RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 50 Amperes C3 3.9 ± 0.2 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation 13.5 ± 0.3 * * * * * * * * 20 ± 0.3 FEATURES : MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 2.0 ± 0.2 7.5 7.5 ±0.2 ±0.2 ±0.2 10 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage VRRM RBV 5000 50 Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55°C IF(AV) 50 Amps. IFSM 400 Amps. Current Squared Time at t < 8.3 ms. 2 It 660 A2S Maximum Forward Voltage per Diode at IF = 25 Amps. VF 1.1 Volts RATING SYMBOL RBV 5001 100 RBV 5002 200 RBV 5004 400 RBV 5006 600 RBV 5008 800 RBV 5010 1000 Volts UNIT Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA R θJC 1.5 °C/W TJ 10 °C TSTG - 40 to + 150 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case w ith units mounted on heatsink. UPDATE : AUGUST 3, 1998 FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 ) 60 50 40 30 20 10 P.C. Board Mounted with SINE WAVE R-Load 0 0 25 50 75 100 125 150 600 500 TJ = 50 °C 400 300 200 100 0 175 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 10 REVERSE CURRENT, MICROAMPERES 100 FORWARD CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 TJ = 100 °C 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.01 0.1 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 140