FAIRCHILD FCAS20DN60BB

FCAS20DN60BB
Smart Power Module for SRM
Features
General Description
• 600V-20A 2-phase asymmetric bridge IGBT converter for
SRM drive including control ICs for gate driving and protection
FCAS20DN60BB is an advanced smart power module for SRM
drive that Fairchild has newly developed and designed to provide very compact and high performance SRM motor drives
mainly targeting low-power SRM application especially for a
vacuum air cleaner. It combines optimized circuit protection and
drive matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out and shortcircuit protection. The high speed built-in HVIC provides optocoupler-less IGBT gate driving capability that further reduce the
overall size of the system. In addition the incorporated HVIC
facilitates the use of single-supply drive topology enabling the
FCAS20DN60BB to be driven by only one drive supply voltage
without negative bias.
• Single-grounded power supply due to built-in HVIC
• Isolation rating of 1500Vrms/min.
• Embedded bootstrap diode in the package
Applications
• 2-phase SRM drives for home application vacuum cleaner.
Figure 1.
©2008 Fairchild Semiconductor Corporation
FCAS20DN60BB Rev. A
1
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FCAS20DN60BB Smart Power Module
January 2008
FCAS20DN60BB Smart Power Module
Integrated Power Functions
• 600V-20A IGBT asymmetric converter for 2-phase SRM drives (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 11.
• For low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault (Low-side supply)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
#1
#20
(1)V((2)V-)
((3)U-)
(4)U-
(5)VS(V)/V+
(6)VB(V)
(7)Vth
(9)VS(U)/U+
(8)IN(VH)
(10)VB(U)
(11)IN(UH) (13)CFOD (15)IN(VL) (17)VCC (19)N
(20)P
(12)CSC (14)VFO (16)IN(UL)(18)COM
Figure 2.
FCAS20DN60BB Rev. A
2
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Pin Number
Pin Name
1
V-
Output for V- Leg
2
( V- )
Output for V- Leg
3
( U- )
Output for U- Leg
4
U-
Output for U- Leg
5
VS(V)/V+
6
VB(V)
7
Vth
8
IN(VH)
9
VS(U)/U+
Pin Description
Output for V+ Leg / High-side Bias Voltage Ground for V-phase IGBT Gate Driving
High-side Bias Voltage for V-phase IGBT Gate Driving
Thermistor Output
Signal Input for V-phase High-side IGBT
Output for U+ Leg / High-side Bias Voltage Ground for U-phase IGBT Gate Driving
10
VB(U)
High-side Bias Voltage for U-phase IGBT Gate Driving
11
IN(UH)
Signal Input for U-phase High-side IGBT
12
CSC
Capacitor (Low-pass Filter) for Short-Current Detection
13
CFOD
Capacitor for Fault Output Duration Time Selection
14
VFO
15
IN(VL)
Signal Input for V-phase Low-side IGBT
16
IN(UL)
Signal Input for U-phase Low-side IGBT
17
VCC
Common Bias Voltage for IC and IGBTs Driving
18
COM
Common Supply Ground
19
N
Negative DC–Link Input
20
P
Positive DC–Link Input
FCAS20DN60BB Rev. A
Fault Output
3
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FCAS20DN60BB Smart Power Module
Pin Descriptions
FCAS20DN60BB Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
(10) VB(U)
(11) IN(UH)
(20) P
VCC
VB
IN(UH)
OUT
COM
VS
(9) VS(U) / U+
(6) VB(V)
(8) IN(VH)
VCC
VB
IN(VH)
OUT
COM
(5) V S(V) / V+
VS
(3) U-
(4) U(12) CSC
(13) CFOD
(14) VFO
(16) IN(UL)
(15) IN(VL)
(17) VCC
(18) COM
Csc
OUT(UL)
(1) V-
Cfod
Vfo
(2) V-
IN(UL)
IN(VL)
VCC
COM(L)
OUT(VL)
(7) V(TH)
(19) N
Figure 3.
