low collector-emitter saturation voltage VCE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Code
MiniP3-F2-B
Package dimension clicks here.→
Click!
 Packaging
DSA7003×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–60
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
–1
A
Peak collector current
ICP
–1.5
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
 Pin Name
1. Base
2. Collector
3. Emitter
 Marking Symbol: 4A
cm2
Note) *: Printed circuit board: Copper foil area of 1
or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for PC is 0.5 W
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 mA, IE = 0
–60
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 mA, IC = 0
–5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
hFE1
Forward current transfer ratio *1
*2
hFE2
– 0.1
VCE = –10 V, IC = –500 mA
120
VCE = –5 V, IC = –1 A
50
340
mA

Collector-emitter saturation voltage *1
VCE(sat)
IC = –500 mA, IB = –50 mA
– 0.4
V
Base-emitter saturation voltage *1
VBE(sat)
IC = –500 mA, IB = –50 mA
–1.2
V
fT
VCE = –10 V, IC = –50 mA
120
VCB = –10 V, IE = 0, f = 1 MHz
14.5
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
MHz
30
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
R
S
0
Rank
R
S
No-rank
hFE1
120 to 240
170 to 340
120 to 340
Marking Symbol
4AR
4AS
4A
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2012
Ver. EED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7003
−1 200
−9 mA −8 mA Ta = 25°C
−7 mA −6 mA
IB = −10 mA
−1 000
Collector current IC (mA)
1 000
750
500
250
0
−5 mA
−800
−4 mA
−3 mA
−600
−2 mA
−400
−1 mA
−200
0
40
80
120
160
0
200
Ambient temperature Ta (°C)
0
−2
−4
VCE = −10 V
−1
Ta = 85°C
−800
Ta = 85°C
−400
−102
−103
0
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0
Base-emitter voltage VBE (V)
DSA7003_fT-IC
fT  IC
250
Transition frequency fT (MHz)
−30°C
−600
−200
Collector current IC (mA)
VCE = −10 V
Ta = 25°C
150
100
50
0
−10−1
−1
50
0
−1
−10
−10
−102
Collector current IC (mA)
Ver. EED
−102
−103
Collector current IC (mA)
Cob  VCB
−30°C
200
100
DSA7003_Cob-VCB
25°C
−1 000
−10
−30°C
150
−12
−1 200
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
IC / IB = 10
−10−2
−1
25°C
200
IC  VBE
−10−1
2
−10
250
DSA7003_IC-VBE
VCE(sat)  IC
25°C
−8
VCE = −10 V
Ta = 85°C
300
Collector-emitter voltage VCE (V)
DSA7003_VCEsat-IC
−10
−6
hFE  IC
350
−1.2
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Collector power dissipation PC (mW)
IC  VCE
Forward current transfer ratio hFE
PC  Ta
1 250
DSA7003_hFE-IC
DSA7003_IC-VCE
DSA7003_PC-Ta
30
IE = 0
f = 1 MHz
Ta = 25°C
25
20
15
10
5
0
−1
−10
−100
Collector-base voltage VCB (V)
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