SPANSION MBM29DL32TF70TN Flash memory cmos 32 m (4 m x 8/2 m x 16) bit dual operation Datasheet

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20904-3E
FLASH MEMORY
CMOS
32 M (4 M × 8/2 M × 16) BIT Dual Operation
MBM29DL32TF/BF-70
■ DESCRIPTION
The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M
words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be
reprogrammed in standard EPROM programmers.
(Continued)
■ PRODUCT LINE UP
MBM29DL32TF/BF
Part No.
70
VCC = 3.0 V
Power Supply Voltage (V)
Max Access Time (ns)
70
Max CE Access Time (ns)
70
Max OE Access Time (ns)
30
+0.6 V
−0.3 V
■ PACKAGES
48-pin plastic TSOP (1)
48-ball plastic FBGA
Marking side
(FPT-48P-M19)
(BGA-48P-M12)
MBM29DL32TF/BF-70
)
(Continued)
MBM29DL32TF/BF are organized into four physical banks; Bank A, Bank B, Bank C and Bank D, which are
considered to be four separate memory arrays operations. It is the Fujitsu’s standard 3.0 V only Flash memories,
with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array
while an embedded write (either a program or an erase) operation is simultaneously taking place on the other
bank.
In the device, a new design concept called FlexBankTM *1 Architecture is implemented. Using this concept the
device can execute simultaneous operation between Bank 1, a bank chosen from among the four banks, and
Bank 2, a bank consisting of the three remaining banks. This means that any bank can be chosen as Bank 1.
(Refer to “1. Simultaneous Operation” in “■FUNCTIONAL DESCRIPTION”.)
The standard device offers access time 70 ns, allowing operation of high-speed microprocessors without the
wait. To eliminate bus contention the device has separate chip enable (CE) , write enable (WE) and output enable
(OE) controls.
This device consists of pin and command set compatible with JEDEC standard E2PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The device is programmed by executing the program command sequence. This will invoke the Embedded
Program AlgorithmTM which is an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. Typically each sector can be programmed and verified in about 0.5 seconds. Erase is
accomplished by executing the erase command sequence. This will invoke the Embedded Erase AlgorithmTM
which is an internal algorithm that automatically preprograms the array if it is not already programmed before
executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies
the proper cell margin.
Each sector is typically erased and verified in 0.5 second (if already completely preprogrammed) .
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The device is erased when shipped from the factory.
The device features single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the device internally returns to the read mode.
The device also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program
Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the read
mode. The RESET pin may be tied to the system reset circuitry. Therefore if a system reset occurs during the
Embedded ProgramTM *2 Algorithm or Embedded EraseTM *2 Algorithm, the device is automatically reset to the
read mode and have erroneous data stored in the address locations being programmed or erased. These
locations need rewriting after the Reset. Resetting the device enables the system’s microprocessor to read the
boot-up firmware from the Flash memory.
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The device memory electrically erases the entire chip or all
bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/
word at a time using the EPROM programming mechanism of hot electron injection.
*1: FlexBankTM is a trademark of Fujitsu Limited.
*2: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
2
MBM29DL32TF/BF-70
■ FEATURES
• 0.17 µm Process Technology
• Two-bank Architecture for Simultaneous Read/Program and Read/Erase
• FlexBankTM
Bank A : 4 Mbit (8 KB × 8 and 64 KB × 7)
Bank B : 12 Mbit (64 KB × 24)
Bank C : 12 Mbit (64 KB × 24)
Bank D : 4 Mbit (64 KB × 8)
Two virtual Banks are chosen from the combination of four physical banks (Refer to “FlexBankTM Architecture
Table” and “Example of Virtual Banks Combination Table” in ■FUNCTIONAL DESCRIPTION)
Host system can program or erase in one bank, and then read immediately and simultaneously from the other
bank with zero latency between read and write operations.
Read-while-erase
Read-while-program
• Single 3.0 V Read, Program, and Erase
Minimizes system level power requirements
• Compatible with JEDEC-standard Commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard World-wide Pinouts
48-pin TSOP (1) (Package suffix : TN − Normal Bend Type)
48-ball FBGA (Package suffix : PBT)
• Minimum 100,000 Program/Erase Cycles
• High Performance
70 ns maximum access time
• Sector Erase Architecture
Eight 4 K word and sixty-three 32 K word sectors in word mode
Eight 8 K byte and sixty-three 64 K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• HiddenROM Region
256 byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
At VIL, allows protection of “outermost” 2 × 8 bytes on boot sectors, regardless of sector group protection/
unprotection status.
At VACC, increases program performance
• Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode
When addresses remain stable, automatically switch themselves to low power mode.
(Continued)
3
MBM29DL32TF/BF-70
(Continued)
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector Group Protection
Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary Sector Group Unprotection
Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
*: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
4
MBM29DL32TF/BF-70
■ PIN ASSIGNMENTS
TSOP (1)
(TOP VIEW)
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE
RESET
N.C.
WP/ACC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
(Marking Side)
Normal Bend
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE
A0
FPT-48P-M19
(Continued)
5
MBM29DL32TF/BF-70
(Continued)
FBGA
(TOP VIEW)
Marking side
A6
B6
C6
D6
E6
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
G6
BYTE DQ15/A-1
H6
VSS
A4
B4
C4
D4
E4
F4
G4
H4
WE
RESET
N.C.
A19
DQ5
DQ12
VCC
DQ4
A3
B3
RY/BY WP/ACC
C3
D3
E3
F3
G3
H3
A18
A20
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE
OE
VSS
(BGA-48P-M12)
6
F6
MBM29DL32TF/BF-70
■ PIN DESCRIPTION
Pin
Function
A20 to A0, A-1
Address Input
DQ15 to DQ0
Data Input/Output
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Hardware Reset Pin/Temporary Sector Group Unprotection
RY/BY
Ready/Busy Output
BYTE
Selects 8-bit or 16-bit mode
WP/ACC
Hardware Write Protection/Program Acceleration
VCC
Device Power Supply
VSS
Device Ground
N.C.
No Internal Connection
7
MBM29DL32TF/BF-70
■ BLOCK DIAGRAM
VCC
Cell Matrix
4 Mbit
(Bank A)
A20 to A0
(A-1)
Cell Matrix
12 Mbit
(Bank B)
X-Decoder
Y-Gating
Bank A
address
Y-Gating
VSS
X-Decoder
Bank B Address
State
Control
&
Command
Register
RY/BY
DQ15
to
DQ0
Status
Control
Bank C Address
X-Decoder
Cell Matrix
4 Mbit
(Bank D)
Bank D
address
Y-Gating
X-Decoder
Cell Matrix
12 Mbit
(Bank C)
■ LOGIC SYMBOL
A-1
21
A20 to A0
16 or 8
DQ15 to DQ0
CE
OE
WE
RESET
BYTE
WP/ACC
8
RY/BY
Y-Gating
RESET
WE
CE
OE
BYTE
WP/ACC
DQ15 to DQ0
MBM29DL32TF/BF-70
■ DEVICE BUS OPERATION
MBM29DL32TF/BF User Bus Operations Table (Word mode : BYTE = VIH)
Operation
CE OE WE
A0
A1
A2
A3
A6
A9
DQ15 to
DQ0
RESET
WP/
ACC
Standby
H
X
X
X
X
X
X
X
X
High-Z
H
X
Auto-Select Manufacturer
Code *1
L
L
H
L
L
L
L
L
VID
Code
H
X
Auto-Select Device Code *1
L
L
H
H
L
L
L
L
VID
Code
H
X
Extended Auto-Select Device
Code *1
L
L
H
L
H
H
H
L
VID
Code
H
X
L
L
H
H
H
H
H
L
VID
Code
H
X
3
L
L
H
A0
A1
A2
A3
A6
A9
DOUT
H
X
Output Disable
L
H
H
X
X
X
X
X
X
High-Z
H
X
Write (Program/Erase)
L
H
L
A0
A1
A2
A3
A6
A9
DIN
H
X
Enable Sector Group
Protection *2, *4
L
VID
L
H
L
L
L
VID
X
H
X
Verify Sector Group Protection
*2, *4
L
L
H
L
H
L
L
L
VID
Code
H
X
Temporary Sector Group
Unprotection *5
X
X
X
X
X
X
X
X
X
X
VID
X
Reset (Hardware) /Standby
X
X
X
X
X
X
X
X
X
High-Z
L
X
Boot Block Sector Write
Protection
X
X
X
X
X
X
X
X
X
X
X
L
Read *
Legend : L = VIL, H = VIH, X = VIL or VIH,
= Pulse input. See “■DC CHARACTERISTICS” for voltage levels.
*1: Manufacturer and device codes may also be accessed via a command register write sequence. See
“MBM29DL32TF/BF Command Definitions Table”.
*2: Refer to section on “8. Sector Group Protection” in ■FUNCTIONAL DESCRIPTION.
*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*4: VCC = +2.7 V to +3.6 V
*5: Also used for the extended sector group protection.
9
MBM29DL32TF/BF-70
MBM29DL32TF/BF User Bus Operations Table (Byte mode : BYTE = VIL)
Operation
CE OE WE
DQ15
/A-1
A0
A1
A2
A3
A6
A9 DQ7 to DQ0 RESET
Standby
H
X
X
X
X
X
X
X
X
X
High-Z
H
X
Auto-Select
Manufacturer Code *1
L
L
H
L
L
L
L
L
L
VID
Code
H
X
Auto-Select Device
Code *1
L
L
H
L
H
L
L
L
L
VID
Code
H
X
L
L
H
L
L
H
H
H
L
VID
Code
H
X
Extended Auto-Select
Device Code *1
L
L
H
L
H
H
H
H
L
VID
Code
H
X
3
L
L
H
A-1
A0
A1
A2
A3
A6
A9
DOUT
H
X
Output Disable
L
H
H
X
X
X
X
X
X
X
High-Z
H
X
Write (Program/Erase)
L
H
L
A-1
A0
A1
A2
A3
A6
A9
DIN
H
X
Enable Sector Group
Protection *2, *4
L
VID
L
L
H
L
L
L
VID
X
H
X
Verify Sector Group
Protection *2, *4
L
L
H
L
L
H
L
L
L
VID
Code
H
X
Temporary Sector
Group Unprotection *5
X
X
X
X
X
X
X
X
X
X
X
VID
X
Reset (Hardware) /
Standby
X
X
X
X
X
X
X
X
X
X
High-Z
L
X
Boot Block Sector Write
Protection
X
X
X
X
X
X
X
X
X
X
X
X
L
Read *
Legend : L = VIL, H = VIH, X = VIL or VIH,
= Pulse input. See “■DC CHARACTERISTICS” for voltage levels.
*1: Manufacturer and device codes may also be accessed via a command register write sequence. See
“MBM29DL32TF/BF Command Definitions Table”.
*2: Refer to section on “8. Sector Group Protection” in ■FUNCTIONAL DESCRIPTION.
*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*4: VCC = +2.7 V to +3.6 V
*5: Also used for extended sector group protection.
10
WP/
ACC
MBM29DL32TF/BF-70
MBM29DL32TF/BF Command Definitions Table*1
Command
sequence
Read/Reset*2
Read/Reset*2
Word
Byte
Word
Byte
Bus
write
cycles
req’d
1
3
Word
Autoselect
Program
Word
Byte
4
Program Resume
1
Word
Byte
Word
Byte
Erase Suspend*3
Erase Resume*
3
Set to
Fast Mode
Word
Fast
Program *4
Word
Reset from
Fast Mode *5
Word
Byte
Byte
Byte
Extended
Word
Sector Group
Protection *6,*7 Byte
6
6
Query *8
555h
AAAh
Byte
HiddenROM Word
Program *9,*10 Byte
555h
2AAh
AAh
555h
AAAh
AAh
B0h
BA
30h
AAAh
555h
AAAh
55h
555h
BA
555h
55h
AAh
AAh
2AAh
555h
55h




