www.fairchildsemi.com KA5M0965Q Fairchild Power Switch(FPS) Features Description • • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and PWM controller or RCC solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. Precision Fixed Operating Frequency (70kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Load Protection Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Latch Mode TO-3P-5L 1 1. DRAIN 2. GND 3. VCC 4. FB 5. S/S Internal Block Diagram Vcc 3 + 27V Drain 1 OVP UVLO OVP-out - V REF V CC Good Logic 15V/9V 1mA 5uA INTERNAL BIAS Vref CLK VOLTAGE Sense LIMIT CIRCUIT FET OSC Feedback 4 Soft Start 5 14V S 2.5R Q + 7.5V - 5V R + LEB R VO F F S E T VS O LP TSD (TJ =150℃) OVP-out (VCC =27V) OCL (VS=1.4V) Rsense S Power-on Reset /Auto-restart R 2 GND Q Shutdown Latch ※ LEB : Leading Edge Blanking ※ OCL : Over Current Limit Rev.1.0.3 ©2003 Fairchild Semiconductor Corporation KA5M0965Q Absolute Maximum Ratings Characteristic Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (2) Single Pulsed Avalanche Energy (3) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Ambient Temperature Storage Temperature Symbol VDGR VGS IDM EAS ID ID VCC,MAX VFB PD (watt H/S) Darting TA TSTG Note: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 20mH, VDD = 50V, RG = 27Ω, starting Tj = 25°C 2 Value 650 ±30 36.0 950 9.0 5.8 30 -0.3 to VSD 170 1.33 -25 to +85 -55 to +150 Unit V V ADC mJ ADC ADC V V W W/°C °C °C KA5M0965Q Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Characteristic Drain-Source Breakdown Voltage Symbol BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test condition VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=4.5A VDS=50V, ID=4.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.8BVDSS Min. 650 Typ. - Max. - Unit V - - 50 µA - - 200 mA 5.0 - 0.96 1200 135 25 25 75 130 1.2 60 160 270 W S - 70 150 - 45 60 - 8 22 - pF nS nC Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% 2. 1S = --R 3 KA5M0965Q Electrical Characteristics (Control Part) (Continued) (Ta = 25°C unless otherwise specified) Characteristic Symbol UVLO SECTION Start Threshold Voltage VSTART Stop Threshold Voltage VSTOP OSCILLATOR SECTION Initial Accuracy FOSC (2) Frequency Change With Temperature Maximum Duty Cycle Dmax FEEDBACK SECTION Feedback Source Current IFB Shutdown Feedback Voltage VSD Shutdown Delay Current Idelay SOFT START SECTION Soft Start Voltage VSS Soft Start Current ISS CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit IOVER PROTECTION SECTION TSD Thermal Shutdown Temperature (Tj) (1) Over Voltage Protection Voltage VOVP TOTAL DEVICE SECTION Start-up Current ISTART Operating Supply Current (Control Part Only) IOP Test condition - Unit After turn on 14 8.4 15 9 16 9.6 V V Ta=25°C -25°C ≤ Ta ≤ +85°C - 61 74 67 ±5 77 73 ±10 80 kHz % % Ta=25°C, 0V ≤ Vfb ≤ 3V Vfb ≥ 6.5V Ta=25°C, 5V ≤ Vfb ≤ VSD 0.7 6.9 4 0.9 7.5 5 1.1 8.1 6 mA V µA VFB = 2V Sync & S/S=GND 4.7 0.8 5.0 1.0 5.3 1.2 V mA Max. inductor current 5.28 6.00 6.72 A VCC ≥ 24V 140 25 160 27 29 °C V VCC=14V VCC ≤ 28 - 0.1 7 0.17 12 mA mA - Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 3. These parameters are indicated Inductor current. 4 Min. Typ. Max. KA5M0965Q Typical Performance Characteristics VGS 15 V 10 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 1 Bottom : 10 1 10 ID , Drain Current [A] ID , Drain Current [A] Top : 0 150℃ 25℃ -55℃ 0 10 ※ Note 1. VDS = 50V 2. 250µ s Pulse Test ※ Note : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 -1 -1 10 10 0 10 1 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Thansfer Characteristics IDR , Reverse Drain Current [A] RDS(on) , [Ω] Drain-Source On-Resistance 1.3 1.2 VGS = 10V 1.1 VGS = 20V 1.0 0.9 0.8 1 10 0 10 ※ Note : 1. VGS = 0V 2. 