Diodes DMN601DMK Dual n-channel enhancement mode field effect transistor Datasheet

DMN601DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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NEW PRODUCT
Features
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Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.015 grams (approximate)
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Drain
SOT-26
D2
G1
S1
S2
G2
D1
Body
Diode
Gate
ESD protected up to 2kV
Gate
Protection
Diode
TOP VIEW
Source
TOP VIEW
Internal Schematic
Equivalent Circuit Per Element
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Units
V
V
ID
Value
60
±20
305
800
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Symbol
Pd
RθJA
Value
225
556
Units
mW
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed (Note 3)
Drain Current (Note 1)
Thermal Characteristics
mA
@TA = 25°C unless otherwise specified
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
⎯
⎯
⎯
⎯
⎯
⎯
1
±10
V
μA
μA
VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.0
RDS (ON)
⎯
2.5
2.4
4.0
V
Static Drain-Source On-Resistance
|Yfs|
VSD
100
0.5
1.6
⎯
⎯
⎯
⎯
⎯
1.4
ms
V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 200mA
VGS = 4V, ID = 200mA
VDS =10V, ID = 200mA
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
50
25
5.0
pF
pF
pF
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
1.
2.
3.
4.
5.
Ω
Test Condition
VDS = 25V, VGS = 0V
f = 1.0MHz
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN601DMK
Document number: DS30657 Rev. 4 - 2
1 of 4
www.diodes.com
December 2007
© Diodes Incorporated
ID, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
10
VDS = 10V
ID = 1mA
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
2
Pulsed
1.5
1
0.5
0
-50
-25
25
50
75 100 125
0
Tch , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
1
0.1
150
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
10
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
NEW PRODUCT
DMN601DMK
0
1
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN601DMK
Document number: DS30657 Rev. 4 - 2
2 of 4
www.diodes.com
December 2007
© Diodes Incorporated
IDR, REVERSE DRAIN CURRENT (A)
RDS(ON), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (Ω)
0
IDR, REVERSE DRAIN CURRENT (A)
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
TCH, CHANNEL TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
1
Ordering Information
Part Number
DMN601DMK-7
Notes:
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance vs. Drain Current
(Note 6)
Case
SOT-26
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
D2
G1
S1
K7K YM
K7K YM
NEW PRODUCT
DMN601DMK
S2
Date Code Key
Year
Code
2005
S
2006
T
G2
K7K = Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
D1
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DMN601DMK
Document number: DS30657 Rev. 4 - 2
3 of 4
www.diodes.com
December 2007
© Diodes Incorporated
DMN601DMK
Package Outline Dimensions
A
NEW PRODUCT
TOP VIEW
B C
H
K
M
J
D
L
F
SOT-26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
⎯
⎯ 0.95
F
⎯
⎯ 0.55
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α
⎯
All Dimensions in mm
Suggested Pad Layout
E
Z
E
C
G
Dimensions Value (in mm)
3.20
Z
1.60
G
X
0.55
0.80
Y
C
2.40
0.95
E
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN601DMK
Document number: DS30657 Rev. 4 - 2
4 of 4
www.diodes.com
December 2007
© Diodes Incorporated
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