2AAh
555h
2AAh
555h
55h
55h

555h
AAAh
(BA)
555h



F0h RA*12 RD*12








90h
IA*12
ID*12




A0h
PA
PD




















(BA)
AAAh
555h
AAAh
555h
AAAh
555h
AAAh
80h
80h
555h
AAAh
555h
AAAh
AAh
AAh
2AAh
555h
2AAh
555h
55h
555h
AAAh
10h
55h
SA
30h










1
BA
30h










20h






















3
2
2
3
3
4
Word
555h
AAAh
AAh
XXXh A0h
BA
(BA)
55h
(BA)
AAh
555h
AAAh
555h
AAAh
2AAh
555h
PA
98h
AAh
AAh
555h
PD
555h
AAAh
SPA
60h
SPA
40h
SPA
*12
SD*12














88h






A0h
(HRA)
PA
PD




90h XXXh
00h




2AAh
555h
2AAh
555h
55h
55h
2AAh
AAh
AAAh
55h
90h XXXh 00h*11
XXXh 60h
4
Byte
2AAh

B0h
1
Word
AAh

BA
Byte
HiddenROM
Exit *10
XXXh F0h
Fifth bus
Sixth bus
write cycle write cycle
1
Word
HiddenROM
Entry*9
Addr. Data Addr. Data Addr. Data Addr. Data
AAAh
1
Sector Erase
Addr. Data Addr. Data
3
Program Suspend
Chip Erase
Third bus
write cycle
555h
Byte
Fourth bus
read/write
cycle
First bus Second bus
write cycle write cycle
55h
555h
555h
AAAh
555h
AAAh
(HRBA)
(HRBA)
(Continued)
11
MBM29DL32TF/BF-70
(Continued)
*1
*2
*3
*4
*5
*6
*7
*8
*9
*10
*11
*12
: Command combinations not described in “MBM29DL32TF/BF Command Definitions Table” are illegal.
: Both of these reset commands are equivalent.
: Erase Suspend and Erase Resume command are valid only during a sector erase operation.
: This command is valid during Fast Mode.
: The Reset from Fast mode command is required to return to the Read mode when the device is in Fast mode.
: This command is valid while RESET = VID (except during HiddenROM mode).
: Sector Group Address (SGA) with (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0)
: The valid address are A6 to A0.
: The HiddenROM Entry command is required prior to the HiddenROM programming.
: This command is valid during HiddenROM mode.
: The date “F0h” is also acceptable.
: Fourth bus cycle becomes read cycle.
Notes: • Address bits A20 to A11 = X = “H” or “L” for all address commands except or Program Address (PA) , Sector
Address (SA) , Bank Address (BA) .
• Bus operations are defined in “MBM29DL32TF/BF User Bus Operations Tables (BYTE = VIH and BYTE
= VIL)” (■DEVICE BUS OPERATION).
• RA
= Address of the memory location to be read
IA
= Autoselect read address that sets both the bank address specified at (A20, A19, A18) and all the
other A6, A3, A2, A1, A0, (A−1) .
PA
= Address of the memory location to be programmed
Addresses are latched on the falling edge of the write pulse.
SA
= Address of the sector to be erased. The combination of A20, A19, A18, A17, A16, A15, A14, A13, and
A12 will uniquely select any sector.
BA
= Bank Address (A20 to A18)
• RD
= Data read from location RA during read operation.
ID
= Device code/manufacture code for the address located by IA.
PD
= Data to be programmed at location PA. Data is latched on the rising edge of write pulse.
• SPA = Sector group address to be protected. Set sector group address and (A6, A3, A2, A1, A0) = (0, 0, 0,
1, 0) .
SGA = Sector Group Address. The combination of A20 to A12 will uniquely select any sector group.
SD
= Sector group protection verify data. Output 01h at protected sector group addresses and output
00h at unprotected sector group addresses.
• HRA = Address of the HiddenROM area
MBM29DL32TF (Top Boot Type)
Word Mode : 1FF000h to 1FF07Fh
Byte Mode : 3FE000h to 3FE0FFh
MBM29DL32BF (Bottom Boot Type) Word Mode : 000000h to 00007Fh
Byte Mode : 00000h to 0000FFh
• HRBA = Bank Address of the HiddenROM area
MBM29DL32TF (Top Boot Type)
: A20 = A19 = A18 = VIL
MBM29DL32BF (Bottom Boot Type) : A20 = A19 = A18 = VIH
• The system should generate the following address patterns :
Word Mode : 555h or 2AAh to addresses A10 to A0
Byte Mode : AAAh or 555h to addresses A10 to A0, and A-1
• Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
12
MBM29DL32TF/BF-70
MBM29DL32TF Sector Group Protection Verify Autoselect Codes Table
Type
Manufacture’s
Code
Device Code
A20 to A12
A6
A3
A2
A1
A0
BA*3
VIL
VIL
VIL
VIL
VIL
BA*3
VIL
VIL
VIL
VIL
VIH
BA*3
VIL
VIH
VIH
VIH
VIL
BA*3
VIL
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIH
VIL
Byte
Word
Byte
Word
Byte
Extended Device
Code*4
Word
Byte
Word
Sector Group
Protection
Byte
Sector Group
Addresses
Word
A-1*1
Code (HEX)
VIL
04h
X
0004h
VIL
7Eh
X
227Eh
VIL
0Ah
X
220Ah
VIL
01h
X
2201h
VIL
01h*2
X
0001h*2
*1 : A-1 is for Byte mode. At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
*2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*3 : When VID is applied to A9, both Bank 1 and Bank 2 are put into Autoselect mode, which makes simultaneous
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables
to activate simultaneous operation.
*4 : At WORD mode, a read cycle at address (BA) 01h (at BYTE mode, (BA) 02h) outputs device code. When 227Eh
(at BYTE mode, 7Eh) is output, it indicates that two additional codes, called Extended Device Codes, will be
required. Therefore the system may continue reading out these Extended Device Codes at the address of (BA)
0Eh (at BYTE mode, (BA) 1Ch), as well as at (BA) 0Fh (at BYTE mode, (BA) 1Eh).
MBM29DL32TF Extended Autoselect Code Table
Type
Code
Manufacture’s
Code
Byte*
Device
Code
Byte*
04h A-1
Word 0004h
0
0Ah A-1
Word 220Ah
Byte*
0
7Eh A-1
Word 227Eh
Byte*
Extended
Device
Code
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9
0
01h A-1
Word 2201h
0
Sector
Byte*
01h A-1
Group
Protection Word 0001h 0
DQ8
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
1
1
1
1
1
1
0
0
1
0
0
0
1
0
0
1
1
1
1
1
1
0
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
0
0
0
1
0
1
0
0
1
0
0
0
1
0
0
0
0
0
1
0
1
0
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
0
0
0
0
0
0
1
0
1
0
0
0
1
0
0
0
0
0
0
0
0
1
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
HZ: High-Z
* : At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
13
MBM29DL32TF/BF-70
MBM29DL32BF Sector Group Protection Verify Autoselect Codes Table
Type
Manufacture’s
Code
Device Code
A20 to A12
A6
A3
A2
A1
A0
BA*3
VIL
VIL
VIL
VIL
VIL
BA*3
VIL
VIL
VIL
VIL
VIH
BA*3
VIL
VIH
VIH
VIH
VIL
BA*3
VIL
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIH
VIL
Byte
Word
Byte
Word
Byte
Extended Device
Code*4
Word
Byte
Word
Sector Group
Protection
Byte Sector Group
Word Addresses
A-1*1
Code (HEX)
VIL
04h
X
0004h
VIL
7Eh
X
227Eh
VIL
0Ah
X
220Ah
VIL
00h
X
2200h
VIL
01h*2
X
0001h*2
*1 : A-1 is for Byte mode. At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
*2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*3 : When VID is applied to A9, both Bank 1 and Bank 2 are put into Autoselect mode, which makes simultaneous
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables
to activate simultaneous operation.
*4 : At WORD mode, a read cycle at address (BA) 01h (at BYTE mode, (BA) 02h) outputs device code. When 227Eh
(at BYTE mode, 7Eh) is output, it indicates that two additional codes, called Extended Device Codes, will be
required. Therefore the system may continue reading out these Extended Device Codes at the address of (BA)
0Eh (at BYTE mode, (BA) 1Ch), as well as at (BA) 0Fh (at BYTE mode, (BA) 1Eh).
MBM29DL32BF Extended Autoselect Code Table
Type
Manufacture’s
Code
Device
Code
Code
Byte*
Word 0004h
Byte*
7Eh
Word 227Eh
Byte*
Extended
Device
Code
04h
0Ah
Word 220Ah
Byte*
00h
Word 2200h
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9
DQ8
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A-1
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
A-1
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
1
1
1
1
1
1
0
0
0
1
0
0
0
1
0
0
1
1
1
1
1
1
0
A-1
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
0
0
0
1
0
1
0
0
0
1
0
0
0
1
0
0
0
0
0
1
0
1
0
A-1
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
HZ
HZ
HZ
HZ
HZ
HZ
HZ
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
A-1
Sector
Byte* 01h
Group
Protection Word 0001h 0
HZ: High-Z
* : At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address.
14
MBM29DL32TF/BF-70
■ FLEXIBLE SECTOR-ERASE ARCHITECTURE
Sector Address Table (MBM29DL32TF)
B
a Secn tor
k
B
a
n
k
D
B
a
n
k
C
Sector address
Bank
address
A20 A19 A18 A17 A16 A15 A14 A13 A12 A11
Sector
size
(Kbytes/
Kwords)
(×8)
Address range
(×16)
Address range
SA0
0
0
0
0
0
0
X
X
X
X
64/32
000000h to 00FFFFh 000000h to 007FFFh
SA1
0
0
0
0
0
1
X
X
X
X
64/32
010000h to 01FFFFh 008000h to 00FFFFh
SA2
0
0
0
0
1
0
X
X
X
X
64/32
020000h to 02FFFFh 010000h to 017FFFh
SA3
0
0
0
0
1
1
X
X
X
X
64/32
030000h to 03FFFFh 018000h to 01FFFFh
SA4
0
0
0
1
0
0
X
X
X
X
64/32
040000h to 04FFFFh 020000h to 027FFFh
