RBV800 - RBV810 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 8.0 Amperes RBV25 3.9 ± 0.2 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation 4.9 ± 0.2 ∼ ∼ + MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 ∅3.2 ± 0.1 13.5 ± 0.3 * * * * * * * * 30 ± 0.3 C3 1.0 ± 0.1 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage VRRM RBV 800 50 Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55°C I F(AV) 8.0 Amps. I FSM 300 Amps. Current Squared Time at t < 8.3 ms. 2 It 160 A S Maximum Forward Voltage per Diode at IF = 4.0 Amps. VF 1.0 Volts RATING SYMBOL RBV 801 100 RBV 802 200 RBV 804 400 RBV 806 600 RBV 808 800 RBV 810 1000 UNIT Volts Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range 2 IR 10 µA I R(H) 200 µA RθJC 2.5 °C/W TJ - 40 to + 150 °C T STG - 40 to + 150 °C Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink. UPDATE : AUGUST 3, 1998 FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 9.0 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES RATING AND CHARACTERISTIC CURVES ( RBV800 - RBV810 ) HEAT-SINK MOUNTING, 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.-PLATE 7.5 Tc = 50°C 6.0 4.5 3.0 1.5 0 0 25 50 75 100 125 150 250 TJ = 50 °C 200 150 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 50 0 175 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 100 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES TJ = 100 °C 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 1.0 TJ = 25 ° 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 140