isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUS98A DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage (VBE= -1.5V) 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 60 A IB Base Current-Continuous 10 A IBM Base Current-peak 30 A PC Collector Power Dissipation @TC=25℃ 250 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUS98A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A IC= 16A; IB= 3.2A;TC= 100℃ 1.5 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 24A ;IB=5A 5.0 V Base-Emitter Saturation Voltage IC=16A; IB= 3.2A IC= 16A; IB= 3.2A;TC= 100℃ 1.6 1.6 V ICBO Collector Base Cutoff Current VCB=1000V; IE= 0 VCB=1000V; IE= 0;TC=125℃ 0.4 4 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 16A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz 700 pF VBE(sat) isc website：www.iscsemi.com CONDITIONS 2 MIN MAX UNIT 450 V 7 V 8 isc & iscsemi is registered trademark