RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes RBV25 3.9 ± 0.2 30 ± 0.3 C3 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation ∼ ∼ + 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 10 7.5 7.5 ±0.2 ±0.2 ±0.2 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 ∅3.2 ± 0.1 13.5 ± 0.3 * * * * * * * * 4.9 ± 0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage VRRM RBV 600D 50 Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55°C IF(AV) 6.0 Amps. IFSM 300 Amps. Current Squared Time at t < 8.3 ms. 2 It 127 A2S Maximum Forward Voltage per Diode at IF = 6.0 Amps. VF 1.0 Volts IR 10 µA IR(H) 200 µA RθJC 2.2 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C RATING SYMBOL RBV 601D 100 RBV 602D 200 RBV 604D 400 RBV 606D 600 RBV 608D 800 RBV 610D 1000 UNIT Volts Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case w ith units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink. UPDATE : AUGUST 3, 1998 RATING AND CHARACTERISTIC CURVES ( RBV600D - RBV610D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 240 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 6.0 5.0 4.0 3.0 2.0 1.0 0 HEAT-SINK MOUNTING, Tc 2.6" x 1.4" x 0.06" THK. (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 0 25 50 75 100 125 150 200 120 80 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 40 0 175 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 10 100 T J = 100 °C REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES T J = 50 °C 160 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 1.0 0.1 T J = 25 °C T J = 25 °C 0.1 0.01 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 140