SA5
0
0
0
1
0
1
X
X
X
X
64/32
050000h to 05FFFFh 028000h to 02FFFFh
SA6
0
0
0
1
1
0
X
X
X
X
64/32
060000h to 06FFFFh 030000h to 037FFFh
SA7
0
0
0
1
1
1
X
X
X
X
64/32
070000h to 07FFFFh 038000h to 03FFFFh
SA8
0
0
1
0
0
0
X
X
X
X
64/32
080000h to 08FFFFh 040000h to 047FFFh
SA9
0
0
1
0
0
1
X
X
X
X
64/32
090000h to 09FFFFh 048000h to 04FFFFh
SA10
0
0
1
0
1
0
X
X
X
X
64/32
0A0000h to 0AFFFFh 050000h to 057FFFh
SA11
0
0
1
0
1
1
X
X
X
X
64/32
0B0000h to 0BFFFFh 058000h to 05FFFFh
SA12
0
0
1
1
0
0
X
X
X
X
64/32
0C0000h to 0CFFFFh 060000h to 067FFFh
SA13
0
0
1
1
0
1
X
X
X
X
64/32
0D0000h to 0DFFFFh 068000h to 06FFFFh
SA14
0
0
1
1
1
0
X
X
X
X
64/32
0E0000h to 0EFFFFh 070000h to 077FFFh
SA15
0
0
1
1
1
1
X
X
X
X
64/32
0F0000h to 0FFFFFh 078000h to 07FFFFh
SA16
0
1
0
0
0
0
X
X
X
X
64/32
100000h to 10FFFFh 080000h to 087FFFh
SA17
0
1
0
0
0
1
X
X
X
X
64/32
110000h to 11FFFFh 088000h to 08FFFFh
SA18
0
1
0
0
1
0
X
X
X
X
64/32
120000h to 12FFFFh 090000h to 097FFFh
SA19
0
1
0
0
1
1
X
X
X
X
64/32
130000h to 13FFFFh 098000h to 09FFFFh
SA20
0
1
0
1
0
0
X
X
X
X
64/32
140000h to 14FFFFh 0A0000h to 0A7FFFh
SA21
0
1
0
1
0
1
X
X
X
X
64/32
150000h to 15FFFFh 0A8000h to 0AFFFFh
SA22
0
1
0
1
1
0
X
X
X
X
64/32
160000h to 16FFFFh 0B0000h to 0B7FFFh
SA23
0
1
0
1
1
1
X
X
X
X
64/32
170000h to 17FFFFh 0B8000h to 0BFFFFh
SA24
0
1
1
0
0
0
X
X
X
X
64/32
180000h to 18FFFFh 0C0000h to 0C7FFFh
SA25
0
1
1
0
0
1
X
X
X
X
64/32
190000h to 19FFFFh 0C8000h to 0CFFFFh
SA26
0
1
1
0
1
0
X
X
X
X
64/32
1A0000h to 1AFFFFh 0D0000h to 0D7FFFh
SA27
0
1
1
0
1
1
X
X
X
X
64/32
1B0000h to 1BFFFFh 0D8000h to 0DFFFFh
SA28
0
1
1
1
0
0
X
X
X
X
64/32
1C0000h to 1CFFFFh 0E0000h to 0E7FFFh
SA29
0
1
1
1
0
1
X
X
X
X
64/32
1D0000h to 1DFFFFh 0E8000h to 0EFFFFh
SA30
0
1
1
1
1
0
X
X
X
X
64/32
1E0000h to 1EFFFFh 0F0000h to 0F7FFFh
SA31
0
1
1
1
1
1
X
X
X
X
64/32
1F0000h to 1FFFFFh 0F8000h to 0FFFFFh
(Continued)
15
MBM29DL32TF/BF-70
B
a Secn tor
k
B
a
n
k
B
Sector address
Bank
address
A20 A19 A18 A17 A16 A15 A14 A13 A12 A11
Sector
size
(Kbytes/
Kwords)
(×8)
Address range
(×16)
Address range
SA32
1
0
0
0
0
0
X
X
X
X
64/32
200000h to 20FFFFh 100000h to 107FFFh
SA33
1
0
0
0
0
1
X
X
X
X
64/32
210000h to 21FFFFh 108000h to 10FFFFh
SA34
1
0
0
0
1
0
X
X
X
X
64/32
220000h to 22FFFFh 110000h to 117FFFh
SA35
1
0
0
0
1
1
X
X
X
X
64/32
230000h to 23FFFFh 118000h to 11FFFFh
SA36
1
0
0
1
0
0
X
X
X
X
64/32
240000h to 24FFFFh 120000h to 127FFFh
SA37
1
0
0
1
0
1
X
X
X
X
64/32
250000h to 25FFFFh 128000h to 12FFFFh
SA38
1
0
0
1
1
0
X
X
X
X
64/32
260000h to 26FFFFh 130000h to 137FFFh
SA39
1
0
0
1
1
1
X
X
X
X
64/32
270000h to 27FFFFh 138000h to 13FFFFh
SA40
1
0
1
0
0
0
X
X
X
X
64/32
280000h to 28FFFFh 140000h to 147FFFh
SA41
1
0
1
0
0
1
X
X
X
X
64/32
290000h to 29FFFFh 148000h to 14FFFFh
SA42
1
0
1
0
1
0
X
X
X
X
64/32
2A0000h to 2AFFFFh 150000h to 157FFFh
SA43
1
0
1
0
1
1
X
X
X
X
64/32
2B0000h to 2BFFFFh 158000h to 15FFFFh
SA44
1
0
1
1
0
0
X
X
X
X
64/32
2C0000h to 2CFFFFh 160000h to 167FFFh
SA45
1
0
1
1
0
1
X
X
X
X
64/32
2D0000h to 2DFFFFh 168000h to 16FFFFh
SA46
1
0
1
1
1
0
X
X
X
X
64/32
2E0000h to 2EFFFFh 170000h to 177FFFh
SA47
1
0
1
1
1
1
X
X
X
X
64/32
2F0000h to 2FFFFFh 178000h to 17FFFFh
SA48
1
1
0
0
0
0
X
X
X
X
64/32
300000h to 30FFFFh 180000h to 187FFFh
SA49
1
1
0
0
0
1
X
X
X
X
64/32
310000h to 31FFFFh 188000h to 18FFFFh
SA50
1
1
0
0
1
0
X
X
X
X
64/32
320000h to 32FFFFh 190000h to 197FFFh
SA51
1
1
0
0
1
1
X
X
X
X
64/32
330000h to 33FFFFh 198000h to 19FFFFh
SA52
1
1
0
1
0
0
X
X
X
X
64/32
340000h to 34FFFFh 1A0000h to 1A7FFFh
SA53
1
1
0
1
0
1
X
X
X
X
64/32
350000h to 35FFFFh 1A8000h to 1AFFFFh
SA54
1
1
0
1
1
0
X
X
X
X
64/32
360000h to 36FFFFh 1B0000h to 1B7FFFh
SA55
1
1
0
1
1
1
X
X
X
X
64/32
370000h to 37FFFFh 1B8000h to 1BFFFFh
(Continued)
16
MBM29DL32TF/BF-70
(Continued)
B
a Secn tor
k
Sector address
Bank
address
A20 A19 A18 A17 A16 A15 A14 A13 A12 A11
Sector
size
(Kbytes/
Kwords)
(×8)
Address range
(×16)
Address range
SA56
1
1
1
0
0
0
X
X
X
X
64/32
380000h to 38FFFFh 1C0000h to 1C7FFFh
SA57
1
1
1
0
0
1
X
X
X
X
64/32
390000h to 39FFFFh 1C8000h to 1CFFFFh
SA58
1
1
1
0
1
0
X
X
X
X
64/32
3A0000h to 3AFFFFh 1D0000h to 1D7FFFh
SA59
1
1
1
0
1
1
X
X
X
X
64/32
3B0000h to 3BFFFFh 1D8000h to 1DFFFFh
SA60
1
1
1
1
0
0
X
X
X
X
64/32
3C0000h to 3CFFFFh 1E0000h to 1E7FFFh
SA61
B
a SA62
n SA63
k
SA64
A
SA65
1
1
1
1
0
1
X
X
X
X
64/32
3D0000h to 3DFFFFh 1E8000h to 1EFFFFh
1
1
1
1
1
0
X
X
X
X
64/32
3E0000h to 3EFFFFh 1F0000h to 1F7FFFh
1
1
1
1
1
1
0
0
0
X
8/4
3F0000h to 3F1FFFh 1F8000h to 1F8FFFh
1
1
1
1
1
1
0
0
1
X
8/4
3F2000h to 3F3FFFh 1F9000h to 1F9FFFh
1
1
1
1
1
1
0
1
0
X
8/4
3F4000h to 3F5FFFh 1FA000h to 1FAFFFh
SA66
1
1
1
1
1
1
0
1
1
X
8/4
3F6000h to 3F7FFFh 1FB000h to 1FBFFFh
SA67
1
1
1
1
1
1
1
0
0
X
8/4
3F8000h to 3F9FFFh 1FC000h to 1FCFFFh
SA68
1
1
1
1
1
1
1
0
1
X
8/4
3FA000h to 3FBFFFh 1FD000h to 1FDFFFh
SA69
1
1
1
1
1
1
1
1
0
X
8/4
3FC000h to 3FDFFFh 1FE000h to 1FEFFFh
SA70
1
1
1
1
1
1
1
1
1
X
8/4
3FE000h to 3FFFFFh 1FF000h to 1FFFFFh
Notes : • The address range is A20 : A-1 if in byte mode (BYTE = VIL) .
• The address range is A20 : A0 if in word mode (BYTE = VIH) .
17
MBM29DL32TF/BF-70
Sector Address Table (MBM29DL32BF)
B
a Secn tor
k
B
a
n
k
D
B
a
n
k
C
Sector address
Bank
address
A20 A19 A18 A17 A16 A15 A14 A13 A12 A11
Sector
size
(Kbytes/
Kwords)
(×8)
Address range
(×16)
Address range
SA70
1
1
1
1
1
1
X
X
X
X
64/32
3F0000h to 3FFFFFh 1F8000h to 1FFFFFh
SA69
1
1
1
1
1
0
X
X
X
X
64/32
3E0000h to 3EFFFFh 1F0000h to 1F7FFFh
SA68
1
1
1
1
0
1
X
X
X
X
64/32
3D0000h to 3DFFFFh 1E8000h to 1EFFFFh
SA67
1
1
1
1
0
0
X
X
X
X
64/32
3C0000h to 3CFFFFh 1E0000h to 1E7FFFh
SA66
1
1
1
0
1
1
X
X
X
X
64/32
3B0000h to 3BFFFFh 1D8000h to 1DFFFFh
SA65
1
1
1
0
1
0
X
X
X
X
64/32
3A0000h to 3AFFFFh 1D0000h to 1D7FFFh
SA64
1
1
1
0
0
1
X
X
X
X
64/32
390000h to 39FFFFh 1C8000h to 1CFFFFh
SA63
1
1
1
0
0
0
X
X
X
X
64/32
380000h to 38FFFFh 1C0000h to 1C7FFFh
SA62
1
1
0
1
1
1
X
X
X
X
64/32
370000h to 37FFFFh 1B8000h to 1BFFFFh
SA61
1
1
0
1
1
0
X
X
X
X
64/32
360000h to 36FFFFh 1B0000h to 1B7FFFh
SA60
1
1
0
1
0
1
X
X
X
X
64/32
350000h to 35FFFFh 1A8000h to 1AFFFFh
SA59
1
1
0
1
0
0
X
X
X
X
64/32
340000h to 34FFFFh 1A0000h to 1A7FFFh
SA58
1
1
0
0
1
1
X
X
X
X
64/32
330000h to 33FFFFh 198000h to 19FFFFh
SA57
1
1
0
0
1
0
X
X
X
X
64/32
320000h to 32FFFFh 190000h to 197FFFh
SA56
1
1
0
0
0
1
X
X
X
X
64/32
310000h to 31FFFFh 188000h to 18FFFFh
SA55
1
1
0
0
0
0
X
X
X
X
64/32
300000h to 30FFFFh 180000h to 187FFFh
SA54
1
0
1
1
1
1
X
X
X
X
64/32
2F0000h to 2FFFFFh 178000h to 17FFFFh
SA53
1
0
1
1
1
0
X
X
X
X
64/32
2E0000h to 2EFFFFh 170000h to 177FFFh
SA52
1
0
1
1
0
1
X
X
X
X
64/32
2D0000h to 2DFFFFh 168000h to 16FFFFh
SA51
1
0
1
1
0
0
X
X
X
X
64/32
2C0000h to 2CFFFFh 160000h to 167FFFh
SA50
1
0
1
0
1
1
X
X
X
X
64/32
2B0000h to 2BFFFFh 158000h to 15FFFFh
SA49
1
0
1
0
1
0
X
X
X
X
64/32
2A0000h to 2AFFFFh 150000h to 157FFFh
SA48
1
0
1
0
0
1
X
X
X
X
64/32
290000h to 29FFFFh 148000h to 14FFFFh
SA47
1
0
1
0
0
0
X
X
X
X
64/32
280000h to 28FFFFh 140000h to 147FFFh
SA46
1
0
0
1
1
1
X
X
X
X
64/32
270000h to 27FFFFh 138000h to 13FFFFh
SA45
1
0
0
1
1
0
X
X
X
X
64/32
260000h to 26FFFFh 130000h to 137FFFh
SA44
1
0
0
1
0
1
X
X
X
X
64/32
250000h to 25FFFFh 128000h to 12FFFFh
SA43
1
0
0
1
0
0
X
X
X
X
64/32
240000h to 24FFFFh 120000h to 127FFFh
SA42
1
0
0
0
1
1
X
X
X
X
64/32
230000h to 23FFFFh 118000h to 11FFFFh
SA41
1
0
0
0
1
0
X
X
X
X
64/32
220000h to 22FFFFh 110000h to 117FFFh
SA40
1
0
0
0
0
1
X
X
X
X
64/32
210000h to 21FFFFh 108000h to 10FFFFh
SA39
1
0
0
0
0
0
X
X
X
X
64/32
200000h to 20FFFFh 100000h to 107FFFh
(Continued)
18
MBM29DL32TF/BF-70
B
a Secn tor
k
B
a
n
k
B
Sector address
Bank
address
A20 A19 A18 A17 A16 A15 A14 A13 A12 A11
Sector
size
(Kbytes/
Kwords)
(×8)
Address range
(×16)
Address range
SA38
0
1
1
1
1
1
X
X
X
X
64/32
1F0000h to 1FFFFFh 0F8000h to 0FFFFFh
SA37
0
1
1
1
1
0
X
X
X
X
64/32
1E0000h to 1EFFFFh 0F0000h to 0F7FFFh
SA36
0
1
1
1
0
1
X
X
X
X
64/32
1D0000h to 1DFFFFh 0E8000h to 0EFFFFh
SA35
0
1
1
1
0
0
X
X
X
X
64/32
1C0000h to 1CFFFFh 0E0000h to 0E7FFFh
SA34
0
1
1
0
1
1
X
X
X
X
64/32
1B0000h to 1BFFFFh 0D8000h to 0DFFFFh
SA33
0
1
1
0
1
0
X
X
X
X
64/32
1A0000h to 1AFFFFh 0D0000h to 0D7FFFh
SA32
0
1
1
0
0
1
X
X
X
X
64/32
190000h to 19FFFFh 0C8000h to 0CFFFFh
SA31
0
1
1
0
0
0
X
X
X
X
64/32
180000h to 18FFFFh 0C0000h to 0C7FFFh
SA30
0
1
0
1
1
1
X
X
X
X
64/32
170000h to 17FFFFh 0B8000h to 0BFFFFh
SA29
0
1
0
1
1
0
X
X
X
X
64/32
160000h to 16FFFFh 0B0000h to 0B7FFFh
SA28
0
1
0
1
0
1
X
X
X
X
64/32
