KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 150 Units V 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 8 A IB Base Current 0.5 A PC Collector Dissipation (Ta=25°C) 1.5 W PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 100V, IE = 0 Min. Typ. Max. 1 hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 3A VCE = 2V, IC = 5A 2K 500 6K 15K VCE(sat) *Collector-Emitter Saturation Voltage IC = 3A, IB = 3mA 0.9 1.5 VBE(sat) *Base-Emitter SaturationVoltage IC = 3A, IB = 3mA 1.6 2 tON Turn ON Time tSTG Storage Time fT Fall Time VCC ⋅=⋅ 50V, IC = 3A IB1 = - IB2 = 3mA RL = 16.7Ω Units µA V V 1 µs 3.5 µs 1.2 µs * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification R O Y hFE1 2000 ~ 5000 3000 ~ 7000 5000 ~ 15000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD560 Typical Characteristics 10000 A .7m VCE = 2V IB = 0.5mA 3 IB = 0.4mA 2 IB = 0.35mA 1 hFE, DC CURRENT GAIN IB 4 =0 =1 IB IC[A], COLLECTOR CURRENT .0m A 5 1000 100 IB = 0.3mA 10 0.01 0 0 1 2 3 4 5 VCE [V], COLLECTOR-EMITTER VOLTAGE 1 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 PW V CE(sat) 1 10 us 1 us VBE(sat) 0 30 IC[A], COLLECTOR CURRENT 00 =1 IC = 1000 IB s 1m ms ms 3 10 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0.1 0m s 0.1 0.01 0.1 0.1 1 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 40 PC[W], POWER DISSIPATION 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD560 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E