SUNMATE MMBD914 2.0a surface mount fast switching diode Datasheet

MMBD914
2.0A Surface Mount Fast Switching Diode
Features
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High Conductance
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Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose and Switching
Plastic Material – UL Recognition Flammability
Classification 94V-O
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A
B C
G
H
K
Mechanical Data
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J
Case: SOT-23, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
Mounting Position: Any
Marking: T1
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Characteristic
L
@TA=25°C unless otherwise specified
Value
Unit
VRM
100
V
VRRM
VRWM
VR
75
V
IO
200
mA
IFSM
2.0
A
Pd
350
mW
RJA
357
°C/W
Tj, TSTG
-65 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current (Note 1)
@ t < 1.0µs
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Characteristic
F
Symbol
Non-Repetitive Peak Reverse Voltage
Operating and Storage Temperature Range
D
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
F
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0°
8°
α
All Dimensions in mm
Maximum Ratings And Electrical Characteristics
Peak Forward Surge Current (Note 1)
M
Symbol
Min
Max
Unit
V(BR)R
75
—
V
@ IR = 100µA
Forward Voltage
VF
—
1.0
V
@ IF = 10mA
Reverse Leakage Current
IR
—
25
5.0
nA
µA
@ VR = 20V
@ VR = 75V
Junction Capacitance
Cj
—
4.0
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
trr
—
4.0
nS
IF = IR = 10mA,
IRR = 0.1 x IR, RL = 100
Reverse Breakdown Voltage
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
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Test Condition
Pd, POWER DISSIPATION (mW)
See Note 1
400
300
200
100
0
100
0
1
IF, INSTANTANEOUS FORWARD CURRENT (A)
500
0.1
TA = 150ºC
TA = 75ºC
TA = 0ºC
TA = -40ºC
0.01
0.001
200
Fig. 1 Power Derating Curve
1.0
0.5
0
TA, AMBIENT TEMPERATURE, (°C)
1.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
10000
2.0
TA = 150ºC
f = 1.0MHz
1.8
TA = 125ºC
1000
100
CT, TOTAL CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE CURRENT (nA)
TA = 25ºC
TA = 75ºC
TA = 25ºC
10
TA = 0ºC
1
TA = -40ºC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0
20
40
60
80
0.0
100
0
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance vs. Reverse Voltage
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