FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 1.Base TO-220 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 8 A ICP * Collector Current (Pulse) 16 A IB Base Current (DC) 4 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 9 V IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1 V IC = 5A, IB = 1A 2 V IC = 8A, IB = 2A 3 V © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A 1 8 5 mA 40 30 www.fairchildsemi.com 1 FJP3307D — High Voltage Fast Switching NPN Power Transistor July 2008 VBE(sat) Parameter Base-Emitter Saturation Voltage Conditions Max Units IC = 2A, IB = 0.4A 1.2 V IC = 5A, IB = 1A 1.6 V 2.5 V VF Diode Forward Voltage IC = 3A Cob Output Capatitance VCB = 10V, IE = 0, f = 1MHz tSTG Storage Time tF Fall Time VCC = 125V, IC = 5A IB1 = -IB2 = 1A, RL = 50Ω tSTG Storage Time tF Fall Time Min. Typ. 60 pF VCC = 30V, IC = 5A, L=200μH IB1=1A, RBB = 0Ω, VBE(OFF)= -5V VCLAMP = 250V 3 μs 0.7 μs 2.3 μs 150 ns * Pulse test: PW = 300μs, Duty cycl e= 2% hFE Classification Classification H1 H2 hFE1 15 ~ 28 26 ~ 39 © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A www.fairchildsemi.com 2 FJP3307D — High Voltage Fast Switching NPN Power Transistor Symbol Figure 1. Static Characterstic Figure 2. DC Current Gain (H1 Grade) 5.0 100 VCE = 5V o IB=300mA 4.0 o TC = 125 C hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 4.5 3.5 3.0 2.5 IB=100mA 2.0 1.5 IB=50mA 1.0 o TC = - 25 C TC = 75 C o TC = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.1 10 1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. DC Current Gain (H2 Grade) Figure 4. Collector-Emitter Saturation Voltage 100 10 o TC = - 25 C TC = 75 C VCE(sat),[V] SATURATION VOLTAGE hFE, DC CURRENT GAIN TC = 125 C IC = 5 IB VCE = 5V o o o TC = 25 C 10 1 0.1 1 o TC = 125 C 1 o TC = 75 C o TC = 25 C o TC = - 25 C 0.1 0.01 0.01 10 IC [A], COLLECTOR CURRENT 1 10 Figure 6. Output Capacitance 10 1000 COB [pF], OUTPUT CAPACITANCE IC = 5 IB VBE(sat)[V], SATURATION VOLTAGE 0.1 IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage o 1 10 IC [A], COLLECTOR CURRENT TC = 25 C o TC = - 25 C o o TC = 125 C 0.1 0.01 TC = 75 C f = 1MHz, IE = 0 100 10 0.1 1 10 1 © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IC [A], COLLECTOR CURRENT www.fairchildsemi.com 3 FJP3307D — High Voltage Fast Switching NPN Power Transistor Typical Characteristics Figure 8. Reverse Biased Safe Operating Area 100 100 IC [A], COLLECTOR CURRENT PC [W}, COLLECTOR POWER DISSIPATION Figure 7. Power Derating 80 60 40 20 10 1 VCC = 50V, IB1 = - IB2 = 1A L = 1mH 0 0 25 50 75 100 125 150 175 0.1 10 200 o 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE TC [ C], CASE TEMPERATURE Figure 9. Forward Biased Safe Operating Area IC [A], COLLECTOR CURREMT 100 IC(MAX), Pulse 10μs 10 1ms IC(MAX), DC 100μs 1 0.1 o TC = 25 C Single Pulse 0.01 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A www.fairchildsemi.com 4 FJP3307D — High Voltage Fast Switching NPN Power Transistor Typical Characteristics (Continued) FJP3307D — High Voltage Fast Switching NPN Power Transistor Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A www.fairchildsemi.com 5 FJP3307D High Voltage Fast Switching NPN Power Transistor © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A www.fairchildsemi.com 6