SavantIC Semiconductor Product Specification BD243/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD244/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD243 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage BD243A VALUE 45 Open emitter 60 BD243B 80 BD243C 100 BD243 45 BD243A UNIT Open base 60 BD243B 80 BD243C 100 Open collector V V 5 V IC Collector current 6 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector power dissipation 65 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD243/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 VCEO(SUS) VCEsat Collector-emitter sustaining voltage MIN TYP. MAX UNIT 45 BD243A 60 IC=30mA; IB=0 V BD243B 80 BD243C 100 Collector-emitter saturation voltage IC=6A;IB=1 A 1.5 V VBE Base-emitter on voltage IC=6A ; VCE=4V 2.0 V ICEO Collector cut-off current 0.7 mA 0.4 mA 1 mA BD243/A ICES VCE=30V; IB=0 BD243B/C VCE=60V; IB=0 BD243 VCE=45V; VBE=0 BD243A VCE=60V; VBE=0 Collector cut-off current BD243B VCE=80V; VBE=0 BD243C VCE=100V; VBE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.3A ; VCE=4V 30 hFE-2 DC current gain IC=3A ; VCE=4V 15 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD243/A/B/C