AVAGO MSA-0670 Cascadable silicon bipolar mmic amplifier Datasheet

MSA-0670
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
Features
The MSA-0670 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a hermetic, high reliability package. This MMIC is
designed for use as a general purpose 50Ω gain block.
Typical applications include narrow and broad band IF
and RF amplifiers in industrial and military applications.
• Cascadable 50 Ω Gain Block
The MSA-series is fabricated using Avago’s 10 GHz
fT, 25 GHz fMAX, silicon bipolar MMIC process which
uses nitride self-alignment, ion implantation, and
gold metallization to achieve excellent performance,
uniformity and reliability. The use of an external bias
resistor for temperature and current stability also allows
bias flexibility.
70 mil Package
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 1.0 GHz
• High Gain:
19.5 dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
• Hermetic Gold-ceramic Microstrip Package
Typical Biasing Configuration
R bias
VCC > 5 V
RFC (Optional)
4
C block
IN
C block
3
1
OUT
MSA
2
Vd = 3.5 V
MSA-0670 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
50 mA
[2,3]
Power Dissipation 200 mW
RF Input Power
+13 dBm
Junction Temperature200°C
Storage Temperature
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.7 mW/°C for TC > 174°C.
4. The small spot size of this technique results in a higher, though more accurate determination
of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
GP
∆GP
f3 dB
Power Gain (|S21| 2)
VSWR
NF
P1 dB
IP3
tD
Vd
dV/dT
Min.
Typ.
Max.
f = 0.1 GHz
dB
19.020.522.0
Gain Flatness
f = 0.1 to 0.6 GHz
dB
±0.7
±1.0
3 dB Bandwidth
GHz
1.0
Input VSWR
f = 0.1 to 1.5 GHz
1.9:1
Output VSWR
f = 0.1 to 1.5 GHz
1.8:1
50 Ω Noise Figure
f = 0.5 GHz
dB2.8
4.0
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm2.0
Third Order Intercept Point
f = 0.5 GHz
dBm
14.5
Group Delay
f = 0.5 GHz
psec200
Device Voltage
V
3.1
3.5
3.9
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA.
Typical performance as a function of current is on the following page.
Units
MSA-0670 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
Freq.
GHz
Mag
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S11
Ang
.05
.07
.09
.11
.13
.15
.19
.24
.31
.38
.42
.46
.48
.48
.48
.48
S21
Mag
dB
Ang
S12
Mag
dB
–14720.5
10.62
172
–13420.4
10.41
164
–12620.1
10.16
156
–123
19.9
9.85
148
–123
19.6
9.50
141
–123
19.2
9.09
135
–126
17.4
8.28
122
–129
16.5
7.46
110
–141
15.2
5.76
87
–157
13.0
4.47
68
–167
11.1
3.59
57
178
9.52.97
45
173
7.92.49
33
164
6.62.1322
155
5.5
1.87
13
143
4.5
1.67
3
–23.3
–23.0
–22.6
–22.4
–22.0
–21.3
–20.7
–19.8
–18.2
–17.2
–16.7
–16.4
–16.2
–16.1
–15.9
–15.8
Ang
Mag
.068
4
.070
8
.074
12
.076
14
.07926
.082
18
.09322
.10322
.12423
.138
19
.14620
.152
16
.155
11
.156
9
.161
5
.163
3
.05
.09
.13
.16
.20
.22
.25
.27
.27
.24
.21
.17
.14
.11
.11
.14
S22
Ang
k
–69
–92
–104
–113
–121
–128
–141
–154
–176
166
158
156
163
–175
–154
–141
1.05
1.04
1.02
1.00
0.99
0.97
0.94
0.92
0.91
0.94
1.01
1.07
1.15
1.27
1.35
1.46
Typical Performance, TA = 25°C
(unless otherwise noted)
21
18
25
25
TC = +125C
TC = +25C
20 TC = –55C
Gain Flat to DC
0.1 GHz
0.5 GHz
20
1.0 GHz
9
15
Gp (dB)
12
Id (mA)
Gp (dB)
15
10
15
2.0 GHz
10
6
5
5
3
0
0
0.1
0.3 0.5
1.0
3.0
6.0
0
1
2
FREQUENCY (GHz)
15
20
25
30
Figure 3. Power Gain vs. Current.
4.0
Id = 30 mA
19
8
5
P1 dB (dBm)
GP
5
4
NF
4
3
P1 dB
3
2
2
1
1
+25
+85
+125
0
TEMPERATURE (C)
Figure 4. Output Power at 1 dB Gain Compression,
NF and Power Gain vs. Case Temperature, f = 0.5 GHz,
Id = 16 mA.
4
0
3.5
NF (dB)
18
NF (dB)
Gp (dB)
10
Id (mA)
12
20
17
P1 dB (dBm)
0
5
Figure 2. Device Current vs. Voltage.
21
4
Vd (V)
Figure 1. Typical Power Gain vs. Frequency,
TA = 25°C, Id = 16 mA.
0
–55 –25
3
Id = 20 mA
Id = 16 mA
3.0
2.5
Id= 12 mA
Id= 16 mA, 30 mA
Id= 20 mA
Id = 12 mA
-4
0.1
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain Compression
vs. Frequency.
2.0
0.1
0.2 0.3
0.5
1.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
2.0
4.0
Ordering Information
Part Numbers
MSA-0670
No. of Devices
100
Comments
Bulk
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.070
1.78
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2763EN
AV02-1229EN - May 15, 2008
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