Comset BD679 Silicon darlington power transistor Datasheet

NPN BD675-BD677-BD679-BD681
PNP BD676-BD678-BD680-BD682
SILICON DARLINGTON POWER
TRANSISTORS
The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic
Darlington circuit for audio and video applications.
They are mounted in Jedec TO-126 plastic package.
PNP complements are BD676-BD678-BD680-BD682 .
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
PT
TJ
TStg
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
Value
BD675
BD677
BD679
BD681
BD675
BD677
BD679
BD681
IC
ICM
IBM
@ Tmb = 25°C
60
80
100
120
60
80
100
120
5
4
6
0.1
40
150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
COMSET SEMICONDUCTORS
Value
Unit
3.12
100
K/W
K/W
1
NPN BD675-BD677-BD679-BD681
PNP BD676-BD678-BD680-BD682
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
Ratings
Collector cut-off current
ICEO
Collector cut-off current
IEBO
VCE(SAT)
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
hFE
DC Current Gain
VBE
Base-Emitter Voltage(1&2)
hfe
Small signal current gain
fhfe
VF
Min Typ
Test Condition(s)
IE=0 , VCB= VCBOMAX=60 V
IE=0 , VCB= VCBOMAX=80 V
IE=0 , VCB= VCBOMAX=100 V
IE=0 , VCB= VCBOMAX=120 V
IE=0 ,VCB=½VCBOMAX= 30V,Tj=
150°C
IE=0 ,VCB=½VCBOMAX= 40V,Tj=
150°C
IE=0 ,VCB=½VCBOMAX= 50V,Tj=
150°C
IE=0 ,VCB=½VCBOMAX= 60V,Tj=
150°C
IB=0 , VCE= ½VCEOMAX=30 V
IB=0 , VCE= ½VCEOMAX=40 V
IB=0 , VCE= ½VCEOMAX=50 V
IB=0 , VCE= ½VCEOMAX=60 V
IC=0, -VEB=5 V
BD675
BD677
BD679
BD681
-
-
0,2
0,2
0,2
0,2
BD675
-
-
1
BD677
-
-
1
BD679
-
-
1
BD681
-
-
1
BD675
BD677
BD679
BD681
-
-
0,2
0,2
0,2
0,2
5
mA
-
-
2,5
V
750
-
2200
1500
-
2,5
V
10
-
-
-
60
1,5
-
kHz
V
0,8
-
-
A
-
0,3
1,5
1.5
5
µs
IC=1.5 A,-IB=6 Ma (BD675 ; IC=2 A )
VCE=3 V, IC=500 mA
VCE=3 V, IC=1,5 A
VCE=3 V, IC=4 A
VCE=3 V, IC=1,5 A (BD675 ; IC=2 A )
VCE=3 V, IC=1,5 A, f= 1 MHz (BD675 ;
IC=2 A )
VCE=3 V, IC=1,5 A (BD675 ; IC=2 A )
IF=1,5 A (BD675 ; IF=2 A )
-VCE=50 V, tP= 20ms,non rep., without
heatsink
Ut-off frequency
Diode forward voltage
Second-breakdown
I(SB)
collector current
Turn-on time
ton
-Icon= 1,5A, -Ibon= Iboff= 6mA,
Turn-off time
toff
1. Measured under pulse conditions :tP <300µs, δ <2%.
2. VBE decreases by about 3,6 mV/K with increasing temperature.
COMSET SEMICONDUCTORS
M
Unit
x
mA
2
mA
NPN BD675-BD677-BD679-BD681
PNP BD676-BD678-BD680-BD682
MECHANICAL DATA CASE TO-126
DIMENSIONS
mm
min
A
B
C
D
E
F
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
inches
max
7.4
7.8
10.5
10.8
2.4
2.7
0.7
0.9
2.2 typ.
0.49
0.75
4.4 typ.
2.54 typ.
15.7 typ.
1.2 typ.
3.8 typ.
3.0
3.2
min
max
0.295
0.307
0.413
0.425
0.094
0.106
0.027
0.035
0.087 typ.
0.019
0.029
0.173 typ.
0.100 typ.
0.618 typ.
0.047 typ.
0.149 typ.
0.118
0.126
Emitter
Collector
Base
COMSET SEMICONDUCTORS
3
COMSET SEMICONDUCTORS
4
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