FCAS20DN60BB Rev. A
4
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Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
VPN(Surge)
Conditions
Supply Voltage (Surge)
VCES
Rating
Units
550
V
Applied between P- N
600
V
± IC
Collector-emitter Voltage
Each IGBT Collector Current
TC = 25°C
20
A
± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, Under 1ms Pulse Width
30
A
PC
Collector Dissipation
TC = 25°C per One IGBT
22
W
TJ
Operating Junction Temperature
(Note 1)
-20 ~ 125
°C
Rating
Units
Control Part
Symbol
Parameter
Conditions
VCC
Control Supply Voltage
Applied between VCC - COM
20
V
VBS
High-side Control Bias Voltage
Applied between VB - VS
20
V
VIN
Input Signal Voltage
Applied between IN(H), IN(L) - COM
VFO
Fault Output Supply Voltage
Applied between VFO - COM
IFO
Fault Output Current
Sink Current at VFO Pin
VSC
Current Sensing Input Voltage
Applied between CSC - COM
-0.3~17
V
-0.3~VCC+0.3
V
5
mA
-0.3~VCC+0.3
V
Total System
Symbol
VPN(PROT)
Parameter
Conditions
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TSTG
Storage Temperature
VISO
Isolation Voltage
Rating
Units
400
V
VCC = VBS = 13.5 ~ 16.5V
TJ = 125°C, Non-repetitive, less than 2μs
-40 ~ 125
°C
1500
Vrms
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS
Thermal Resistance
Symbol
Rth(j-c)Q
Rth(j-c)F
Parameter
Junction to Case Thermal
Resistance
Conditions
Min.
Typ.
Max.
Units
Each IGBT under Operating Condition
-
-
4.0
°C/W
Each FWDi under Operating Condition
-
-
9.4
°C/W
Note:
1. For the measurement point of case temperature (TC), please refer to Figure 2.
Package Marking & Ordering Information
Device Marking
FCAS20DN60BB
FCAS20DN60BB Rev. A
Device
FCAS20DN60BB
Package
Reel Size
Tape Width
Quantity
SPM20-BC
_
_
11
5
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FCAS20DN60BB Smart Power Module
Absolute Maximum Ratings (TJ = 25°C,
Inverter Part
Symbol
Parameter
VCE(SAT)
Typ.
Max.
Units
VCC = VBS = 15V
VIN = 5V
IC = 15A, TJ = 25°C
-
-
2.05
V
FWDi Forward Voltage
VIN = 0V
IC = 15A, TJ = 25°C
-
-
2.8
V
Switching Times
VPN = 300V, VCC = VBS = 15V
IC = 20A
VIN = 0V ↔ 5V, Inductive Load
(Note 2)
-
680
-
ns
-
500
-
ns
-
1130
-
ns
-
160
-
ns
-
85
-
ns
-
1000
-
ns
-
1100
-
ns
-
1050
-
ns
tC(OFF)
-
180
-
ns
trr
-
80
-
ns
-
-
250
μA
tON
tC(ON)
tOFF
tC(OFF)
trr
LS
Min.
Collector-Emitter
Saturation Voltage
VFM
HS
Conditions
tON
VPN = 300V, VCC = VBS = 15V
IC = 20A
VIN = 0V ↔ 5V, Inductive Load
(Note 2)
tC(ON)
tOFF
ICES
Collector - Emitter
Leakage Current
VCE = VCES
Note:
2. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
1 0 0 % IC
trr
V CE
IC
IC
V IN
V IN
tO N
tO F F
tC (O N )
V IN (O N )
V CE
1 0 % IC
V IN (O F F )
9 0 % IC 1 0 % V C E
tC (O F F )
10% V CE
1 0 % IC
Figure 4. Switching Time Definition
FCAS20DN60BB Rev. A
6
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FCAS20DN60BB Smart Power Module
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Control Part
Symbol
Parameter
Conditions
Min.
