Diodes MMST2222A-7-F Npn small signal surface mount transistor Datasheet

MMST2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMST2907A)
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
C
B C
Mechanical Data
•
•
•
•
•
•
•
•
•
SOT-323
A
B
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking Information: K3P - See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.006 grams (approximate)
E
G
H
K
M
J
D
L
C
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
α
0°
8°
All Dimensions in mm
E
B
Maximum Ratings
E
Dim
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current – Continuous (Note 1)
IC
600
mA
Power Dissipation (Note 1)
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30080 Rev. 9 - 2
1 of 4
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MMST2222A
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
75
40
6.0
⎯
⎯
⎯
Collector Cutoff Current
ICBO
⎯
10
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
ICEX
IEBO
IBL
⎯
⎯
⎯
10
10
20
V
V
V
nA
μA
nA
nA
nA
hFE
35
50
75
100
40
50
35
VCE(SAT)
⎯
VBE(SAT)
0.6
⎯
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
1.2
2.0
Cobo
Cibo
⎯
⎯
8
25
pF
pF
Current Gain-Bandwith Product
fT
300
⎯
MHz
Noise Figure
NF
⎯
4.0
dB
td
tr
ts
tf
⎯
⎯
⎯
⎯
10
25
225
60
ns
ns
ns
ns
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
⎯
V
Test Condition
IC = 10μA, IE = 0
IC = 10mA, IB = 0
IE = 10μA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
VCE = 60V, VEB(OFF) = 3.0V
VEB = 3.0V, IC = 0
VCE = 60V, VEB(OFF) = 3.0V
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
B
B
V
B
B
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
f = 1.0MHz
VCE = 10V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
VCC = 30V, IC = 150mA,
VBE(OFF) = -0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
5. Short duration pulse test used to minimize self-heating effect.
1,000
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
200
150
100
100
10
50
0
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
25
DS30080 Rev. 9 - 2
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1
0.1
1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs.Collector Current
MMST2222A
© Diodes Incorporated
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (V)
100
CAPACITANCE (pF)
30
20
10
5.0
1.0
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
1.0
10
50
VR, REVERSE VOLTS (V)
Fig. 3 Typical Capacitance Characteristics
0.1
10
100
1
IB, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
0.01
1.0
0.5
IC
IB = 10
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.8
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = -50°C
0
1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector-Emitter Saturation Voltage
vs. Collector Current
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base-Emitter Voltage vs. Collector Current
1,000
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
DS30080 Rev. 9 - 2
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MMST2222A
© Diodes Incorporated
Ordering Information
(Notes 4 & 6)
Packaging
SOT-323
Device
MMST2222A-7-F
Notes:
Shipping
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K3P
Date Code Key
Year
Code
1998
J
Month
Code
Jan
1
1999
K
2000
L
Feb
2
K3P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
2004
R
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30080 Rev. 9 - 2
4 of 4
www.diodes.com
MMST2222A
© Diodes Incorporated
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