Infineon BCR555E6327HTSA1 Pnp silicon digital transistor Datasheet

BCR555
PNP Silicon Digital Transistor
• Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ)
2
3
• Pb-free (RoHS compliant) package
1
• Qualified according AEC Q101
C
3
R1
R2
1
2
B
E
EHA07183
Type
BCR555
Marking
XDs
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
50
Collector-base voltage
VCBO
50
Input forward voltage
Vi(fwd)
20
Input reverse voltage
Vi(rev)
5
Collector current
IC
500
mA
Total power dissipation-
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
TS ≤ 79 °C
Thermal Resistance
Parameter
Symbol
RthJS
Junction - soldering point1)
-65 ... 150
Value
≤ 215
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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2011-07-28
BCR555
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
Unit
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
50
-
-
ICBO
-
-
100
nA
IEBO
-
-
0.65
mA
hFE
70
-
-
-
-
-
0.3
V
Vi(off)
0.4
-
1
Vi(on)
0.5
-
1.4
Input resistor
R1
1.5
2.2
2.9
Resistor ratio
R1/R2
0.19
0.22
0.24
-
150
-
V(BR)CBO
IC = 10 µA, IE = 0
Collector-base cutoff current
VCB = 50 V, IE = 0
Emitter-base cutoff current
VEB = 5 V, IC = 0
DC current gainIC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat
IC = 50 mA, IB = 2.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 10 mA, VCE = 0.3 V
kΩ
-
AC Characteristics
Transition frequency
fT
MHz
IC = 50 mA, VCE = 5 V, f = 100 MHz
1Pulse
test: t < 300µs; D < 2%
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2011-07-28
BCR555
DC current gain hFE = ƒ(IC)
VCE = 5 V (common emitter configuration)
Collector-emitter saturation voltage
VCEsat = ƒ(IC ), IC/IB = 20
10 3
0.55
V
0.45
hFE
VCEsat
10 2
0.4
0.35
0.3
10 1
0.25
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 0
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.2
0.15
0.1
0.05
10 -1 -4
10
10
-3
10
-2
10
-1
A
10
0 -3
10
0
10
-2
10
-1
IC
0
Input off voltage Vi(off) = ƒ(IC)
VCE = 5V (common emitter configuration)
10 1
10 2
V
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
Vi(off)
Vi(on)
10
IC
Input on Voltage Vi (on) = ƒ(IC)
VCE = 0.3V (common emitter configuration)
10 1
A
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 0
10 0
10 -1 -4
10
10
-3
10
-2
10
-1
A
10
10 -1 -5
10
0
IC
10
-4
10
-3
A
10
-2
IC
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BCR555
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
400
K/W
mW
10 2
RthJS
Ptot
300
250
10 1
200
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
150
10 0
100
50
0
0
20
40
60
80
120 °C
100
10 -1 -6
10
150
TS
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
10 4
Ptotmax/PtotDC
-
10 3
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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Package SOT23
BCR555
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
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2011-07-28
BCR555
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
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Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
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endangered.
6
2011-07-28
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