250µ s Pulse Test -1 0 2 4 6 8 10 12 14 10 16 0.0 0.2 0.4 Figure 3. On-Resistance vs. Drain Current 3000 1500 Coss 1000 1.0 1.2 1.4 1.6 12 ※ Note ; 1. V GS = 0 V 2. f = 1 MHz Crss 500 VGS, Gate-Source Voltage [V] Ciss 2000 0.8 Figure 4. Source-Drain Diode Forward Voltage C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 2500 0.6 VSD , Source-Drain Voltage [V] ID , Drain Current [A] Capacitances [pF] 25℃ 150℃ V DS = 120V 10 VDS = 300V VDS = 480V 8 6 4 2 ※ Note : ID = 8.5 A 0 -1 10 10 0 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance vs. Drain-Source Voltage 0 0 5 10 15 20 25 30 35 40 45 Q G, Total Gate Charge [nC] Figure 6. Gate Charge vs. Gate-Source Voltage 5 KA5M0965Q Typical Performance Characteristics (Continued) 3.0 1.1 1.0 ※ Note : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Note : 1. VGS = 10 V 2. ID = 6.0 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 10 10 2 Operation in This Area is Limited by R DS(on) 10 1 ID, Drain Current [A] ID, Drain Current [A] 8 10 µs 100 µs 1 ms 10 ms DC 10 0 ※ Notes : 6 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 10 -1 10 0 10 1 10 2 10 0 25 3 50 Figure 9. Max. Safe Operating Area 10 75 100 0 Zθ JC(t), Thermal Response 0 .2 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 ※ s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 N o te s : 1 . Z θ JC(t) = 0 .7 5 ℃ /W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T JM - T C = P D M * Z θ JC(t) -1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Thermal Response 6 150 Figure 10. Max. Drain Current vs. Case Temperature D = 0 .5 10 125 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 10 0 10 1 KA5M0965Q Typical Performance Characteristics (Control part) (Continued) (These characteristic graphs are normalized at Ta = 25°C) 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 Fig.1 Operating Frequency -25 0 25 50 75 100 125 150 Figure 1. Operating Frequency 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 Fig.3 Operating Current 0 25 50 75 100 125 150 Figure 2. Feedback Source Current 1.1 Fig.4 Max Inductor Current 1.05 0.95 0.9 0.85 0 25 50 75 100 125 150 Fig.5 Start up Current 0.8 -25 0 25 50 75 100 125 150 Figure 4. Peak Current Limit 1.15 Fig.6 Start Threshold Voltage 1.1 1.3 1.05 1.1 Istart Vstart 1 0.9 0.95 0.7 0.5 -25 Fig.2 Feedback Source Current Iover 1 Ipeak Figure 3. Operating Supply Current 1.5 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0.9 0 25 50 75 100 125 150 Figure 5. Start up Current 0.85 -25 0 25 50 75 100 125 150 Figure 6. Start Threshold Voltage 7 KA5M0965Q Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) 1.15 Fig.7 Stop Threshold Voltage 1.1 1.1 1.05 1.05 Vstop 1 Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 100 125 150 Figure 7. Stop Threshold Voltage Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 0.85 -25 0 25 50 75 100 125 150 Figure 8. Maximum Duty Cycle 1.15 Fig.10 Shutdown Feedback Voltage 1.1 1.05 Vsd 1 0.95 0.9 0 25 50 75 100 125 150 Figure 9. VCC Zener Voltage 0.85 -25 0 25 50 75 100 125 150 Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 0 25 50 75 100 125 150 Figure 11. Shutdown Delay Current 8 Fig.8 Maximum Duty Cycle 1.15 0.85 -25 0 25 50 75 100 125 150 Figure 12. Over Voltage Protection KA5M0965Q Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) Fig.13 Soft Start Voltage 1.15 2.5 1.1 2 1.05 Vss Fig.14 Drain Source Turn-on Resistance 1 1.5 0.95 ( )1 Rdson 0.9 0.5 0.85 -25 0 25 50 75 100 125 150 Figure13. Soft Start Voltage 0 -25 0 25 50 75 100 125 150 Figure 14. Static Drain-Source on Resistance 9 KA5M0965Q Package Dimensions TO-3P-5L 10 KA5M0965Q Package Dimensions (Continued) TO-3P-5L (Forming) 11 KA5M0965Q Ordering Information Product Number KA5M0965QTU KA5M0965QYDTU Package TO-3P-5L TO-3P-5L(Forming) Rating Operating Temperature 650V, 9A -25°C to +85°C TU : Non Forming Type YDTU : Forming Type DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 8/25/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation