IRF7316TRPbF-1 VDS RDS(on) max (@VGS = -10V) -30 V 0.058 Ω 23 nC -4.9 A Qg (typical) ID (@TA = 25°C) HEXFET® Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF7316PbF-1 SO-8 Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability ⇒ Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7316TRPbF-1 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Symbol Maximum VDS V GS -30 ± 20 -4.9 -3.9 -30 -2.5 2.0 1.3 140 -2.8 0.20 -5.0 -55 to + 150 ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Units V A W mJ A mJ V/ ns °C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient 1 www.irf.com © 2014 International Rectifier Symbol Limit Units RθJA 62.5 °C/W Submit Datasheet Feedback October 16, 2014 IRF7316TRPbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 -1.0 Typ. Max. Units Conditions V V GS = 0V, ID = -250µA 0.022 V/°C Reference to 25°C, ID = -1mA 0.042 0.058 V GS = -10V, ID = -4.9A Ω 0.076 0.098 V GS = -4.5V, ID = -3.6A V V DS = V GS, ID = -250µA 7.7 S V DS = -15V, I D = -4.9A -1.0 V DS = -24V, VGS = 0V µA -25 V DS = -24V, VGS = 0V, TJ = 55°C 100 V GS = -20V nA -100 V GS = 20V 23 34 I D = -4.9A 3.8 5.7 nC V DS = -15V 5.9 8.9 V GS = -10V, See Fig. 10 13 19 V DD = -15V 13 20 I D = -1.0A ns 34 51 R G = 6.0Ω 32 48 R D = 15Ω 710 V GS = 0V 380 pF V DS = -25V 180 = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -2.5 -30 A -0.78 -1.0 44 66 42 63 V ns nC Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25°C, IS = -1.7A, VGS = 0V TJ = 25°C, IF = -1.7A di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A. ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7316TRPbF-1 IRF7316PbF-1 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 -3.0V 20μs PULSE WIDTH TJ = 25°C A 1 0.1 1 10 -3.0V 0.1 1 10 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -ISD , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) 20μs PULSE WIDTH TJ = 150°C A 1 10 -VDS, Drain-to-Source Voltage (V) TJ = 25°C TJ = 150°C 10 V DS = -10V 20μs PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 6.0 A TJ = 150°C 10 TJ = 25°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 -VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 A 1.4 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS (on) , Drain-to-Source On Resistance (Ω) IRF7316TRPbF-1 -4.9A ID =-4.9A 1.5 1.0 0.5 0.0 -60 -40 -20 -10V VGS =-10V 0 20 40 60 0.6 0.5 0.4 0.3 0.1 0 10 20 300 I D = -4.9A 0.04 0.00 3 6 9 12 -VGS , Gate -to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 15 A EAS , Single Pulse Avalanche Energy (mJ) 0.12 0 A Fig 6. Typical On-Resistance Vs. Drain Current 0.16 0.08 30 -I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature RDS (on) , Drain-to-Source On Resistance (Ω) VGS = -10V 0.0 80 100 120 140 160 TJ , Junction Temperature ( °C) 4 V GS = -4.5V 0.2 ID -1.3A -2.2A BOTTOM -2.8A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 150 IRF7316TRPbF-1 IRF7316PbF-1 VGS = 0V C, Capacitance (pF) 1200 20 f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd 1000 Ciss 800 Coss 600 400 Crss 200 0 1 ID = -4.9A SHORTED -VGS , Gate-to-Source Voltage (V) 1400 10 100 A VDS =-15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) - V DS , Drain-to-Source Voltage (V) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 P DM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 100 IRF7316TRPbF-1 SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 5 H E 1 6X 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] A INCHE S MILLIMET ERS MIN MAX MIN A .0532 .0688 1.35 1.75 MAX A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B AS IC e1 1.27 BASIC .025 B AS IC 0.635 B AS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIME NS IONING & T OL ERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MIL LIMET E R 3. DIME NS IONS ARE S HOWN IN MILL IME T E RS [INCHE S ]. 4. OUT L INE CONFORMS T O JE DEC OUT LINE MS -012AA. 5 DIME NS ION DOES NOT INCLUDE MOL D PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEE D 0.15 [.006]. 6.46 [.255] 6 DIME NS ION DOES NOT INCLUDE MOL D PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEE D 0.25 [.010]. 7 DIME NS ION IS T HE LENGT H OF LE AD FOR S OL DE RING T O A S UB S T RAT E . 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE : T HIS IS AN IRF 7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7316TRPbF-1 IRF7316PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ † Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level RoHS compliant SO-8 †† guidelines) MS L1 †† (per JEDE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Revision History Date 10/16/2014 Comments • Corrected part number from" IRF7316PbF-1" to "IRF7316TRPbF-1" -all pages • Removed the "IRF7316PbF-1" bulk part number from ordering information on page1 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014