Powerex Power CM800DY-24S Powerex dual igbtmod modules are designed for use in switching applications. Datasheet

CM800DY-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
S-Series Module
800 Amperes/1200 Volts
A
B
F
E
G
H
J
D
E
M
G2
K
X
X
X
LABEL
N
G1
Q
P
C1
R
E1
F
E2
B
C2E1
E2
N
W
V NUTS
(4 PLACES)
L
T
(4 PLACES)
Description:
Powerex Dual IGBTMOD™
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors in a half-bridge
configuration with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
U NUTS
(3 PLACES)
Y
C
AA
S
Z
G2
E2
Di1
Tr2
C2E1
E2
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
C1
Tr1
Di2
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.51
140.0
P
1.57
40.0
B
5.12
130.0
Q
2.56
65.0
R
0.79
20.0
S
0.32
8.0
C
D
1.38+0.04/-0.02 35.0+1.0/-0.5
0.45
11.5
E
0.39
F
4.33±0.001
10.0
G
0.54
H
1.42
J
1.72
43.8
K
0.35
9.0
Dimensions
Millimeters
T
0.26 Dia.
6.5 Dia.
U
M8 Metric
M8
13.8
V
M4 Metric
36.0
W
0.43
11.1
X
1.02
26.0
Y
0.29
7.3
0.16
4.0
110.0±0.25
L
0.59
15.0
Z
M
0.80
20.4
AA
N
0.57
14.5
3/11 Rev. 0
Inches
M4
0.96+0.04/-0.02 24.5+1.0/-0.5
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM800DY-24S is a
1200V (VCES), 800 Ampere Dual
IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
800
24
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM800DY-24S
Units
Maximum Junction Temperature
Operating Junction Temperature
Tj(max)
+175
°C
Tj(op)
-40 ~ +150
°C
Storage Temperature
Tstg
-40 ~ +125
°C
Case Temperature*2
TC
-40 ~ +125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
790
Amperes
ICRM
1600
Amperes
Ptot
5355
Watts
IE*1
790
Amperes
IERM*1
1600
Amperes
Mounting Torque, M8 Main Terminals
–
95
in-lb
Mounting Torque, M4 Auxiliary Terminals
–
15
in-lb
Mounting Torque, M6 Mounting to Heatsink
–
40
in-lb
Creepage Distance (Terminal to Terminal)
ds
–
mm
Creepage Distance (Terminal to Baseplate)
ds
–
mm
Clearance (Terminal to Terminal)
da
–
mm
Clearance (Terminal to Baseplate)
da
–
mm
Weight
–
1200
Grams
Flatness of Baseplate (On the Centerline X, Y)*7
ec
-100 ~ +100
µm
Viso
2500
Volts
Collector Current (DC, Tc = 117°C)*2,*8
Peak Collector Current (Pulse, Repetitive)*3
Total Power Dissipation (Tc =
25°C)*2,*4
Emitter Current (FWDi Current, Tc = 25°C)*2,*4,*8
Peak Emitter Current (FWDi Current, Pulse, Repetitive)*3
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.)
– CONCAVE
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
Baseplate flatness measurement point is as in the following figure.
+ CONVEX
*1
*2
*3
*4
*6
*7
Y
X
BOTTOM
– CONCAVE
BOTTOM
LABEL SIDE
BOTTOM
+ CONVEX
*8 This module has 800A IGBT and FWDi chips. This limitation is based on a package limitation.
2
3/11 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Emitter Cutoff Current
Symbol
Test Conditions
Min.
Typ.
Max.
ICES
VCE = VCES, VGE = 0V
–
–
1
Units
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 80mA, VCE = 10V
IC = 800A, VGE = 15V, Tj = 25°C*5
IC = 800A, VGE = 15V, Tj = 125°C*5
–
1.95
2.40
Volts
–
2.25
–
Volts
IC = 800A, VGE = 15V, Tj = 150°C*5
–
2.35
–
Volts
–
1.70
2.15
Volts
(Chip)
IC = 800A, VGE = 15V, Tj = 25°C
IC = 800A, VGE = 15V, Tj = 125°C
–
1.90
–
Volts
IC = 800A, VGE = 15V, Tj = 150°C
–
–
Volts
QG
VCC = 600V, IC = 800A, VGE = 15V
–
VEC*1
IE = 800A, VGE = 0V, Tj = 25°C*5
IE = 800A, VGE = 0V, Tj = 125°C*5
–
1.85
2.30
Volts
–
1.85
–
Volts
150°C*5
(Terminal)
Collector-Emitter Saturation Voltage
Gate Charge
Emitter-Collector Voltage
VCE(sat)
(Terminal)
IE = 800A, VGE = 0V, Tj =
Emitter-Collector Voltage
1.95
1868
–
nC
–
1.85
–
Volts
VEC*1
IE = 800A, VGE = 0V, Tj = 25°C
–
1.70
2.15
Volts
(Chip)
IE = 800A, VGE = 0V, Tj = 125°C
–
1.70
–
Volts
IE = 800A, VGE = 0V, Tj = 150°C
–
1.70
–
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Turn-on Delay Time
td(on)
Rise Time
Turn-off Delay Time
Fall Time
Reverse Recovery Time
Test Conditions
VCE = 10V, VGE = 0V
Min.
