IXYS IXFT150N17T2 Trencht2 hiperfet power mosfet Datasheet

Advance Technical Information
IXFH150N17T2
IXFT150N17T2
TrenchT2TM HiperFETTM
Power MOSFET
VDSS
ID25
=
=
≤
≤
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
175V
150A
Ω
12.0mΩ
160ns
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
175
175
V
V
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
150
400
A
A
IA
EAS
TC = 25°C
TC = 25°C
75
1.0
A
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
15
V/ns
PD
TC = 25°C
880
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Md
Mounting Torque (TO-247)
Weight
TO-247
TO-268
G
Nm/lb.in.
6
4
g
g
D (Tab)
S
TO-268 (IXFT)
G
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
z
z
1.13/10
D
z
z
z
High Current Handling Capability
Fast Intrinsic Diode
Dynamaic dv/dt Rated
Avalanche Rated
Low RDS(on)
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
175
VGS(th)
VDS = VGS, ID = 1mA
2.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
z
V
4.5
V
± 200
nA
10 μA
1.5 mA
TJ = 150°C
9.7
12.0 mΩ
Applications
z
z
z
z
z
z
z
© 2010 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100229(01/10)
IXFH150N17T2
IXFT150N17T2
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 60A, Note 1
100
165
S
14.6
nF
1100
pF
136
pF
32
ns
16
ns
50
ns
20
ns
233
nC
67
nC
63
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.17 °C/W
RthJC
RthCS
TO-247 (IXFH) Outline
TO-247
°C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
150
A
ISM
Repetitive, Pulse Width Limited by TJM
600
A
VSD
IF = 100A, VGS = 0V, Note 1
1.3
V
160
ns
trr
IRM
QRM
IF = 75A, -di/dt = 100A/μs
VR = 75V, VGS = 0V
7.80
A
0.34
μC
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
3 - Source
2 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH150N17T2
IXFT150N17T2
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
350
160
VGS = 10V
8V
7V
140
120
7V
250
6V
100
ID - Amperes
ID - Amperes
VGS = 10V
8V
300
80
60
200
6V
150
100
40
5V
50
20
5V
4V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
2
3
5
6
7
8
9
10
150
175
Fig. 3. Output Characteristics @ T J = 150ºC
Fig. 4. RDS(on) Normalized to ID = 75A Value
vs. Junction Temperature
3.4
VGS = 10V
7V
140
VGS = 10V
3.0
6V
2.6
R DS(on) - Normalized
120
100
80
5V
60
40
ID = 150A
2.2
ID = 75A
1.8
1.4
1.0
20
0.6
4V
0
0.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50
-25
0
VDS - Volts
25
50
75
100
125
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 75A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
160
4.0
VGS = 10V
140
TJ = 175ºC
3.5
120
3.0
ID - Amperes
R DS(on) - Normalized
4
VDS - Volts
160
ID - Amperes
1
VDS - Volts
2.5
2.0
1.5
TJ = 25ºC
100
80
60
40
1.0
20
0
0.5
0
50
100
150
200
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
250
300
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
175
IXFH150N17T2
IXFT150N17T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
300
180
TJ = - 40ºC
250
160
TJ = 150ºC
25ºC
- 40ºC
120
25ºC
g f s - Siemens
ID - Amperes
140
100
80
60
200
150ºC
150
100
40
50
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
0
6.0
20
40
60
80
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
120
140
160
180
200
220
220
240
Fig. 10. Gate Charge
10
300
250
9
VDS = 85V
8
I G = 10mA
I D = 75A
7
VGS - Volts
200
IS - Amperes
100
ID - Amperes
150
TJ = 150ºC
100
6
5
4
3
TJ = 25ºC
2
50
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
20
40
60
80
VSD - Volts
120
140
160
180
200
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100
RDS(on) Limit
f = 1 MHz
25µs
Ciss
100
10
ID - Amperes
Capacitance - NanoFarads
100
QG - NanoCoulombs
Coss
100µs
10
1ms
1
1
10ms
TJ = 175ºC
DC
TC = 25ºC
Crss
Single Pulse
0.1
0
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
100
VDS - Volts
1,000
IXFH150N17T2
IXFT150N17T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
24
24
RG = 1Ω , VGS = 10V
23
VDS = 85V
22
21
I
D
= 150A
20
19
I
18
= 75A
D
17
TJ = 125ºC
21
t r - Nanoseconds
t r - Nanoseconds
22
RG = 1Ω , VGS = 10V
23
VDS = 85V
20
19
18
17
16
16
15
15
TJ = 25ºC
14
14
25
35
45
55
65
75
85
95
105
115
30
125
40
50
60
70
80
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
80
75
VDS = 85V
300
60
250
55
I D = 75A
200
50
150
45
100
40
50
35
0
3
4
5
6
7
8
9
VDS = 85V
26
65
60
I D = 150A, 75A
22
55
18
50
14
45
10
40
6
25
10
35
45
55
65
75
85
95
105
115
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
td(off) - - - -
75
600
70
500
55
TJ = 25ºC, 125ºC
17
50
16
45
15
50
60
70
80
90
100
110
120
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
250
130
140
40
150
400
200
300
150
I D = 150A
200
100
I D = 75A
100
50
0
0
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d(off) - Nanoseconds
60
t d(off) - Nanoseconds
65
19
40
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 85V
VDS = 85V
18
35
125
300
tf
t f - Nanoseconds
tf
RG = 1Ω, VGS = 10V
20
150
70
TJ - Degrees Centigrade
21
t f - Nanoseconds
td(off) - - - -
RG - Ohms
22
30
tf
30
30
2
140
t d(off) - Nanoseconds
65
I D = 150A
1
130
RG = 1Ω, VGS = 10V
70
350
120
75
34
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGS = 10V
400
110
38
t f - Nanoseconds
tr
100
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
500
450
90
ID - Amperes
IXFH150N17T2
IXFT150N17T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Z (th)JC - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_150N17T2(7V)1-14-10
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