NTE NTE387 Silicon npn transistor power amp, switch Datasheet

NTE387
Silicon NPN Transistor
Power Amp, Switch
Features:
D High Collector–Emitter Sustaining Voltage
D High DC Current Gain
D Low Collector–Emitter Saturation Voltage
D Fast Switching Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70°C/W
Note 1. Matched pairs are available upon request (NTE387MP). Matched pairs have their gain
specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
150
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 50mA, IB = 0, Note 2
ICEO
VCE = 75V, IB = 0
–
–
50
µA
ICEX
VCE = 180V, VEB(off) = 1.5V
–
–
10
µA
VCE = 180V, VEB(off) = 1.5V, TC = +150°C
–
–
1.0
µA
VBE = 6V, IC = 0
–
–
100
µA
IEBO
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCE = 4V, IC = 1A
50
–
–
VCE = 4V, IC = 20A
30
–
120
VCE = 4V, IC = 50A
10
–
–
IC = 20A, IB = 2A
–
–
1
V
IC = 50A, IB = 10A
–
–
3
V
IC = 20A, IB = 2A
–
–
1.8
V
IC = 50A, IB = 10A
–
–
3.5
V
VCE = 4V, IC = 20A
–
–
1.8
V
VCE = 10V, IC = 1A, ftest = 10MHz, Note 3
30
–
–
MHz
VCB = 10V, IE = 0, ftest = 0.1MHz
–
–
600
pF
ON Characteristics (Note 2)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Base–Emitter ON Voltage
VBE(on)
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
Output Capacitance
Cob
Switching Characteristics
Rise Time
tr
VCC = 80V, IC = 20A, IB1 = 2A, VBE(off) = 5V
–
–
0.35
µs
Storage Time
ts
VCC = 80V, IC = 20A, IB1 = IB2 = 2A
–
–
0.80
µs
Fall Time
tf
–
–
0.25
µs
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. fT = (hfe) test
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.215 (5.45)
.040 (1.02)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
Similar pages