Typ.
Max.
Units
–
–
80.0
nF
–
–
16.0
nF
–
–
1.32
nF
VCC = 600V, IC = 800A,
VGE = 15V,
–
–
800
ns
–
–
200
ns
td(off)
RG = 0W,
–
–
600
ns
tf
Inductive Load
–
–
300
ns
trr*1
VCC = 600V, IE = 800A, VGE = ±15V,
–
–
300
ns
42.8
tr
*1
Reverse Recovery Charge
Qrr
RG = 0W, Inductive Load
–
–
µC
Turn-on switching Energy (Per Pulse)
Eon
VCC = 600V, IC = IE = 800A,
–
107
–
mJ
Turn-off Switching Energy (Per Pulse)
Eoff
VGE = ±15V, RG = 0W,
–
82
–
mJ
Reverse Recovery Energy (Per Pulse)
Err*1
Tj = 150°C, Inductive Load
–
71
–
mJ
Main Terminals-Chip,
–
–
0.4
mW
–
2.45
–
Internal Lead resistance
RCC' + EE'
Per Switch, TC = 25°C*2
Internal Gate Resistance
rg
Per Switch
W
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
3/11 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Thermal Resistance, Junction to Case*2
Rth(j-c)Q
Per IGBT
–
–
0.028
°C/W
Case*2
Rth(j-c)R
Per FWDi
–
–
0.045
°C/W
Rth(c-s)
Case to Heatsink,Per 1/2 Module,
–
0.015
–
°C/W
Thermal Resistance, Junction to
Contact Thermal Resistance*2
Max.
Units
Thermal Grease Applied*6
Recommended Operating Conditions, Ta = 25 °C unless otherwise specified
Characteristics
DC Supply Voltage
Gate (-Emitter Drive) Voltage
External Gate Resistance
Symbol
Test Conditions
Min.
VCC
Applied Across C1-E2
–
Typ.
VGE(on)
Applied Across G1-Es1/G2-Es2
13.5
15.0
16.5
Volts
RG
Per Switch
0
–
5.1
W
600
Max.
850
Units
Volts
*2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
4
3/11 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
Tj = 25°C
13.5
VGE = 20V
15
12
1200
11
800
10
400
0
2
4
6
8
1.5
1.0
0.5
0
400
800
1200
6
IC = 800A
4
IC = 320A
2
0
1600
IC = 1600A
0
4
8
12
16
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
102
102
SWITCHING TIME, td(on), tr, td(off), tf, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
103
103
103
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
Cies
101
Coes
100
Cres
VGE = 0V
f = 1MHz
0
0.5
1.0
1.5
2.0
2.5
10-1
10-1
3.0
100
101
td(off)
tf
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
101
101
102
tr
102
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
103
td(off)
td(on)
tf
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
101
101
tr
102
COLLECTOR CURRENT, IC, (AMPERES)
3/11 Rev. 0
103
104
td(on)
td(off)
tr
tf
102
101
10-1
20
td(on)
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
SWITCHING TIME, td(on), tr, td(off), tf, (ns)
EMITTER CURRENT, IE, (AMPERES)
2.0
8
COLLECTOR-CURRENT, IC, (AMPERES)
103
SWITCHING TIME, td(on), tr, td(off), tf, (ns)
2.5
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
104
101
3.0
0
10
10
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 125°C
Inductive Load
100
101
GATE RESISTANCE, RG, (Ω)
102
SWITCHING TIME, td(on), tr, td(off), tf, (ns)
0
9
3.5
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
1600
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
td(on)
td(off)
tr
103
tf
102
101
100
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 150°C
Inductive Load
101
102
GATE RESISTANCE, RG, (Ω)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
102
100
101
101
101
102
IC = 800A
VCC = 600V
15
101
100
103
102
500 1000 1500 2000 2500 3000
GATE CHARGE, QG, (nC)
101
101
100
10-3
10-5
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) = 0.028°C/W
10-4
10-3
10-2
TIME, (s)
10-1
100
101
100
103
102
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT Part)
10-2
5
102
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
trr
Irr
EMITTER CURRENT, IE, (AMPERES)
10-1
10
103
REVERSE RECOVERY TIME, trr, (ns)
102
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
trr
Irr
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
103
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
101
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
100
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, VGE
6
101
10-1
103
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
GATE RESISTANCE, RG, (Ω)
0
Eon
Eoff
Err
GATE RESISTANCE, RG, (Ω)
Eon
Eoff
Err
0
102
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
102
20
102
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 125°C
Inductive Load
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 150°C
Inductive Load
101
10-1
101
101
103
103
101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi Part)
100
Zth = Rth • (NORMALIZED VALUE)
103
102
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Eon
Eoff
Err
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
102
103
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
Err
101
101
SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE)
SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE)
103
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY TIME, trr, (ns)
SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE)
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
10-1
10-2
10-3
10-5
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) = 0.045°C/W
10-4
10-3
10-2
10-1
100
101
TIME, (s)
3/11 Rev. 0
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