150000h to 15FFFFh 0A8000h to 0AFFFFh
SA27
0
1
0
1
0
0
X
X
X
X
64/32
140000h to 14FFFFh 0A0000h to 0A7FFFh
SA26
0
1
0
0
1
1
X
X
X
X
64/32
130000h to 13FFFFh 098000h to 09FFFFh
SA25
0
1
0
0
1
0
X
X
X
X
64/32
120000h to 12FFFFh 090000h to 097FFFh
SA24
0
1
0
0
0
1
X
X
X
X
64/32
110000h to 11FFFFh 088000h to 08FFFFh
SA23
0
1
0
0
0
0
X
X
X
X
64/32
100000h to 10FFFFh 080000h to 087FFFh
SA22
0
0
1
1
1
1
X
X
X
X
64/32
0F0000h to 0FFFFFh 078000h to 07FFFFh
SA21
0
0
1
1
1
0
X
X
X
X
64/32
0E0000h to 0EFFFFh 070000h to 077FFFh
SA20
0
0
1
1
0
1
X
X
X
X
64/32
0D0000h to 0DFFFFh 068000h to 06FFFFh
SA19
0
0
1
1
0
0
X
X
X
X
64/32
0C0000h to 0CFFFFh 060000h to 067FFFh
SA18
0
0
1
0
1
1
X
X
X
X
64/32
0B0000h to 0BFFFFh 058000h to 05FFFFh
SA17
0
0
1
0
1
0
X
X
X
X
64/32
0A0000h to 0AFFFFh 050000h to 057FFFh
SA16
0
0
1
0
0
1
X
X
X
X
64/32
090000h to 09FFFFh 048000h to 04FFFFh
SA15
0
0
1
0
0
0
X
X
X
X
64/32
080000h to 08FFFFh 040000h to 047FFFh
(Continued)
19
MBM29DL32TF/BF-70
(Continued)
B
a Secn tor
k
B
a
n
k
A
Sector address
Bank
address
A20 A19 A18 A17 A16 A15 A14 A13 A12 A11
Sector
size
(Kbytes/
Kwords)
(×8)
Address range
SA14
0
0
0
1
1
1
X
X
X
X
64/32
070000h to 07FFFFh 038000h to 03FFFFh
SA13
0
0
0
1
1
0
X
X
X
X
64/32
060000h to 06FFFFh 030000h to 037FFFh
SA12
0
0
0
1
0
1
X
X
X
X
64/32
050000h to 05FFFFh 028000h to 02FFFFh
SA11
0
0
0
1
0
0
X
X
X
X
64/32
040000h to 04FFFFh 020000h to 027FFFh
SA10
0
0
0
0
1
1
X
X
X
X
64/32
030000h to 03FFFFh 018000h to 01FFFFh
SA9
0
0
0
0
1
0
X
X
X
X
64/32
020000h to 02FFFFh 010000h to 017FFFh
SA8
0
0
0
0
0
1
X
X
X
X
64/32
010000h to 01FFFFh 008000h to 00FFFFh
SA7
0
0
0
0
0
0
1
1
1
X
8/4
00E000h to 00FFFFh 007000h to 007FFFh
SA6
0
0
0
0
0
0
1
1
0
X
8/4
00C000h to 00DFFFh 006000h to 006FFFh
SA5
0
0
0
0
0
0
1
0
1
X
8/4
00A000h to 00BFFFh 005000h to 005FFFh
SA4
0
0
0
0
0
0
1
0
0
X
8/4
008000h to 009FFFh 004000h to 004FFFh
SA3
0
0
0
0
0
0
0
1
1
X
8/4
006000h to 007FFFh 003000h to 003FFFh
SA2
0
0
0
0
0
0
0
1
0
X
8/4
004000h to 005FFFh 002000h to 002FFFh
SA1
0
0
0
0
0
0
0
0
1
X
8/4
002000h to 003FFFh 001000h to 001FFFh
SA0
0
0
0
0
0
0
0
0
0
X
8/4
000000h to 001FFFh 000000h to 000FFFh
Notes : • The address range is A20 : A-1 if in byte mode (BYTE = VIL) .
• The address range is A20 : A0 if in word mode (BYTE = VIH).
20
(×16)
Address range
MBM29DL32TF/BF-70
Sector Group Addresses Table (MBM29DL32TF)
Sector group
A20
A19
A18
A17
A16
A15
A14
A13
A12
Sectors
SGA0
0
0
0
0
0
0
X
X
X
SA0
0
1
1
0
X
X
X
SA1 to SA3
1
1
SGA1
0
0
0
0
SGA2
0
0
0
1
X
X
X
X
X
SA4 to SA7
SGA3
0
0
1
0
X
X
X
X
X
SA8 to SA11
SGA4
0
0
1
1
X
X
X
X
X
SA12 to SA15
SGA5
0
1
0
0
X
X
X
X
X
SA16 to SA19
SGA6
0
1
0
1
X
X
X
X
X
SA20 to SA23
SGA7
0
1
1
0
X
X
X
X
X
SA24 to SA27
SGA8
0
1
1
1
X
X
X
X
X
SA28 to SA31
SGA9
1
0
0
0
X
X
X
X
X
SA32 to SA35
SGA10
1
0
0
1
X
X
X
X
X
SA36 to SA39
SGA11
1
0
1
0
X
X
X
X
X
SA40 to SA43
SGA12
1
0
1
1
X
X
X
X
X
SA44 to SA47
SGA13
1
1
0
0
X
X
X
X
X
SA48 to SA51
SGA14
1
1
0
1
X
X
X
X
X
SA52 to SA55
SGA15
1
1
1
0
X
X
X
X
X
SA56 to SA59
0
0
0
1
X
X
X
SA60 to SA62
1
0
SGA16
1
1
1
1
SGA17
1
1
1
1
1
1
0
0
0
SA63
SGA18
1
1
1
1
1
1
0
0
1
SA64
SGA19
1
1
1
1
1
1
0
1
0
SA65
SGA20
1
1
1
1
1
1
0
1
1
SA66
SGA21
1
1
1
1
1
1
1
0
0
SA67
SGA22
1
1
1
1
1
1
1
0
1
SA68
SGA23
1
1
1
1
1
1
1
1
0
SA69
SGA24
1
1
1
1
1
1
1
1
1
SA70
21
MBM29DL32TF/BF-70
Sector Group Addresses Table (MBM29DL32BF)
Sector group
A20
A19
A18
A17
A16
A15
A14
A13
A12
Sectors
SGA0
0
0
0
0
0
0
0
0
0
SA0
SGA1
0
0
0
0
0
0
0
0
1
SA1
SGA2
0
0
0
0
0
0
0
1
0
SA2
SGA3
0
0
0
0
0
0
0
1
1
SA3
SGA4
0
0
0
0
0
0
1
0
0
SA4
SGA5
0
0
0
0
0
0
1
0
1
SA5
SGA6
0
0
0
0
0
0
1
1
0
SA6
SGA7
0
0
0
0
0
0
1
1
1
SA7
0
1
1
0
X
X
X
SA8 to SA10
1
1
SGA8
0
0
0
SGA9
0
0
0
1
X
X
X
X
X
SA11 to SA14
SGA10
0
0
1
0
X
X
X
X
X
SA15 to SA18
SGA11
0
0
1
1
X
X
X
X
X
SA19 to SA22
SGA12
0
1
0
0
X
X
X
X
X
SA23 to SA26
SGA13
0
1
0
1
X
X
X
X
X
SA27 to SA30
SGA14
0
1
1
0
X
X
X
X
X
SA31 to SA34
SGA15
0
1
1
1
X
X
X
X
X
SA35 to SA38
SGA16
1
0
0
0
X
X
X
X
X
SA39 to SA42
SGA17
1
0
0
1
X
X
X
X
X
SA43 to SA46
SGA18
1
0
1
0
X
X
X
X
X
SA47 to SA50
SGA19
1
0
1
1
X
X
X
X
X
SA51 to SA54
SGA20
1
1
0
0
X
X
X
X
X
SA55 to SA58
SGA21
1
1
0
1
X
X
X
X
X
SA59 to SA62
SGA22
1
1
1
0
X
X
X
X
X
SA63 to SA66
0
0
0
1
X
X
X
SA67 to SA69
1
0
1
1
X
X
X
SA70
SGA23
SGA24
22
0
1
1
1
1
1
1
1
1
MBM29DL32TF/BF-70
Common Flash Memory Interface Code Table
DQ15 to DQ0
A6 to A0
Description
0051h
0052h
0059h
10h
11h
12h
Query-unique ASCII string “QRY”
0002h
0000h
13h
14h
Primary OEM Command Set
02h : AMD/FJ standard type
0040h
0000h
15h
16h
Address for Primary Extended Table
0000h
0000h
17h
18h
Alternate OEM Command Set
(00h = not applicable)
0000h
0000h
19h
1Ah
Address for Alternate OEM Extended Table
0027h
1Bh
VCC Min voltage (write/erase) DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV
0036h
1Ch
VCC Max voltage (write/erase) DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV
0000h
1Dh
VPP Min voltage
0000h
1Eh
VPP Max voltage
0004h
1Fh
Typical timeout per word write 2N µs
0000h
20h
Typical timeout for buffer write 2N µs
000Ah
21h
Typical timeout per individual sector erase 2N ms
0000h
22h
Typical timeout for full chip erase 2N ms
0005h
23h
Max timeout for byte/word write 2N times typical
0000h
24h
Max timeout for buffer write 2N times typical
0004h
25h
Max timeout per individual sector erase 2N times typical
0000h
26h
Max timeout for full chip erase 2N times typical
0016h
27h
Device Size = 2N byte
0002h
0000h
28h
29h
I/O information
Flash Device Interface description 02h : ×8/×16
0000h
0000h
2Ah
2Bh
Max number of bytes in multi-byte write = 2N
0002h
2Ch
Number of Erase Block Regions within device
0007h
0000h
0020h
0000h
2Dh
2Eh
2Fh
30h
Erase Block Region 1 Information
bit 15 to bit 0 : y = number of sectors
bit 31 to bit 16 : z = size
(z × 256 bytes)
003Eh
0000h
0000h
0001h
31h
32h
33h
34h
Erase Block Region 2 Information
bit 15 to bit 0 : y = number of sectors
bit 31 to bit 16 : z = size
(z × 256 bytes)
0050h
0052h
0049h
40h
41h
42h
Query-unique ASCII string “PRI”
0031h
43h
Major version number, ASCII
(Continued)
23
MBM29DL32TF/BF-70
(Continued)
DQ15 to DQ0
24
A6 to A0
Description
0033h
44h
Minor version number, ASCII
0004h
45h
Address Sensitive and Silicon Version
04h = Required and 0.17 µm process technology
05h = Not required and 0.17 µm process technology
0002h
46h
Erase Suspend
02h = To Read & Write
0001h
47h
Sector Protection
00h = Not Supported
X = Number of sectors per group
0001h
48h
Sector Temporary Unprotection
01h = Supported
0004h
49h
Sector Protection Algorithm
0038h
4Ah
Dual Operation
00h = Not Supported
X = Total number of sectors in all banks except Bank 1
0000h
4Bh
Burst Mode Type
00h = Not Supported
0000h
4Ch
Page Mode Type
00h = Not Supported
0085h
4Dh
VACC (Acceleration) Supply Minimum
DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV
0095h
4Eh
VACC (Acceleration) Supply Maximum
DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV
00XXh
4Fh
Boot Type
02h = MBM29DL32BF
03h = MBM29DL32TF
0001h
50h
Program Suspend
01h = Supported
0004h
57h
Bank Organization
X = Total Number of Banks
000Fh
58h
Bank A Region Information
X = Number of sectors in Bank A
0018h
59h
Bank B Region Information
X = Number of sectors in Bank B
0018h
5Ah
Bank C Region Information
X = Number of sectors in Bank C
0008h
5Bh
Bank D Region Information
X = Number of sectors in Bank D
MBM29DL32TF/BF-70
■ FUNCTIONAL DESCRIPTION
1. Simultaneous Operation
The device features functions that enable reading of data from one memory bank while a program or erase
operation is in progress in the other memory bank (simultaneous operation) , in addition to conventional features
(read, program, erase, erase-suspend read, and erase-suspend program) . The bank can be selected by bank
address (A20, A19, A18) with zero latency. The device consists of the following four banks :
Bank A : 8 × 8 KB and 7 × 64 KB; Bank B : 24 × 64 KB; Bank C : 24 × 64 KB; Bank D : 8 × 64 KB.
The device can execute simultaneous operations between Bank 1, a bank chosen from among the four banks,
and Bank 2, a bank consisting of the three remaining banks. (See “FlexBankTM Architecture Table”.) This is what
we call a “FlexBank”, for example, the rest of banks B, C and D to let the system read while Bank A is in the
process of program (or erase) operation. However, the different types of operations for the three banks are
impossible, e.g. Bank A writing, Bank B erasing, and Bank C reading out. With this “FlexBank”, as described in
