Central BAS56 Surface mount dual, isolated high current silicon switching diode Datasheet

BAS56
SURFACE MOUNT
DUAL, ISOLATED HIGH CURRENT
SILICON SWITCHING DIODES
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS56 consists
of two electrically isolated ultra-high speed silicon
switching diodes manufactured by the epitaxial planar
process and packaged in an epoxy molded surface
mount SOT-143 case. This device is designed for high
speed switching applications.
MARKING CODE: L51 or WL5
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
VR
60
V
VRRM
IF
60
V
200
mA
IFRM
IFSM
400
mA
4.0
A
IFSM
PD
1.0
A
350
mW
TJ, Tstg
ΘJA
-65 to +150
°C
357
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=60V
100
nA
IR
100
μA
IR
VR=60V, TA=150°C
VR=75V
10
μA
VF
IF=10mA
0.75
V
VF
IF=200mA
1.0
V
VF
IF=500mA
1.25
V
CT
VR=0, f=1.0MHz
2.5
pF
trr
IF=IR=400mA, Irr=40mA, RL=100Ω
IF=10mA, VR=5.0V, RL=500Ω
6.0
ns
50
pC
IF=400mA, tr=30ns
IF=400mA, tr=100ns
1.2
V
1.5
V
Qs
VFR
VFR
R7 (25-August 2010)
BAS56
SURFACE MOUNT
DUAL, ISOLATED HIGH CURRENT
SILICON SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) CATHODE D1
2) CATHODE D2
3) ANODE D2
4) ANODE D1
MARKING CODE: L51 or WL5
R7 (25-August 2010)
w w w. c e n t r a l s e m i . c o m
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