Typ.
Max. Units
IQCC
Quiescent VCC Supply
Current
VCC = 15V
IN(L) = 0V
VCC - COM
-
-
24
mA
IQBS
Quiescent VBS Supply
Current
VBS = 15V
IN(H) = 0V
V B - VS
-
-
500
μA
VFOH
Fault Output Voltage
VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up
4.5
-
-
V
VFOL
VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up
VSC(ref)
Short Circuit Trip Level
VCC = 15V (Note 3)
UVCCD
Supply Circuit UnderVoltage Protection
Detection Level
UVCCR
Reset Level
UVBSD
Detection Level
UVBSR
Reset Level
-
-
0.8
V
0.45
0.5
0.55
V
Applied between
VCC - COM
10.7
11.9
13.0
V
11.2
12.4
13.2
V
Applied between
V B - VS
10.1
11.3
12.5
V
10.5
11.7
12.9
V
1.0
1.8
-
ms
3.0
-
-
V
tFOD
Fault-out Pulse Width
CFOD = 33nF (Note 4)
VIH
ON Threshold Voltage
Logic‘1’ input voltage
VIL
OFF Threshold Voltage
Logic‘0’ input voltage
-
-
0.8
V
RTH
Resistance of Thermistor
@ TC = 25°C (Note Fig. 9)
-
50
-
kΩ
@ TC = 80°C (Note Fig. 9)
-
6.021
-
kΩ
Applied between
IN(H), IN(L) - COM
Note:
3. Short-circuit current protection is functioning only at the low-sides.
4. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Recommended Operating Conditions
Symbol
Parameter
Conditions
Value
Min.
Typ.
Max.
Units
VPN
Supply Voltage
Applied between P - N
-
300
450
V
VCC
Control Supply Voltage
Applied between VCC - COM
13.5
15
16.5
V
VBS
High-side Bias Voltage
Applied between VB - VS
13.5
15
18.5
V
fPWM
PWM Input Signal
TC ≤ 100°C, TJ ≤ 125°C
-
3
-
kHz
VIN(ON)
Input ON Voltage
Applied between IN(H), IN(L) - COM
4 ~ 5.5
V
VIN(OFF)
Input OFF Voltage
Applied between IN(H), IN(L) - COM
0 ~ 0.65
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
Maixmum Repetitive Reveres Voltage
Conditions
IF
Forward Current
TC = 25°C
IFP
Forward Current (Peak)
TC = 25°C, Under 1ms Pulse Width
TJ
Reverse Recovery Time
FCAS20DN60BB Rev. A
7
Rating
Units
600
V
0.5
A
2
A
-20~125
°C
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FCAS20DN60BB Smart Power Module
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Parameter
Limits
Conditions
Mounting Torque
Mounting Screw - M3
Surface Flatness
Note Figure 5.
Units
Min.
Typ.
Max.
5.17
6.29
7.30
Kg•cm
0.51
0.62
0.72
N•m
-
-
-
um
-
14.5
-
g
Weight
Figure 5. Flatness Measurement Position
FCAS20DN60BB Rev. A
8
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FCAS20DN60BB Smart Power Module
Mechanical Characteristics and Ratings
FCAS20DN60BB Smart Power Module
Time Charts of Protective Function
Input Signal
Protection
Circuit State
RESET
SET
RESET
UV CCR
a1
Control
Supply Voltage
a6
UV CCD
a3
a2
a4
a7
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Fig. 6. Under-Voltage Protection (Low-side)
Input Signal
Protection
Circuit State
RESET
SET
RESET
UV BSR
Control
Supply Voltage
b1
UV BSD
b2
b5
b3
b4
b6
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR)
b6 : Normal operation: IGBT ON and carrying current
Fig. 7. Under-Voltage Protection (High-side)
FCAS20DN60BB Rev. A
9
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FCAS20DN60BB Smart Power Module
P5
In p u t S ig n a l
P6
In te r n a l IG B T
G a te -E m itte r V o lta g e
S C D e te c tio n
P1
P4
P7
O u tp u t C u r re n t
P2
S C R e fe re n c e
V o lta g e (0 .5 V )
S e n s in g V o lta g e
R C F ilte r D e la y
F a u lt O u tp u t S ig n a l
P8
P3
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO.
