TY DMG2301U P-channel enhancement mode mosfet Datasheet

Product specification
DMG2301U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = +25°C
80mΩ @ VGS = 4.5V
-2.7A
110mΩ @ VGS = 2.5V
-2.1A
V(BR)DSS
-20V
Features
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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•
Applications
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•
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Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
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Backlighting
Power Management Functions
DC-DC Converters
Motor control
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Drain
SOT23
D
Gate
Source
Top View
S
G
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
DMG2301U-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
YM
NEW PRODUCT
Description
G21
Date Code Key
Year
Code
2009
W
Month
Code
Jan
1
2010
X
Feb
2
http://www.twtysemi.com
2011
Y
Mar
3
2012
Z
Apr
4
May
5
[email protected]
G21 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
2013
A
Jun
6
2014
B
Jul
7
2015
C
Aug
8
2016
D
Sep
9
2017
E
Oct
O
4008-318-123
Nov
N
2018
F
Dec
D
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Product specification
DMG2301U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = -2.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
-20
±8
-2.7
ID
A
-2.1
-2.1
-1.7
-27
ID
Pulsed Drain Current (Note 6)
Units
V
V
IDM
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.8
157
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
±100
V
μA
nA
VGS = 0V, ID = -250μA
VDS = -16V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-0.45
⎯
V
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
|Yfs|
VSD
⎯
⎯
10
-0.75
-1.0
80
110
⎯
-1.0
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VDS = -5V, ID = -2.8A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
608
82
72
44.9
6.5
0.9
1.5
12.5
10.3
46.5
22.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
40
30
140
66
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -6V, VGS = 0V
f = 1.0MHz
VGS = 0V, VDS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -10V, ID = -3A
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 1.0Ω, ID = -1A
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature..
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
http://www.twtysemi.com
[email protected]
4008-318-123
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