Renesas HAT2131R Silicon n channel power mos fet power switching Datasheet

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HAT2131R
Silicon N Channel Power MOS FET
Power Switching
REJ03G1815-0100
Rev.1.00
Jul 17, 2009
Features
•
•
•
•
Low on-resistance
Low drive current
High density mounting
Capable of 4 V gate drive
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
5 6 7 8
D D D D
65
87
4
G
3
12
1, 2, 3
4
5, 6, 7, 8
4
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
Pch Note2
Tch
Tstg
Ratings
350
±20
0.9
7.2
0.9
7.2
2.5
150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 1 of 6
Unit
V
V
A
A
A
A
W
°C
°C
HAT2131R
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Min
350
—
—
1.0
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.0
2.5
2.6
460
32
8
15
13
76
50
20
1
6
Max
—
0.1
±0.1
2.5
—
3.0
3.2
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDF
trr
—
—
0.8
220
1.2
—
V
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 3. Pulse test
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 2 of 6
Test conditions
ID = 10 mA, VGS = 0
VDS = 350 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 0.45 A, VDS = 10 V Note3
ID = 0.45 A, VGS = 10 V Note3
ID = 0.45 A, VGS = 4 V Note3
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 0.45 A
VGS = 10 V
RL = 556 Ω
Rg = 10 Ω
VDD = 250 V
VGS = 10 V
ID = 0.9 A
IF = 0.9 A, VGS = 0 Note3
IF = 0.9 A, VGS = 0
diF/dt = 100 A/µs
HAT2131R
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
5
10 µs
10
ID (A)
ID (A)
100
PW = 100 µs
0.1
Operation in this
area is limited by
RDS(on)
0.01
Ta = 25°C
0.001 1 shot
0.1
1
10
100
0
Drain to Source on State Resistance
RDS(on) (Ω)
2
1
25°C
Tc = 75°C
−25°C
0
2
3
4
Gate to Source Voltage
5
VGS = 10 V
Pulse Test
8
ID = 0.9 A
0.45 A
4
0.1 A
2
25
50
75
Case Temperature
100
125 150
Tc (°C)
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 3 of 6
8
12
16
20
VDS (V)
10
Ta = 25°C
Pulse Test
VGS = 4 V
3
10 V
1
0.1
1
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical) (1)
6
4
Drain to Source Voltage
10
Drain Current
Static Drain to Source on State Resistance
RDS(on) (Ω)
ID (A)
Drain Current
3
0
2.4 V
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
4
0
−25
1
VDS (V)
VDS = 10 V
Pulse Test
1
2.6 V
1000
5
0
2
VGS = 2.2 V
Typical Transfer Characteristics
Static Drain to Source on State Resistance
RDS(on) (Ω)
2.8 V
0
Drain to Source Voltage
10
3V
4V
10 V
4
3
Drain Current
Drain Current
1
Ta = 25°C
Pulse Test
ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical) (2)
10
VGS = 4 V
Pulse Test
8
ID = 0.9 A
6
0.45 A
4
0.1 A
2
0
−25
0
25
50
75
Case Temperature
100
125 150
Tc (°C)
HAT2131R
Body-Drain Diode Reverse
Recovery Time (Typical)
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
100
VGS = 0
f = 1 MHz
Ta = 25°C
1000
Ciss
100
Coss
10
Crss
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1
10
1
0
10
Reverse Drain Current IDR (A)
VDS = 100 V
250 V
400
VDS
200
4
VDS = 250 V
100 V
0
0
8
16
24
Gate Charge
Gate to Source Cutoff Voltage VGS(off) (V)
8
32
0
40
Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
2.5
VDS = 10 V
2.0
1.5
ID = 10 mA
1.0
1 mA
0.1 mA
0.5
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 4 of 6
5
Reverse Drain Current IDR (A)
12
VGS (V)
VGS
600
120
160
200
VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
16
ID = 0.9 A
Ta = 25°C
80
Drain to Source Voltage
Dynamic Input Characteristics (Typical)
800
40
VGS = 0 V
Ta = 25 °C
Pulse Test
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD (V)
HAT2131R
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
D=
PDM
0.001
1s
0.0001
10 µ
t
ho
pu
lse
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
10 Ω
Switching Time Waveform
D.U.T.
Vin
Vout
Vin
10 V
10%
RL
VDD
= 250 V
10%
90%
td(on)
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 5 of 6
10%
tr
90%
td(off)
tf
HAT2131R
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
*3
Terminal cross section
(Ni/Pd/Au plating)
bp
x M
e
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol
Min
D
E
A2
A1
A
bp
b1
c
c1
1
A
L1
L
y
HE
e
x
y
Z
L
L1
Detail F
Ordering Information
Part No.
HAT2131R-EL-E
Quantity
2500 pcs
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 6 of 6
Shipping Container
Taping
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
0°
8°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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