LL4150 150mA Surface Mount Fast Switching Diode Features · · · · Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductance C B A Mechanical Data · · · · · Case: MiniMELF(SOD-80), Glass Terminals: Solderable per MIL-STD-202, Method 208 Marking: Cathode Band Only Polarity: Cathode Band Weight: 0.05 grams (approx.) MiniMELF Dim Min Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 75 V Maximum Reverse Voltage VR 50 V IF 200 mA Maximum Average Forward Current IF(AV) 150 mA Maximum Surge Forward Current at t < 1s and Tj = 25°C IFSM 0.5 A Maximum Power Dissipation PD 500 mW Maximum Repetitive Peak Forward Current IFRM 600 mA RθJA Maximum Continuous Current 350 °C/W Maximum Junction Temperature TJ 175 °C Storage Temperature Range TS -65 to + 175 °C Thermal Resistance Junction to Ambient Air Parameter Reverse Current (1) Test Condition Symbol IR Forward Voltage VF Diode Capacitance Cd Reverse Recovery Time Trr VR = 50 V VR = 50 V , Tj = 150 °C IF = 100 mA IF = 200 mA f = 1MHz ; VR = 0 IF = 10 mA to 200 mA to IR = 10 mA to 200 mA; RL = 100 Ω ; measured at IR = 0.1x IF 1of2 Min. Typ. Max. Unit - - 0.1 100 0.92 1.0 2.5 µA µA - - 4 ns V pF FIG. 1 MAXIMUM FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 1000 Forward Current , IF (mA) AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (mA) 200 150 100 50 100 10 1 TJ = 25°C 0.1 0 0.01 0 100 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Forward Voltage , VF (V) Ambient Temperature , Ta (°C) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERSE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 10 3 10 2 Reverse Current , IR (µA) Diode Capacitance , Cd (pF) 1.0 0.9 0.8 0.7 f = 1MHz; TJ = 25°C 0.6 VR = 75V 10 1 10 -1 0.5 0.4 10 0 10 20 -2 0 Reverse Voltage , VR (V) 100 Junction Temperature, Tj (°C) 2of2 200