“Example of Virtual Banks Combination Table”, the system gets to select from four combinations of data volume
for Bank 1 and Bank 2, which works well to meet the system requirement. The simultaneous operation cannot
execute multi-function mode in the same bank. “Simultaneous Operation Table” shows the possible combinations
for simultaneous operation.Refer to “8. Bank-to-Bank Read/Write Timing Diagram” in ■TIMING DIAGRAM.
FlexBankTM Architecture Table
Bank 1
Bank 2
Bank
Splits
Volume
Combination
Volume
Combination
1
4 Mbit
Bank A
28 Mbit
Bank B, C, D
2
12 Mbit
Bank B
20 Mbit
Bank A, C, D
3
12 Mbit
Bank C
20 Mbit
Bank A, B, D
4
4 Mbit
Bank D
28 Mbit
Bank A, B, C
Example of Virtual Banks Combination Table
Bank 1
Bank
Splits Volume Combination
Bank 2
Sector Size
Volume Combination
Sector Size
1
4 Mbit
Bank A
8 × 8 Kbyte/4 Kword
+
7 × 64 Kbyte/32 Kword
28 Mbit
Bank B
+
Bank C
+
Bank D
2
8 Mbit
Bank A
+
Bank D
8 × 8 Kbyte/4 Kword
+
24 Mbit
15 × 64 Kbyte/32 Kword
Bank B
+
Bank C
48 × 64 Kbyte/32 Kword
3
16 Mbit
Bank A
+
Bank B
8 × 8 Kbyte/4 Kword
+
16 Mbit
31 × 64 Kbyte/32 Kword
Bank C
+
Bank D
32 × 64 Kbyte/32 Kword
56 × 64 Kbyte/32 Kword
Note : When multiple sector erase over several banks is operated, the system cannot read out of the bank to which
a sector being erased belongs. For example, suppose that erasing is taking place at both Bank A and Bank B,
neither Bank A nor Bank B is read out (they would output the sequence flag once they were selected.)
Meanwhile the system would get to read from either Bank C or Bank D.
25
MBM29DL32TF/BF-70
Simultaneous Operation Table
Case
Bank 1 status
Bank 2 status
1
Read Mode
Read Mode
2
Read Mode
Autoselect Mode
3
Read Mode
Program Mode
4
Read Mode
Erase Mode *
5
Autoselect Mode
Read Mode
6
Program Mode
Read Mode
7
Erase Mode *
Read Mode
* : By writing erase-suspend command on the bank address of sector being erased, the erase operation gets
suspended so that it enables reading from or programming the remaining sectors.
Note: Bank 1 and Bank 2 are divided for the sake of convenience at Simultaneous Operation. The Bank consists
of 4 banks, Bank A, Bank B, Bank C and Bank D. Bank Address (BA) means to specify each of the Banks.
2. Standby Mode
There are two ways to implement the standby mode on the MBM29DL32TF/BF devices, one using both the CE
and RESET pins; the other via the RESET pin only.
When using both pins, CMOS standby mode is achieved with CE and RESET inputs both held at VCC ± 0.3 V.
Under this condition the current consumed is less than 5 µA Max. During Embedded Algorithm operation, VCC
active current (ICC2) is required even when CE = “H”. The device can be read with standard access time (tCE)
from either of these standby modes.
When using the RESET pin only, CMOS standby mode is achieved with RESET input held at VSS ± 0.3 V (CE
= “H” or “L”) . Under this condition the current consumed is less than 5 µA Max. Once the RESET pin is taken
high, the device requires tRH of wake up time before outputs are valid for read access.
In the standby mode the outputs are in the high impedance state, independent of the OE input.
3. Automatic Sleep Mode
Automatic sleep mode works to restrain power consumption during read-out of MBM29DL32TF/BF data. This
mode can be used effectively with an application requested low power consumption such as handy terminals.
To activate this mode, MBM29DL32TF/BF automatically switch themselves to low power mode when
MBM29DL32TF/BF addresses remain stable during access fine of 150 ns. It is not necessary to control CE,
WE, and OE on the mode. Under the mode, the current consumed is typically 1 µA (CMOS Level) .
During simultaneous operation, VCC active current (ICC2) is required.
Since the data are latched during this mode, the data are continuously read-out. If the addresses are changed,
the mode is automatically canceled and MBM29DL32TF/BF read-out the data for changed addresses.
4. Autoselect
The autoselect mode allows the reading out of a binary code from the devices and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the devices to be programmed with its corresponding programming algorithm. This mode is functional over the
entire temperature range of the devices.
To activate this mode, the programming equipment must force VID on address pin A9. Two identifier bytes may
then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All addresses are DON’T
CARES except A6, A3, A2, A1, A0 and (A-1) . (See “MBM29DL32TF/BF User Bus Operations Tables (BYTE = VIH
and BYTE = VIL)” in ■DEVICE BUS OPERATION.)
The manufacturer and device codes may also be read via the command register, for instances when the
MBM29DL32TF/BF are erased or programmed in a system without access to high voltage on the A9 pin. The
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MBM29DL32TF/BF-70
command sequence is illustrated in “MBM29DL32TF/BF Command Definitions Table” (■DEVICE BUS OPERATION). (Refer to “2. Autoselect Command” in ■COMMAND DIFINITIONS.)
In WORD mode, a read cycle from address 00h returns the manufacturer’s code (Fujitsu = 04h) . A read cycle
at address 01h outputs device code. When 227Eh is output, it indicates that two additional codes, called Extended
Device Codes will be required. Therefore the system may continue reading out these Extended Device Codes
at addresses of 0Eh and 0Fh. Notice that the above applies to WORD mode; the addresses and codes differ
from those of BYTE mode. (Refer to “MBM29DL32TF/BF Sector Group Protection Verify Autoselect Codes
Tables” and “MBM29DL32TF/BF Extended Autoselect Code Tables” in ■DEVICE BUS OPERATION.)
In the case of applying VID on A9, since both Bank 1 and Bank 2 enter Autoselect mode, simultanous operation
cannot be executed.
5. Read Mode
The MBM29DL32TF/BF have two control functions required to obtain data at the outputs. CE is the power control
and used for a device selection. OE is the output control and used to gate data to the output pins if a device is
selected.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time (tOE) is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after
power-up, input hardware reset or to change CE pin from “H” to “L”
6. Output Disable
With the OE input at a logic high level (VIH) , output from the devices are disabled. This will cause the output
pins to be in a high impedance state.
7. Write
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on the
falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to “■ AC WRITE CHARACTERISTICS” and Erase/Programming Waveforms for specific timing parameters.
8. Sector Group Protection
The MBM29DL32TF/BF feature hardware sector group protection. This feature will disable both program and
erase operations in any combination of twenty five sector groups of memory. (See “Sector Group Addresses
Tables (MBM29DL32TF/BF)” in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE) . The sector group protection
feature is enabled using programming equipment at the user’s site. The device is shipped with all sector groups
unprotected.
To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest
VID = 11.5 V) , CE = VIL and A6 = A3 = A2 = A0 = VIL, A1 = VIH. The sector group addresses (A20, A19, A18, A17, A16,
A15, A14, A13, and A12) should be set to the sector to be protected. “Sector Address Tables (MBM29DL32TF/BF)”
in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector address for each of the seventy one (71)
individual sectors, and “Sector Group Addresses Tables (MBM29DL32TF/BF)” in ■FLEXIBLE SECTOR-ERASE
ARCHITECTURE define the sector group address for each of the twenty five (25) individual group sectors.
Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the
rising edge of the same. Sector group addresses must be held constant during the WE pulse. See “15. Sector
Group Protection Timing Diagram” in ■TIMING DIAGRAM and “5. Sector Group Protection Algorithm” in ■FLOW
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MBM29DL32TF/BF-70
CHART for sector group protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
with CE and OE at VIL and WE at VIH. Scanning the sector group addresses (A20, A19, A18, A17, A16, A15, A14, A13,
and A12) while (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) will produce a logic “1” code at device output DQ0 for a protected
sector. Otherwise the device will produce “0” for unprotected sector. In this mode, the lower order addresses,
except for A6, A1, and A0 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect
