KST5550 KST5550 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Value 160 Units V 140 V 6 V Collector Current 600 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 160 Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 140 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V ICBO Collector Cut-off Current VCB=100V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=4V, IC=0 50 nA hFE DC Current Gain VCE=5V, IC=1.0mA VCE=5V, IC=10mA VCE=5V, IC=50mA 60 60 20 250 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA 0.15 0.25 V V VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA 1.0 1.2 V V fT Current Gain Bandwidth Product IC=10mA, VCE=10V f=100MHz 300 MHz Cob Output Capacitance VCB=10V, IE=0, f=1.0MHz 6.0 pF 100 Marking 1F ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5550 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 5V 100 10 1 1 10 100 10 IC = 10 IB 1 V BE(sat) 0.1 VCE (sat) 0.01 1 1000 IC[mA], COLLECTOR CURRENT 10 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 f = 1MHz IE = 0 Cob[pF], CAPACITANCE IC[mA], COLLECTOR CURRENT VCE = 5V 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE 10 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 Figure 4. Output Capacitance 1000 VCE = 10V 100 10 1 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5550 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1