Infineon BTS442E2E3062A Smart highside power switch Datasheet

PROFET® BTS 442 E2
Smart Highside Power Switch
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
63
V
4.5 ... 42 V
18 mΩ
21
A
70
A
TO-220AB/5
5
5
1
Straight leads
Standard
1
5
SMD
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
R bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
+ V bb
3
V Logic
2
Voltage
Charge pump
sensor
Level shifter
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Limit for
unclamped
ind. loads
Logic
Load
detection
ST
Short circuit
detection
GND

PROFET
1
Signal GND
1)
2)
Load GND
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
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BTS 442 E2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
VLoad dump3)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
167
A
°C
2.1
2.0
J
kV
-0.5 ... +6
±5.0
±5.0
V
mA
≤ 0.75
≤ 75
≤ tbd
K/W
EAS
VESD
VIN
IIN
IST
63
80
Unit
V
V
W
see internal circuit diagrams page 6...
Thermal resistance
3)
4)
chip - case:
junction - ambient (free air):
SMD version, device on pcb4):
RthJC
RthJA
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
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BTS 442 E2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 5 A
Tj=25 °C: RON
--
15
18
mΩ
17
28
21
35
--
A
--
--
1
mA
ton
toff
100
10
---
350
130
µs
dV /dton
0.2
--
2
V/µs
-dV/dtoff
0.4
--
5
V/µs
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
4.5
2.4
---
---6.5
42
4.5
4.5
7.5
V
V
V
V
∆Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
--0.2
-67
12
18
6
52
----
V
V
V
V
25
60
--
µA
IL(off)
42
42
-60
63
----
IGND
--
1.1
--
mA
Tj=150 °C:
Nominal load current (pin 3 to 5)
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
Operating Parameters
Operating voltage 5)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection6)
Tj =-40°C:
Tj =25...+150°C:
Ibb=40 mA
Standby current (pin 3)
Tj=-40...+25°C:
VIN=0
Tj=150°C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)7), VIN=5 V
5)
6)
7)
IL(ISO)
IL(GNDhigh)
Ibb(off)
µA
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
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BTS 442 E2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9),
IL(SCp)
( max 400 µs if VON > VON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
Values
min
typ
max
--45
-95
--
140
---
A
30
70
--
A
80
--
400
µs
VON(CL)
--
58
--
V
VON(SC)
Tjt
∆Tjt
EAS
ELoad12
ELoad24
-150
---
8.3
-10
--
---2.1
1.7
1.2
V
°C
K
J
---
-120
32
--
V
Ω
2
2
---
1900
1500
mA
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation10),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 11)
Integrated resistor in Vbb line
Diagnostic Characteristics
Open load detection current
(on-condition)
8)
9)
Unit
-Vbb
Rbb
Tj=-40 °C: IL (OL)
Tj=25..150°C:
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Short circuit current limit for max. duration of td(SC) max=400 µs, prior to shutdown
10)
While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx.
VON(CL)
2
), see diagram page 8
EAS= 1/2 * L * IL * (
VON(CL) - Vbb
11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
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BTS 442 E2
Parameter and Conditions
Symbol
Values
min
typ
max
VIN(T+)
1.5
--
2.4
V
VIN(T-)
1.0
--
--
V
-1
0.5
--
-30
V
µA
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback12)
Input turn-on threshold voltage
Unit
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
∆ VIN(T)
IIN(off)
On state input current (pin 2), VIN = 3.5 V
IIN(on)
10
25
50
µA
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
td(ST SC)
80
200
400
µs
td(ST)
350
--
1600
µs
VST(high)
VST(low)
5.4
--
6.1
--
-0.4
V
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
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BTS 442 E2
Truth Table
Input-
Output
Status
level
level
442
D2
442
E2
Normal
operation
Open load
L
H
L
H
L
H
H
H
H
L
H
H
H
L
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
L
H
L
H
L
H
L
H
L
H
H
L
H
H (L14))
L
L
15)
L
L15)
L
L
H
L
H
H (L14))
L
L
H
H
H
H
13)
H
L
L
H
H
L
L
L
L
L
L
L = "Low" Level
H = "High" Level
Terms
Input circuit (ESD protection)
Ibb
I IN
2
V
bb
IN
V ST
IN
Vbb
IN
IL
PROFET
I ST
V
R
3
4
OUT
VON
I
ESDZDI1 ZDI2
5
I
ST
GND
GND
1
R
I
IGND
V OUT
GND
ZDI1 6.1 V typ., ESD zener diodes are not to be used
as voltage clamp at DC conditions. Operation in this
mode may result in a drift of the zener voltage
(increase of up to 1 V).
