Microsemi APTM20DAM05G Boost chopper mosfet power module Datasheet

APTM20DAM05G
VDSS = 200V
RDSon = 5mΩ typ @ Tj = 25°C
ID = 317A @ Tc = 25°C
Boost chopper
MOSFET Power Module
Application
VBUS
•
•
•
CR1
Features
Q2
•
G2
0/VBUS
•
•
•
VBUS
0/VBUS
OUT
Benefits
•
•
•
•
•
S2
G2
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
317
237
1268
±30
6
1136
89
50
2500
Unit
V
A
V
mΩ
W
A
July, 2006
S2
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM20DAM05G – Rev 3
OUT
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
APTM20DAM05G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Tj = 125°C
Min
IF
VF
Maximum Reverse Leakage Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
di/dt = 800A/µs
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mΩ
V
nA
nF
nC
99
µJ
1820
µJ
2124
Min
200
Tj = 25°C
Tj = 125°C
Tc = 85°C
ns
81
2432
IF = 240A
VR = 133V
Unit
56
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 300A, R G = 1.2Ω
IF = 240A
IF = 480A
IF = 240A
Max
µA
28
1852
VR=200V
Unit
188
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 300A, R G = 1.2Ω
DCForward Current
Diode Forward Voltage
Typ
27.4
8.72
0.38
448
Max
400
2000
6
5
±200
172
Chopper diode ratings and characteristics
IRM
5
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 300A
R G = 1.2Ω
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
Typ
3
VGS = 10V
VBus = 100V
ID = 300A
Turn-off Delay Time
Fall Time
VGS = 0V,VDS = 160V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Rise Time
Tf
T j = 25°C
VGS = 10V, ID = 158.5A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Min
VGS = 0V,VDS = 200V
Typ
Max
350
1000
Tj = 125°C
240
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
240
Tj = 125°C
1000
Unit
V
µA
A
1.15
V
July, 2006
IDSS
Characteristic
ns
nC
2–6
APTM20DAM05G – Rev 3
Symbol
APTM20DAM05G
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.11
0.23
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTM20DAM05G – Rev 3
July, 2006
SP6 Package outline (dimensions in mm)
APTM20DAM05G
Typical Performance Curve
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.9
0.1
0.7
0.08
0.06
0.5
0.04
0.3
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
VDS > ID(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
9V
800
7.5V
600
7V
400
6.5V
6V
200
ID, Drain Current (A)
600
400
T J=25°C
200
TJ =125°C
5.5V
0
0
0
5
10
15
20
25
2
VDS, Drain to Source Voltage (V)
3
4
5
6
7
8
9
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS (on) vs Drain Current
320
1.2
Normalized to
V GS=10V @ 158.5A
1.15
1.1
VGS=10V
1.05
1
VGS=20V
0.95
I D, DC Drain Current (A)
0.9
280
240
200
160
120
80
40
0
0
100
200
300
I D, Drain Current (A)
400
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25
50
75
100
125
TC, Case Temperature (°C)
150
July, 2006
RDS(on) Drain to Source ON Resistance
TJ =-55°C
4–6
APTM20DAM05G – Rev 3
I D, Drain Current (A)
VGS=15&10V
Transfert Characteristics
800
1000
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1.0
0.9
0.8
VGS=10V
ID= 158.5A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
0.7
1000
limited
by RDSon
100µs
100
1ms
10ms
Single pulse
TJ=150°C
TC=25°C
10
0.6
DC line
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ciss
Coss
10000
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
VDS=40V
I D=300A
10
TJ=25°C
VDS=100V
8
V DS =160V
6
4
2
0
0
100
200
300
400
500
Gate Charge (nC)
July, 2006
0
1
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
Maximum Safe Operating Area
10000
1.2
1.1
ON resistance vs Temperature
2.5
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5–6
APTM20DAM05G – Rev 3
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20DAM05G
APTM20DAM05G
Rise and Fall times vs Current
90
160
80
140
td(off)
70
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
60
50
40
30
100
80
tr
60
20
10
0
50
150
250
350
450
550
50
150
I D, Drain Current (A)
3
Eon
Switching Energy (mJ)
Eon and Eoff (mJ)
4
350
450
550
Switching Energy vs Gate Resistance
6
Switching Energy vs Current
VDS=133V
RG=1.2Ω
T J=125°C
L=100µH
250
ID, Drain Current (A)
5
Eoff
2
1
0
V DS=133V
ID=300A
T J=125°C
L=100µH
5.5
5
4.5
Eoff
Eon
4
3.5
3
2.5
Eoff
2
50
150
250
350
450
0
550
ID, Drain Current (A)
Operating Frequency vs Drain Current
I DR, Reverse Drain Current (A)
300
250
200
ZVS
150
V DS=133V
D=50%
R G=1.2Ω
T J=125°C
T C=75°C
100
50
0
70
5
7.5
10
12.5
15
ZCS
Hard
Switching
110 150 190 230 270
I D, Drain Current (A)
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
10
TJ =25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM20DAM05G – Rev 3
July, 2006
30
2.5
Gate Resistance (Ohms)
350
Frequency (kHz)
tf
40
td(on)
20
V DS=133V
RG=1.2Ω
T J=125°C
L=100µH
120
t r and tf (ns)
td(on) and td(off) (ns)
Delay Times vs Current
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