Infineon AUIRFR120Z Automotive grade Datasheet

AUIRFR120Z
AUIRFU120Z
AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
RDS(on)
Package Type
AUIRFU120Z
I-Pak
AUIRFR120Z
D-Pak
typ.
150m
max.
190m
8.7A
ID
D
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number
100V
G
S
G
I-Pak
AUIRFU120Z
D-Pak
AUIRFR120Z
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
S
D
S
Source
Orderable Part Number
AUIRFU120Z
AUIRFR120Z
AUIRFR120ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
8.7
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
6.1
35
35
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
RJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount) 
Junction-to-Ambient
Max.
Units
A
W
0.23
± 20
18
20
See Fig.15,16, 12a, 12b
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
Typ.
Max.
Units
–––
–––
–––
4.28
50
110
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
100 ––– –––
V VGS = 0V, ID = 250µA
––– 0.084 ––– V/°C Reference to 25°C, ID = 1mA
––– 150 190 m VGS = 10V, ID = 5.2A 
2.0
–––
4.0
V VDS = VGS, ID = 250µA
16
––– –––
S VDS = 25V, ID = 5.2A
––– –––
20
VDS = 100 V, VGS = 0V
µA
––– ––– 250
VDS = 100V,VGS = 0V,TJ =125°C
––– ––– 200
VGS = 20V
nA
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
6.9
1.6
3.1
8.3
26
27
23
10
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
–––
–––
–––
310
41
24
150
26
57
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
8.7
–––
–––
35
–––
–––
–––
–––
24
23
1.3
36
35
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
Coss
Output Capacitance
Effective Output Capacitance
Coss eff.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Reverse Recovery Time
trr
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ID = 5.2A
nC VDS = 80V
VGS = 10V
VDD = 50V
ID = 5.2A
ns
RG = 53
VGS = 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 80V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V 
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 5.2A,VGS = 0V 
ns TJ = 25°C ,IF = 5.2A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 Limited by TJmax , starting TJ = 25°C, L = 1.29mH, RG = 25, IAS = 5.2A, VGS =10V. Part not recommended for use above this value.
 Pulse width 1.0ms; duty cycle  2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
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10
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
60µs PULSE WIDTH
Tj = 25°C
1
10
10
4.5V
1
60µs PULSE WIDTH
Tj = 175°C
0.1
0.01
0.1
0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
0.1
0
100
100
100
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
100.0
12
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current )
10
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
T J = 175°C
10.0
1.0
T J = 25°C
VDS = 25V
60µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
1
T J = 175°C
10
8
T J = 25°C
6
4
2
VDS = 10V
380µs PULSE WIDTH
0
0
2
4
6
8
ID, Drain-to-Source Current (A)
Fig. 4 Typical Forward Transconductance
Vs. Drain Current
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AUIRFR/U120Z
500
ID= 5.2A
VGS, Gate-to-Source Voltage (V)
400
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
300
200
100
Coss
Crss
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
4
6
8
10
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
100.0
ISD, Reverse Drain Current (A)
2
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
10.0
T J = 175°C
1.0
T J = 25°C
10
100µsec
1
VGS = 0V
0.1
0.1
0.0
0.5
1.0
VSD , Source-toDrain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
VDS= 80V
VDS= 50V
VDS= 20V
1.5
Tc = 25°C
Tj = 175°C
Single Pulse
1
1msec
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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AUIRFR/U120Z
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
10
ID , Drain Current (A)
8
6
4
2
ID = 5.2A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Thermal Response ( Z thJC )
10
D = 0.50
1
0.20
0.10
J
0.05
0.1
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
1
2
2
3
C
Ri (°C/W)
i (sec)
0.33747
0.000053
1.793
0.000125
2.150
0.000474
3
Ci= iRi
Ci= iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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15V
+
V
- DD
IAS
20V
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS, Single Pulse Avalanche Energy (mJ)
D.U.T
RG
80
DRIVER
L
VDS
ID
0.9A
1.2
BOTTOM 5.2A
TOP
60
40
20
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
5.0
Id
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
Vds
4.0
ID = 250µA
3.0
2.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming  Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
Avalanche Current (A)
0.01
0.05
1
0.10
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
20
Notes on Repetitive Avalanche Curves , Figures 15, 16:
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 5.2A
16
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
12
8
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
4
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy
Vs. Temperature
7
EAS (AR) = PD (ave)·tav
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
8
Fig 18b. Switching Time Waveforms
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AUIRFR/U120Z
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR120Z
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR/U120Z
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AUFU120Z
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR/U120Z
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR/U120Z
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D-Pak
MSL1
I-Pak
Class M1B (+/- 100V)†
AEC-Q101-002
Class H0 (+/- 100V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/12/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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