13)
Power Transistor off, high impedance
Low resistance short Vbb to output may be detected by no-load-detection
15) No current sink capability during undervoltage shutdown
14)
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BTS 442 E2
Status output
Overvolt. and reverse batt. protection
+5V
R ST(ON)
GND
+ V bb
V
ST
R IN
R bb
Z
IN
Logic
ESDZD
V
R ST ST
PROFET
GND
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Short Circuit detection
OUT
R GND
Signal GND
Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection
Open-load detection
Fault Condition: VON > 8.3 V typ.; IN high
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V bb
+ V bb
V
ON
OUT
Logic
unit
VON
ON
Short circuit
detection
OUT
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V bb
V
Z
V
GND disconnect
ON
3
OUT
GND
2
IN
VON clamped to 58 V typ.
Vbb
PROFET
4
V
bb
V
IN
V
ST
OUT
5
ST
GND
1
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
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BTS 442 E2
GND disconnect with GND pull up
3
3
2
high
2
Vbb
IN
Vbb
PROFET
PROFET
4
IN
OUT
5
4
ST
OUT
5
ST
GND
1
GND
1
V
V
V
bb
V
V
IN ST
bb
GND
Inductive Load switch-off energy
dissipation
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
E bb
Vbb disconnect with charged inductive
load
E AS
IN
3
high
2
Vbb
IN
PROFET
4
PROFET
OUT
=
5
ELoad
Vbb
ST
GND
OUT
EL
ST
GND
ER
1
V
Energy dissipated in PROFET EAS = Ebb + EL - ER.
bb
2
ELoad < EL, EL = 1/2 * L * I L
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BTS 442 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
Logic version
BTS 442D2 442E2
Overtemperature protection
Tj >150 °C, latch function16)17)
Tj >150 °C, with auto-restart on cooling
Short-circuit to GND protection
switches off when VON>8.3 V typ.16)
(when first turned on after approx. 200 µs)
D
E
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
Overvoltage shutdown with auto restart
X
X
overtemperature
X
X
short circuit to GND
X
X
-18)
-18)
open load
X
X
undervoltage
X
-
overvoltage
X
-
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
Status feedback for
short to Vbb
Status output type
CMOS
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
medium level
low level (better protection of application)
16)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
17) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
18) Low resistance short V to output may be detected by no-load-detection
bb
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BTS 442 E2
Timing diagrams
Figure 1a: Vbb turn on:
Figure 2b: Switching an inductive load
IN
IN
V
bb
t d(bb IN)
td(ST)
ST
*)
V
OUT
V
OUT
A
ST open drain
I
t
L
IL(OL)
A
t
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp,
Figure 3a: Turn on into short circuit,
IN
IN
ST
V
ST
V
OUT
OUT
td(SC)
I
I
L
L
t
t
td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ.
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BTS 442 E2
Figure 3b: Turn on into overload,
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
IN
IL
ST
I L(SCp)
IL(SCr)
V
OUT
T
ST
J
t
t
Heating up may require several milliseconds,
Vbb - VOUT < 8.3 V typ.
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
ST
ST
V
V OUT
IL
t
d(ST)
OUT
I
**)
t
L
open
t
**) current peak approx. 20 µs
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BTS 442 E2
Figure 6b: Undervoltage restart of charge pump
VON [V]
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
ST
VON(CL)
V on
off
t
d(ST OL1)
t
d(ST OL2)
V
V
off
OUT
V
V
bb(u rst)
I
normal
open
L
V
normal
V
bb(over)
bb(o rst)
bb(u cp)
bb(under)
on
t
V bb
Vbb [V]
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
charge pump starts at Vbb(ucp) =6.5 V typ.
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
V bb
Vbb
V
bb(under)
V ON(CL)
Vbb(over)
V bb(o rst)
Vbb(u cp)
V
bb(u rst)
V
OUT
V OUT
ST
ST open drain
t
Semiconductor Group
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2003-Oct-01
BTS 442 E2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 442 E2
TO-220AB/5, Option E3043 Ordering code
Ordering code
BTS 442 E2 E3043
Q67060-S6206-A2
Q67060-S6206-A3
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS442E2 E3062A T&R:
Semiconductor Group
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Q67060-S6206-A4
2003-Oct-01
BTS 442 E2
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Semiconductor Group
14
2003-Oct-01
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