IRF IRF8313PBF Fully characterized avalanche voltage and current Datasheet

PD - 97145
IRF8313PbF
HEXFET® Power MOSFET
Applications
l
l
VDSS
RDS(on) max
Qg
30V 15.5m:@VGS = 10V 6.0nC
Load Switch
DC/DC Conversion
Benefits
l Low Gate Charge and Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% Tested for RG
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
S2
1
8
D2
G2
2
7
D2
S1
3
6
D1
G1
4
5
D1
SO-8
Description
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Max.
Units
30
±20
V
9.7
8.1
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
ID @ TA = 70°C
c
A
81
W
0.016
-55 to + 175
W/°C
°C
Thermal Resistance
Parameter
RθJL
RθJA
Notes  through
g
Junction-to-Ambient fg
Junction-to-Drain Lead
Typ.
Max.
–––
42
–––
62.5
Units
°C/W
are on page 9
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
11/5/08
IRF8313PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.021
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
12.5
15.5
–––
18.6
21.6
V
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS(th)
Gate Threshold Voltage
1.35
1.80
2.35
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-6.0
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
23
–––
–––
Qg
IGSS
Total Gate Charge
–––
6.0
9.0
Qgs1
Pre-Vth Gate-to-Source Charge
–––
1.5
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.9
–––
Qgd
Gate-to-Drain Charge
–––
2.2
–––
Qgodr
Conditions
VGS = 0V, ID = 250μA
μA
nA
S
VGS = 10V, ID = 9.7A
VGS = 4.5V, ID = 8.0A
e
e
VDS = VGS, ID = 25μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 15V, ID = 8.0A
VDS = 15V
nC
VGS = 4.5V
ID = 8.0A
Gate Charge Overdrive
–––
1.4
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
2.9
–––
See Figs. 17a & 17b
Qoss
Output Charge
–––
3.8
–––
nC
Rg
Gate Resistance
–––
2.2
3.6
Ω
td(on)
Turn-On Delay Time
–––
8.3
–––
VDD = 15V, VGS = 4.5V
tr
Rise Time
–––
9.9
–––
td(off)
Turn-Off Delay Time
–––
8.5
–––
ID = 8.0A
RG = 1.8Ω
tf
Fall Time
–––
4.2
–––
See Fig. 15a & 15b
Ciss
Input Capacitance
–––
760
–––
VGS = 0V
Coss
Output Capacitance
–––
172
–––
Crss
Reverse Transfer Capacitance
–––
87
–––
ns
pF
VDS = 16V, VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
46
mJ
–––
8.0
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
ISM
(Body Diode)
Pulsed Source Current
–––
–––
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 8.0A, VGS = 0V
trr
Reverse Recovery Time
–––
20
30
ns
TJ = 25°C, IF = 8.0A, VDD = 15V
Qrr
Reverse Recovery Charge
–––
10
15
nC
di/dt = 100A/μs
ton
Forward Turn-On Time
2
c
3.1
A
82
A
MOSFET symbol
D
showing the
integral reverse
G
S
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF8313PbF
100
100
10
BOTTOM
TOP
1
0.1
≤60μs PULSE WIDTH
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
10
BOTTOM
1
2.3V
Tj = 25°C
≤60μs PULSE WIDTH
2.3V
0.01
0.1
10
0.1
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
Tj = 175°C
0.1
1
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TJ = 175°C
1
TJ = 25°C
0.1
VDS = 15V
≤60μs PULSE WIDTH
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1.5
1.0
0.5
0.01
1
ID = 9.8A
VGS = 10V
6
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF8313PbF
10000
16
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
ID= 8.0A
C, Capacitance (pF)
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
100
VDS = 24V
VDS = 15V
12
8
4
0
10
0.1
1
10
0
100
6
8
10
12
14
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
100
ISD , Reverse Drain Current (A)
4
Qg, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 175°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
10
TJ = 25°C
1
100μsec
1msec
10
10msec
1
TA = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
1.8
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF8313PbF
2.5
VGS(th), Gate Threshold Voltage (V)
10
ID , Drain Current (A)
8
6
4
2
0
25
50
75
100
125
150
ID = 250μA
2.0
ID = 25μA
1.5
1.0
0.5
175
-75 -50 -25
TA, Ambient Temperature (°C)
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
τJ
SINGLE PULSE
( THERMAL RESPONSE )
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
R5
R5
R6
R6
R7
R7
R8
R8
τ3
τ4
τ5
τ6
τ7
τ8
τa
τ1
τ2
τ2
τ3
τ4
τ5
τ6
τ7
τ8
Ci= τi/Ri
Ci i/Ri
Ri (°C/W)
τι (sec)
0.1396039
0.4048955
0.5273926
1.2084906
1.5779475
7.0394610
18.0102679
33.5929564
0.000010
0.000030
0.000020
0.001289
0.000340
0.009747
27.798341
0.575346
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
200
38
ID = 9.8A
34
30
26
22
18
TJ = 125°C
14
TJ = 25°C
10
2.0
4.0
6.0
8.0
10.0
EAS, Single Pulse Avalanche Energy (mJ)
RDS (on), Drain-to -Source On Resistance (mΩ)
IRF8313PbF
ID
3.0A
5.0A
BOTTOM 8.0A
TOP
160
120
80
40
0
25
VGS, Gate-to-Source Voltage (V)
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
VDS
90%
D.U.T.
+
- VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 15a. Switching Time Test Circuit
6
Fig 14b. Unclamped Inductive Waveforms
10%
VGS
td(on)
tr
td(off) tf
Fig 15b. Switching Time Waveforms
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IRF8313PbF
Driver Gate Drive
D.U.T
P.W.
+
ƒ
+
-
-
„
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
*

RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
‚
Period
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
20K
VCC
Vgs(th)
S
Qgodr
Fig 17a. Gate Charge Test Circuit
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Qgd
Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
7
IRF8313PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
6
8
7
6
5
1
2
3
4
H
E
0.25 [.010]
A
6X
e1
8X b
0.25 [.010]
A
A1
MIL L IME T E R S
MAX
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B AS IC
1.27 B AS IC
MAX
.025 B AS IC
0.635 B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
e1
e
INCH E S
MIN
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECTIFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DIS GNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8313PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.43mH, RG = 25Ω, IAS = 8.0A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF8313PbF
Standard Pack
Orderable Part number
Package Type
IRF8313PbF
SO-8
Tube/Bulk
IRF8313TRPbF
SO-8
Tape and Reel
Form
Note
Quantity
95
4000
Qualification Information†
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
Consumer ††
(per JEDEC JESD47F††† guidelines)
SO-8
MSL1
(per JEDEC J-STD-020D†††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http//www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/08
10
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