TSC MBR10H200CT 10.0amps. schottky barrier rectifiers low power loss, high efficiency Datasheet

MBR10H100CT - MBR10H200CT
CREAT BY ART
10.0AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
—
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
—
Metal silicon junction, majority carrier conduction
—
Low power loss, high efficiency
—
High current capability, low forward voltage drop
—
High surge capability
—
For use in power supply - output rectification, power
management, instrumentation
—
Guard-ring for overvoltage protection
—
High temperature soldering guaranteed:
260℃/10 seconds,0.25", (6.35mm) from case
—
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
—
Cases: JEDEC TO-220AB molded plastic body
—
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
—
Polarity: As marked
—
Mounting position:Any
—
Mounting torque: 5 in. - lbs, max
—
Weight: 1.88 grams
Ordering Information(example)
Part No.
Package
MBR10H100CT TO-220AB
Packing
Packing code
Packing code
(Green)
D0
D0G
50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Maximum Recurrent Peak Reverse Voltage
VRRM
MBR
10H100CT
100
Maximum RMS Voltage
VRMS
70
105
140
V
Maximum DC Blocking Voltage
VDC
100
150
200
V
Maximum Average Forward Rectified Current
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
IFRM
10
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
IFSM
120
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
Parameter
Symbol
MBR
10H150CT
150
MBR
10H200CT
200
1.0
VF
Maximum Instantaneous Reverse Current at Rated
DC Blocking Voltage @ TA=25 ℃
@ TA=125 ℃
IR
5
1
dV/dt
10,000
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
V
0.5
Maximum Instantaneous Forward Voltage at (Note 2)
IF=5A, TA=25℃
IF=5A, TA=125℃
IF=10A, TA=25℃
IF=10A, TA=125℃
Voltage Rate of Change (Rated VR)
Units
0.85
0.88
0.75
0.75
0.95
0.97
0.85
0.85
A
V
uA
mA
V/us
O
RθJC
1.5
TJ
- 65 to + 175
O
C
- 65 to + 175
O
C
TSTG
Note 1: 2.0uS Pulse Width, f=1.0 KHz
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
Version:G12
C/W
RATINGS AND CHARACTERISTIC CURVES (MBR10H100CT THRU MBR10H200CT)
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.1- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
12
AVERAGE FORWARD A
CURRENT (A)
10
8
6
4
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
2
0
0
25
50
75
100
125
150
175
180
8.3mS Single Half Sine Wave
JEDEC Method
150
120
90
60
30
0
1
10
CASE TEMPERATURE (oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
10
TA=25℃
PULSE WIDTH=300uS
1% DUTY CYCLE
100
INSTANTANEOUS REVERSE A
CURRENT (mA)
INSTANTANEOUS FORWARD A
CURRENT (A)
1000
TA=125℃
10
TA=25℃
1
1
TA=125℃
0.1
TA=75℃
0.01
0.001
TA=25℃
0.0001
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
1.4
FORWARD VOLTAGE (V)
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
FIG. 5- TYPICAL JUNCTION CAPACITANCE
10000
100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
100
TA=25℃
f=1.0MHz
Vsig=50mVp-p
1000
100
0.1
1
10
REVERSE VOLTAGE (V)
100
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION (sec)
Version:G12
Ordering information
Part No.
Package
BULK Packing
MBR10HxxCT
50 / TUBE
TO-220AB
Note: "xx" is Device Code from "100" thru "200".
Packing code
Packing code
(Green)
C0
C0G
Dimensions
DIM.
Marking Diagram
P/N
= Specific Device Code
G
= Green Compound
YWW
= Date Code
Unit(mm)
Unit(inch)
Min
Max
Min
Max
A
-
10.50
-
0.413
B
2.62
3.44
0.103
0.135
C
2.80
4.20
0.110
0.165
D
0.68
0.94
0.027
0.037
E
3.54
4.00
0.139
0.157
F
14.60
16.00
0.575
0.630
G
13.19
14.79
0.519
0.582
H
I
2.41
4.42
2.67
4.76
0.095
0.174
0.105
0.187
J
1.14
1.40
0.045
0.055
K
5.84
6.86
0.230
0.270
L
2.20
2.80
0.087
0.110
M
0.35
0.64
0.014
0.025
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