manufacturer and device codes. A-1 requires to apply to VIL on byte mode.
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.
Performing a read operation at the address location XX02h, where the higher order addresses (A20, A19, A18,
A17, A16, A15, A14, A13, and A12) are the desired sector group address will produce a logic “1” at DQ0 for a protected
sector group. See “MBM29DL32TF/BF Sector Group Protection Verify Autoselect Codes Tables” and
“MBM29DL32TF/BF Extended Autoselect Code Tables” in ■DEVICE BUS OPERATION for Autoselect codes.
9. Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the MBM29DL32TF/BF
devices in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to
high voltage (VID) . During this mode, formerly protected sector groups can be programmed or erased by selecting
the sector group addresses. Once the VID is taken away from the RESET pin, all the previously protected sector
groups will be protected again. Refer to “16. Temporary Sector Group Unprotection Timing Diagram” in ■TIMING
DIAGRAM and “6. Temporary Sector Group Unprotection Algorithm” in ■FLOW CHART.
10. RESET
Hardware Reset
The MBM29DL32TF/BF devices may be reset by driving the RESET pin to VIL. The RESET pin has a pulse
requirement and has to be kept low (VIL) for at least “tRP” in order to properly reset the internal state machine.
Any operation in the process of being executed will be terminated and the internal state machine will be reset
to the read mode “tREADY” after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the
devices require an additional “tRH” before it will allow read access. When the RESET pin is low, the devices will
be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware
reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please
note that the RY/BY output signal should be ignored during the RESET pulse. See “11. RESET, RY/BY Timing
Diagram” in ■TIMING DIAGRAM for the timing diagram. Refer to “9. Temporary Sector Group Unprotection” for
additional functionality.
11. Byte/Word Configuration
The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29DL32TF/BF devices. When
this pin is driven high, the devices operate in the word (16-bit) mode. The data is read and programmed at DQ0
to DQ15. When this pin is driven low, the devices operate in byte (8-bit) mode. Under this mode, the DQ15/A-1 pin
becomes the lowest address bit and DQ14 to DQ8 bits are tri-stated. However, the command bus cycle is always
an 8-bit operation and hence commands are written at DQ7 to DQ0 and the DQ15 to DQ8 bits are ignored. Refer
to “12. Timing Diagram for Word Mode Configuration”, “13. Timing Diagram for Byte Mode Configuration” and
“14. BYTE Timing Diagram for Write Operations” in ■TIMING DIAGRAM for the timing diagram.
12. Boot Block Sector Protection
The Write Protection function provides a hardware method of protecting certain boot sectors without using VID.
This function is one of two provided by the WP/ACC pin.
If the system asserts VIL on the WP/ACC pin, the device disables program and erase functions in the two
“outermost” 8 K byte boot sectors (MBM29DL32TF : SA69 and SA70, MBM29DL32BF : SA0 and SA1) independently of whether those sectors were protected or unprotected using the method described in “Sector Group
Protection”. The two outermost 8 K byte boot sectors are the two sectors containing the lowest addresses in a
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MBM29DL32TF/BF-70
bottom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-configured
device.
If the system asserts VIH on the WP/ACC pin, the device reverts to whether the two outermost 8 K byte boot
sectors were last set to be protected or unprotected. That is, sector group protection or unprotection for these
two sectors depends on whether they were last protected or unprotected using the method described in “Sector
Group Protection”.
13. Accelerated Program Operation
MBM29DL32TF/BF offers accelerated program operation which enables the programming in high speed.
If the system asserts VACC to the WP/ACC pin, the device automatically enters the acceleration mode and the
time required for program operation will reduce to about 60%. This function is primarily intended to allow high
speed program, so caution is needed as the sector group will temporarily be unprotected.
The system would use a fact program command sequence when programming during acceleration mode.
Set command to fast mode and reset command from fast mode are not necessary. When the device enters the
acceleration mode, the device automatically set to fast mode. Therefore, the present sequence could be used
for programming and detection of completion during acceleration mode.
Removing VACC from the WP/ACC pin returns the device to normal operation. Do not remove VACC from WP/
ACC pin while programming. See “18. Accelerated Program Timing Diagram” in ■TIMING DIAGRAM.
Erase operation at Acceleration mode is strictly prohibited.
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MBM29DL32TF/BF-70
■ COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Some commands are required Bank Address (BA) input. When command sequences are inputted to bank being
read, the commands have priority than reading. “MBM29DL32TF/BF Command Definitions Table” in ■DEVICE
BUS OPERATION defines the valid register command sequences. Note that the Erase Suspend (B0h) and Erase
Resume (30h) commands are valid only while the Sector Erase operation is in progress. Also the Program
Suspend (B0h) and Program Resume (30h) commands are valid only while the Program operation is in progress.
Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please
note that commands are always written at DQ7 to DQ0 and DQ15 to DQ8 bits are ignored.
1. Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ5 = 1) to Read/Reset mode, the Read/
Reset operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Characteristics and waveforms for the specific timing parameters.
2. Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.
Following the command write, in WORD mode, a read cycle from address (BA) 00h returns the manufacturer’s
code (Fujitsu = 04h) . And a read cycle at address (BA) 01h outputs device code. When 227Eh was output, this
indicates that two additional codes, called Extended Device Codes will be required. Therefore the system may
continue reading out these Extended Device Codes at the address of (BA) 0Eh, as well as at (BA) 0Fh. Notice
that the above applies to WORD mode. The addresses and codes differ from those of BYTE mode. (Refer to
“MBM29DL32TF/BF Sector Group Protection Verify Autoselect Codes Tables” and “MBM29DL32TF/BF Extended Autoselect Code Tables” in ■DEVICE BUS OPERATION.)
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection
or unprotection) will be informed by address (BA) 02h for ×16 ( (BA) 04h for ×8). Scanning the sector group
addresses (A20, A19, A18, A17, A16, A15, A14, A13, and A12) while (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) will produce a
logic “1” at device output DQ0 for a protected sector group. The programming verification should be performed
by verify sector group protection on the protected sector. (See “MBM29DL32TF/BF Sector Group Protection
Verify Autoselect Codes Tables” and “MBM29DL32TF/BF Extended Autoselect Code Tables” in ■DEVICE BUS
OPERATION.)
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and
device codes and sector group protection status from non-selected bank, it is necessary to write Read/Reset
command sequence into the register and then Autoselect command should be written into the bank to be read.
If the software (program code) for Autoselect command is stored into the Flash memory, the device and manufacture codes should be read from the other bank where is not contain the software.
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence.
3. Byte/Word Programming
The devices are programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle
operation. There are two “unlock” write cycles. These are followed by the program set-up command and data
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MBM29DL32TF/BF-70
write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is
latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever
happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence,
the system is not required to provide further controls or timings. The device will automatically provide adequate