c6 : Input “L” : IGBT OFF state.
c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c8 : IGBT OFF state
Fig. 8. Short-Circuit Current Protection (Low-side Operation only)
Thermistor Resistance (kΩ )
100
Minimum
Typical
Maximum
10
1
0
20
40
60
80
100
120
140
Temperature [℃ ]
Fig. 9. R-T Curve of the Built-in Thermistor
FCAS20DN60BB Rev. A
10
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RPF=
4.7kΩ
SRM Module
IN(H)
CPU
IN(L)
100 Ω
VFO
CPF=
1nF
1nF
COM
Note:
5. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s
printed circuit board. The input signal section integrates 3.3kΩ(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal
voltage drop at input terminal.
6. The logic input is compatible with standard CMOS or LSTTL outputs.
Figure 10. Recommended CPU I/O Interface Circuit
This Value depend on PWM Control Algorithm
SRM module
P
15V-Line
18uF
0.1uF
Vcc
VB
IN
HO
COM VS
Output
Vcc
1000uF
1uF
IN
OUT
COM VSL
N
Note:
1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible.
Figure 11. Recommended Bootstrap Operation Circuit and Parameters
FCAS20DN60BB Rev. A
11
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FCAS20DN60BB Smart Power Module
5V-Line
(11) IN(UH)
FCAS20DN60BB Smart Power Module
(10) VB(U)
(20) P
VCC
VB
IN(UH)
OUT
COM
VS
(9) VS(U) / U+
(6) VB(V)
VCC
VB
Gating V
IN(VH)
OUT
Gating U
COM
(8) IN(VH)
M
C
U
(5) VS(V) / V+
M
VS
(3) U-
(4) U5V line
(12) CSC
(13) CFOD
(14) VFO
Fault
(16) IN(UL)
(15) IN(VL)
15V line
Temp sense
5V line
(17) VCC
(18) COM
Csc
OUT(UL)
(1) V-
Cfod
Vfo
(2) V-
IN(UL)
IN(VL)
VCC
COM(L)
OUT(VL)
(7) V(TH)
(19) N
Shunt
Resistor
2 phase SRM-SPM
Rf
Csc
Figure 12. Typical Application Circuit
FCAS20DN60BB Rev. A
12
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FCAS20DN60BB Rev. A
36.310±0.30
22.850±0.30
24.120±0.30
25.390±0.30
26.660±0.30
27.930±0.30
29.200±0.30
30.470±0.30
31.740±0.30
33.010±0.30
18.280±0.30
19.550±0.30
13.710±0.30
14.980±0.30
9.140±0.30
10.410±0.30
4.570±0.30
5.840±0.30
2-MAX1.60
NO 1
13
20-0.60±0.20
NO 20
0.50+0.10
-0.05
2-1.50±0.10
18-MAX0.95
R0
.7
0
(9.00)
(2.50)
37.00±0.50
20.00±0.30
22.20±0.30
26.50±0.30
6°
28.00±0.20
PACKAGE
CENTER
.70
R0
0.000
1.270±0.30
6°
10.50±0.10
3.30 TYP
45.00±0.20
42.00±0.10
5.50±0.20
PACKAGE
CENTER
3.60
FCAS20DN60BB Smart Power Module
Detailed Package Outline Drawings
(3.22)
3.10±0.30
5.00±0.30
18.155±0.50
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EZSWITCH™ *
™
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
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FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
®
PDP-SPM™
Power220®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
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TinyBuck™
TinyLogic®
TINYOPTO™
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* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I33
© 2008 Fairchild Semiconductor Corporation
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