www.fairchildsemi.com KA5M0765RQC Fairchild Power Switch(FPS) Features Description • • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and PWM controller or RCC solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. Precision Fixed Operating Frequency (70kHz) Low Start-up Current (Typ. 100µA) Pulse by Pulse Current Limiting Over Load Protection Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode TO-220-5L 1 1. DRAIN 2. GND 3. VCC 4. FB 5. S/S Internal Block Diagram Vcc 3 + 27V Drain 1 OVP UVLO OVP-out - V REF V CC Good Logic 15V/9V 1mA 5uA INTERNAL BIAS Vref CLK VOLTAG E Sense LIMIT CIRCUIT FET OSC Feedback 4 14V S 2.5R Soft Start 5 Q + 7.5V - 5V R + LEB R VO F F S E T VS OLP TSD (TJ =150℃) OVP-out (VCC =27V) OCL (VS=1.4V) Rsense S Power-on Reset /Auto-restart R 2 GND Q Shutdown Lat ch ※ LEB : Leading Edge Blanking ※ OCL : Over Curr ent Limit Rev.1.0.5 ©2004 Fairchild Semiconductor Corporation KA5M0765RQC Absolute Maximum Ratings Parameter Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage (2) Symbol Value Unit VDGR 650 V VGS ±30 V IDM 28.0 ADC EAS 570 mJ Continuous Drain Current (TC=25°C) ID 7.0 ADC Continuous Drain Current (TC=100°C) ID 5.6 ADC VCC,MAX 30 V VFB -0.3 to VSD V PD 140 W Darting 1.11 W/°C TA -25 to +85 °C TSTG -55 to +150 °C Drain Current Pulsed Single Pulsed Avalanche Energy (3) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Ambient Temperature Storage Temperature Note: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 24mH, starting Tj = 25°C 2 KA5M0765RQC Electrical Characteristics (SFET Part) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA RDS(ON) VGS=10V, ID=3.5A - 1.25 1.6 Ω gfs VDS=50V, ID=3.5A 3.0 - - S - 1120 - Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance IDSS (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn on Delay Time td(on) Rise Time Turn Off Delay Time tr td(off) Fall Time tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=7.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.8BVDSS - 125 - - 25 - - 25 60 - 70 150 - 105 220 - 65 140 - 38 50 - 6.5 - - 18 - pF nS nC Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 2. 1S = --R 3 KA5M0765RQC Electrical Characteristics (Control Part) (Continued) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Start Threshold Voltage VSTART - 14 15 16 V Stop Threshold Voltage VSTOP After turn on 8.4 9 9.6 V FOSC Ta=25°C 61 67 73 kHz ∆F/∆T -25°C ≤ Ta ≤ +85°C - ±5 ±10 % 74 77 80 % UVLO SECTION OSCILLATOR SECTION Initial Accuracy Frequency Change With Temperature (2) Maximum Duty Cycle Dmax - Feedback Source Current IFB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA Shutdown Feedback Voltage VSD Vfb ≥ 6.5V 6.9 7.5 8.1 V 4 5 6 µA FEEDBACK SECTION Shutdown Delay Current Idelay Ta=25°C, 5V ≤ Vfb ≤ VSD SOFT START SECTION Soft Start Voltage VSS VFB =2V 4.7 5.0 5.3 V Soft Start Current ISS Sync & S/S=GND 0.8 1.0 1.2 mA Vref Ta=25°C 4.80 5.00 5.20 V - 0.3 0.6 mV/°C 4.40 5.00 5.60 A REFERENCE SECTION Output Voltage (1) Temperature Stability (1)(2) Vref/∆T -25°C ≤ Ta ≤ +85°C CURRENT LIMIT (SELF-PROTECTION) SECTION Peak Current Limit IOVER Max. inductor current PROTECTION SECTION Thermal Shutdown Temperature (Tj) (1) Over Voltage Protection TSD - 140 160 - °C VOVP - 25 27 29 V TOTAL DEVICE SECTION Start Up Current Operating Supply Current (Control Part Only) ISTART VCC=14V - 0.1 0.17 mA IOP VCC ≤ 28 - 7 12 mA Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 KA5M0765RQC Typical Performance Characteristics (SFET part) VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 150℃ ID, Drain Current [A] 1 10 0 10 25℃ 0 10 -55℃ ※ Note : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test -1 -1 0 10 1 10 2 10 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Transfer Characteristics 3.0 VGS = 10V 2.5 1 IDR, Reverse Drain Current [A] RDS(on) , [Ω] Drain-Source On-Resistance 10 VGS = 20V 2.0 1.5 1.0 