internally generated program pulses and verify the programmed cell margin.
The system can determine the status of the program operation by using DQ7 (Data Polling) , DQ6 (Toggle Bit) ,
or RY/BY. The Data Polling and Toggle Bit must be performed at the memory location which is being programmed.
The automatic programming operation is completed when the data on DQ7 is equivalent to data written to this
bit at which time the devices return to the read mode and addresses are no longer latched. (See “Hardware
Sequence Flags Table”.) Therefore, the devices require that a valid address to the devices be supplied by the
system at this particular instance. Hence, Data Polling must be performed at the memory location which is being
programmed.
If hardware reset occurs during the programming operation, it is impossible to guarantee the data being written.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success
according to the data polling algorithm but a read from Read/Reset mode will show that the data is still “0”. Only
erase operations can convert “0”s to “1”s.
“1. Embedded ProgramTM Algorithm” in ■FLOW CHART illustrates the Embedded ProgramTM Algorithm using
typical command strings and bus operations.
4. Program Suspend/Resume
The Program Suspend command allows the system to interrupt a program operation so that data can be read
from any address. Writing the Program Suspend command (B0h) during the embedded Program operation
immediately suspends the programming. The Program Suspend command may also be issued during a programming operation while an erase is suspended. The bank addresses of sector being programmed should be
set when writing the Program Suspend command.
When the Program Suspend command is written during a programming process, the device halts the program
operation within 1 µs and updates the status bits.
After the program operation has been suspended, the system can read data from any address. The data at
program-suspended address is not valid. Normal read timing and command definitions apply.
After the Program Resume command (30h) is written, the device reverts to programming. The bank addresses
of sectors being suspended should be set when writing the Program Resume command. The system can
determine the program operation status using the DQ7 or DQ6 status bits, just as in the standard program
operation. See “Write Operation Status” for more information.
The system also writes Autoselect command sequence in the Program Suspend mode. The device allows reading
autoselect codes at the addresses within programming sectors, since the codes are not stored in the mamory.
When the device exits from the Autoselect mode, the device reverts to the Program Suspend mode, and is ready
for another valid operation. See “Autoselect Command Sequence” for more information.
The system must write the Program Resume command (address bits are “Bank Address”) to exit from the
Program Suspend mode and continue programming operation. Further writes of the Resume command are
ignored. Another Program Suspend command can be written after the device resumes programming.
5. Chip Erase
Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase
Algorithm command sequence the devices will automatically program and verify the entire memory for an all
zero data pattern prior to electrical erase (Preprogram function) . The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ7 (Data Polling) , DQ6 (Toggle Bit) , or
RY/BY. The chip erase begins on the rising edge of the last CE or WE, whichever happens first in the command
sequence and terminates when the data on DQ7 is “1” (See Write Operation Status section.) at which time the
device returns to read the mode.
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MBM29DL32TF/BF-70
Chip Erase Time = Sector Erase Time × All sectors + Chip Program Time (Preprogramming)
“2. Embedded EraseTM Algorithm” in ■FLOW CHART illustrates the Embedded EraseTM Algorithm using typical
command strings and bus operations.
6. Sector Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of CE or WE whichever
happens later, while the command (Data = 30h) is latched on the rising edge of CE or WE which happens first.
After time-out of “tTOW” from the rising edge of the last sector erase command, the sector erase operation will begin.
Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29DL32TF/BF
Command Definitions Table” in ■DEVICE BUS OPERATION. This sequence is followed with writes of the Sector
Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must
be less than “tTOW” otherwise that command will not be accepted and erasure will start. It is recommended that
processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled
after the last Sector Erase command is written. A time-out of “tTOW” from the rising edge of last CE or WE whichever
happens first will initiate the execution of the Sector Erase command (s) . If another falling edge of CE or WE,
whichever happens first occurs within the “tTOW” time-out window the timer is reset. (Monitor DQ3 to determine
if the sector erase timer window is still open, see “16. DQ3 Sector Erase Timer”.) Resetting the devices once
execution has begun will corrupt the data in the sector. In that case, restart the erase on those sectors and allow
them to complete. (Refer to “12. Write Operation Status” for Sector Erase Timer operation.) Loading the sector
erase buffer may be done in any sequence and with any number of sectors (0 to 38) .
Sector erase does not require the user to program the devices prior to erase. The devices automatically program
all memory locations in the sector (s) to be erased prior to electrical erase (Preprogram function) . When erasing
a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ7 (Data Polling) , DQ6 (Toggle Bit) , or
RY/BY.
The sector erase begins after the “tTOW” time out from the rising edge of CE or WE whichever happens first for
the last sector erase command pulse and terminates when the data on DQ7 is “1” (See “12. Write Operation
Status”.) at which time the devices return to the read mode. Data polling and Toggle Bit must be performed at
an address within any of the sectors being erased.
Multiple Sector Erase Time = [Sector Erase Time + Sector Program Time (Preprogramming) ] × Number of
Sector Erase
In case of multiple sector erase across bank boundaries, a read from bank (read-while-erase) can not perform.
“2. Embedded EraseTM Algorithm” in ■FLOW CHART illustrates the Embedded EraseTM Algorithm using typical
command strings and bus operations.
7. Erase Suspend/Resume
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads
from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase
operation which includes the time-out period for sector erase. Writing the Erase Suspend command (B0h) during
the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase
operation.
Writing the Erase Resume command (30h) resumes the erase operation. The bank addresses of sector being
erasing or suspending should be set when writing the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of “tSPD” to suspend the erase operation. When the devices have entered the erase-suspended mode, the
RY/BY output pin will be at High-Z and the DQ7 bit will be at logic “1”, and DQ6 will stop toggling. The user must
use the address of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been
suspended. Further writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading
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MBM29DL32TF/BF-70
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ2 to toggle. (See “17. DQ2”.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate command sequence for Program. This program mode is known as the erase-suspend-program mode. Again, programming in this mode is the same as programming in the regular Program mode except that the data must be
programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erasesuspended Program operation is detected by the RY/BY output pin, Data polling of DQ7 or by the Toggle Bit I
(DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address
while DQ6 can be read from any address within bank being erase-suspended.
To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase
suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend
command can be written after the chip has resumed erasing.
8. Extended Command
(1) Fast Mode
MBM29DL32TF/BF has Fast Mode function. This mode dispenses with the initial two unclock cycles required
