ETL MV409 Silicon tuning diode Datasheet

Silicon Tuning Diode
MMBV409LT1
MV409
This device is designed in the surface Mount package for general frequency
control and tuning applications.It provides solid-state reliability in replacement of
mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
ANODE
3
CATHODE
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VR
IF
PD
M B V 4 0 9 MMBV409LT1 Unit
20
20
Vdc
200
200
mAdc
280
225
mW
2.8
1.8
mW/°C
+125
°C
–55 to +150
°C
TJ
T stg
DEVICE MARKING
MMBV409LT1=X5,MV409=MV409
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR=10µAdc)
Reverse Voltage Leakage Current
(V R=15Vdc)
Diode Capacitance Temperature Coefficient
Device Type
Symbol
Min
Typ
Max
Unit
V (BR)R
20
—
—
Vdc
—
—
0.1
µAdc
—
300
—
ppm/°C
I
R
T CC
C T Diode Capacitance
V R =3.0Vdc,f=1.0MHz
pF
MMBV409LT1,MV409
Q,Figure of Merit C R ,Capacitance Ratio
C 3/ C 8
V R =3.0Vdc
f=1.0MHz(1)
f=50MHz
Min
Nom
Max
Min
Min
Max
26
29
32
200
1.5
1.9
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 vdc
I2–1/2
MMBV409LT1 MV409
TYPICAL CHARACTERISTICS
1000
C T , DIODE CAPACITANCE (pF)
40
Q , FIGURE OF MERIT
32
f = 1.0MHz
TA = 25°C
24
16
8
2
3
10
20
30
100
1000
V R , REVERSE VOLTAGE (VOLTS)
f , FREQUENCY ( MHz )
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
100
60
20
10
6.0
V R= 15Vdc
2.0
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
0.002
0.001
–60
10
100
CT,DIODECAPACITANCE(NORMALIZED)
, REVERSE CURRENT ( nA )
1
R
100
10
0
I
V R =3Vdc
T A = 25°C
–40
–20
0
+20
+40
+60
+80
+100 +120 +140
1.04
V R= 3.0Vdc
f = 1.0MHz
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75
–50
–25
0
+25
+50
+75
+100
T A , AMBIENT TEMPERATURE (°C)
T A , AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
+125
I2–2/2
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