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test -1 0 3 6 9 12 15 10 18 0.2 0.4 0.6 ID , Drain Current [A] 1.2 1.4 1.6 1.8 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 1500 Coss 1000 Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 500 VDS = 130V VGS, Gate-Source Voltage [V] 2000 Capacitances [pF] 1.0 Figure 4. Source-Drain Diode Forward Voltage Figure 3. On-Resistance vs. Drain Current 2500 0.8 VSD, Source-Drain voltage [V] VDS = 325V 10 VDS = 520V 8 6 4 2 ※ Note : ID = 6.5 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance vs. Drain-Source Voltage 0 5 10 15 20 25 30 35 40 45 QG, Total Gate Charge [nC] Figure 6. Gate Charge vs. Gate-Source Voltage 5 KA5M0765RQC Typical Performance Characteristics (SFET part) (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Note : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Note : 1. VGS = 10 V 2. ID = 6.0 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 8. On-Resistance vs. Temperature Figure 7. Breakdown Voltage vs. Temperature 8 2 Operation in This Area is Limited by R DS(on) 6 ID, Drain Current [A] ID, Drain Current [A] 10 100 µs 1 10 1 ms 10 ms DC 0 10 ※ Notes : 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 10 2 0 25 3 10 10 50 75 Figure 9. Max. Safe Operating Area 0 Zθ JC(t), Thermal Response D=0.5 0.2 0.1 -1 0.05 0.02 0.01 ※ Notes : 1. Zθ JC(t) = 0.9 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Thermal Response 6 125 150 Figure 10. Max. Drain Current vs. Case Temperature 10 10 100 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 0 10 1 10 KA5M0765RQC Typical Performance Characteristics (Control part) (Contiuned) (These characteristic graphs are normalized at Ta=25°C) 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 Fig.1 Operating Frequency 0 25 50 75 100 125 150 Figure 1. Operating Frequency 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 Fig.3 Operating Current 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 25 50 75 100 125 150 Fig.4 Max Inductor Current 1.1 1.05 Ipeak Iover 1 0.95 0.9 0.85 0 25 50 75 100 125 150 Fig.5 Start up Current 0.8 -25 0 25 50 75 100 125 150 Figure 4. Peak Current Limit 1.15 Fig.6 Start Threshold Voltage 1.1 1.3 1.05 1.1 Istart Vstart 1 0.9 0.95 0.7 0.5 -25 0 Figure 2. Feedback Sourece Current Figure 3. Operating Supply Current 1.5 Fig.2 Feedback Source Current 0.9 0 25 50 75 100 125 150 Figure 5. Start up Current 0.85 -25 0 25 50 75 100 125 150 Figure 6. Start Thershold Voltage 7 KA5M0765RQC Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°C) 1.15 Fig.7 Stop Threshold Voltage 1.1 1.1 1.05 1.05 Vstop 1 Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 100 125 150 0.85 -25 Figure 7. Stop Threshold Voltage Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 Fig.8 Maximum Duty Cycle 1.15 25 50 75 100 125 150 Figure 8. Maximum Duty Cycle 1.15 Fig.10 Shutdown Feedback Voltage 1.1 1.05 Vsd 1 0.95 0.9 0 25 50 75 100 125 150 Figure 9. VCC Zener Voltage 0.85 -25 0 25 50 75 100 125 150 Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 0 25 50 75 100 125 150 Figure 11. Shutdown Delay Current 8 0 0.85 -25 0 25 50 75 100 125 150 Figure 12. Over Voltage Protection KA5M0765RQC Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°C) 1.15 Fig.13 Soft Start Voltage 2.5 1.1 1.05 2 Vss 1 0.95 1.5 ( )1 Rdson 0.9 0.5 0.85 -25 0 25 50 75 100 125 150 Figure 13. Soft Start Voltage 9 Fig.14 Drain Source Turn-on Resistance 0 -25 0 25 50 75 100 125 150 Figure 14. Static Drain-Source on Resistance KA5M0765RQC Package Dimensions TO-220-5L 10 KA5M0765RQC Package Dimensions (Continued) TO-220-5L(Forming) 11 KA5M0765RQC Ordering Information Product Number KA5M0765RQCTU KA5M0765RQCYDTU Package TO-220F-5L TO-220F-5L(Forming) Rating Topr (°C) 650V, 7A -25°C to +85°C TU : Non Forming Type YDTU : Forming Type DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 8/3/04 0.0m 001 Stock#DSxxxxxxxx 2004 Fairchild Semiconductor Corporation