in the standard program command sequence by writing Fast Mode command into the command register. In this
mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program
command. The read operation is also executed after exiting this mode. During the Fast mode, do not write any
commands other than the Fast program/Fast mode reset command. To exit this mode, it is necessary to write
Fast Mode Reset command into the command register. The first cycle must contain the bank address. (Refer
to “8. Embedded ProgramTM Algorithm for Fast Mode” in ■FLOW CHART.) The VCC active current is required
even CE = VIH during Fast Mode.
(2) Fast Programming
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD) . (Refer to “8.
Embedded ProgramTM Algorithm for Fast Mode” in ■FLOW CHART.)
(3) Extended Sector Group Protection
In addition to normal sector group protection, the MBM29DL32TF/BF has Extended Sector Group Protection
as extended function. This function enables to protect sector group by forcing VID on RESET pin and write a
command sequence. Unlike conventional procedure, it is not necessary to force VID and control timing for control
pins. The extended sector group protection requires VID on RESET pin only. With this condition, the operation
is initiated by writing the set-up command (60h) into the command register. Then, the sector group addresses
pins (A20, A19, A18, A17, A16, A15, A14, A13 and A12) and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) should be set to the
sector group to be protected (recommend to set VIL for the other addresses pins) , and write extended sector
group protection command (60h) . A sector group is typically protected in 250 µs. To verify programming of the
protection circuitry, the sector group addresses pins (A20, A19, A18, A17, A16, A15, A14, A13 and A12) and (A6, A3, A2,
A1, A0) = (0, 0, 0, 1, 0) should be set and write a command (40h) . Following the command write, a logic “1” at
device output DQ0 will produce for protected sector in the read operation. If the output data is logic “0”, please
repeat to write extended sector group protection command (60h) again. To terminate the operation, it is necessary
to set RESET pin to VIH. (Refer to “17. Extended Sector Group Protection Timing Diagram” in ■TIMING DIAGRAM and “7. Extended Sector Group Protection Algorithm” in ■FLOW CHART.)
(4) Query (CFI : Common Flash Memory Interface)
The CFI (Common Flash Memory Interface) specification outlines device and host system software interrogation
handshake which allows specific vendor-specified software algorithms to be used for entire families of devices.
This allows device-independent, JEDEC ID-independent, and forward-and backward-compatible software support for the specified flash device families. Refer to Common Flash memory Interface code.
The operation is initiated by writing the query command (98h) into the command register. The bank address
should be set when writing this command. Then the device information can be read from the bank, and an actual
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MBM29DL32TF/BF-70
data of memory cell be read from the another bank. Following the command write, a read cycle from specific
address retrieves device information. Please note that output data of upper byte (DQ15 to DQ8) is “0” in word
mode (16 bit) read. Refer to the Common Flash memory Interface code table. To terminate operation, it is
necessary to write the read/reset command sequence into the register. (See “Common Flash Memory Interface
Code Table” in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE.)
9. HiddenROM Region
The HiddenROM feature provides a Flash memory region that the system may access through a new command
sequence. This is primarily intended for customers who wish to use an Electronic Serial Number (ESN) in the
device with the ESN protected against modification. Once the HiddenROM region is protected, any further
modification of that region is impossible. This ensures the security of the ESN once the product is shipped to
the field.
The HiddenROM region is 256 bytes in length and is stored at the same address of SA0 in Bank A. The
MBM29DL32TF occupies the address of the byte mode 3FE000h to 3FE0FFh (word mode 1FF000h to 1FF07Fh)
and the MBM29DL32BF type occupies the address of the byte mode 000000h to 0000FFh (word mode 000000h
to 00007Fh) . After the system has written the Enter HiddenROM command sequence, the system may read
the HiddenROM region by using the addresses normally occupied by the boot sectors. That is, the device sends
all commands that would normally be sent to the boot sectors to the HiddenROM region. This mode of operation
continues until the system issues the Exit HiddenROM command sequence, or until power is removed from the
device. On power-up, or following a hardware reset, the device reverts to sending commands to the boot sectors.
When reading the HiddenROM region, either change addresses or change CE pin from “H” to “L”. The same
procedure should be taken (changing addresses or CE pin from “H” to “L”) after the system issues the Exit
HiddenROM command sequence to read actual memory cell data.
10. HiddenROM Entry Command
The device has a HiddenROM area with one time protect function. This area is to enter the security code and
to unable the change of the code once set. Programming is allowed in this area until it is protected. However,
once it gets protected, it is impossible to unprotect. Therefore, extreme caution is required.
The HiddenROM area is 256 bytes. This area is normally the “outermost” 8 Kbyte boot block area in Bank 1.
Therefore, write the HiddenROM entry command sequence to enter the HiddenROM area. It is called HiddenROM mode when the HiddenROM area appears.
Sectors other than the boot block area SA0 can be read during HiddenROM mode. Read/program of the HiddenROM area is possible during HiddenROM mode. Write the HiddenROM reset command sequence to exit
the HiddenROM mode. The bank address of the HiddenROM should be set on the third cycle of this reset
command sequence.
In HiddenROM mode, the simultaneous operation cannot be executed multi-function mode between the HiddenROM area and the Bank A. Note that any other commands should not be issued other than the HiddenROM
program/protection/reset commands during the HiddenROM mode. When you issue the other commands including the suspend resume, send the HiddenROM reset command first to exit the HiddenROM mode and then
issue each command.
11. HiddenROM Program Command
To program the data to the HiddenROM area, write the HiddenROM program command sequence during HiddenROM mode. This command is the same as the usual program command, except that it needs to write the
command during HiddenROM mode. Therefore the detection of completion method is the same as in the past,
using the DQ7 data pooling, DQ6 toggle bit and RY/BY pin. You should pay attention to the address to be
programmed. If an address not in the HiddenROM area is selected, the previous data will be deleted. During
the write into the HiddenROM region, the program suspend command issuance is prohibited.
12. HiddenROM Protect Command
There are two methods to protect the HiddenROM area. One is to write the sector group protect setup command
(60h) , set the sector address in the HiddenROM area and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) , and write the
sector group protect command (60h) during the HiddenROM mode. The same command sequence may be used
because it is the same as the extension sector group protect in the past, except that it is in the HiddenROM
34
MBM29DL32TF/BF-70
mode and does not apply high voltage to the RESET pin. Please refer to “7. Extended Command (3) Extended
Sector Group Protection” for details of extension sector group protect setting.
The other method is to apply high voltage (VID) to A9 and OE, set the sector address in the HiddenROM area
and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) , and apply the write pulse during the HiddenROM mode. To verify the
protect circuit, apply high voltage (VID) to A9, specify (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) and the sector address
in the HiddenROM area, and read. When “1” appears on DQ0, the protect setting is completed. “0” will appear
on DQ0 if it is not protected. Apply write pulse again. The same command sequence could be used for the above
method because other than the HiddenROM mode, it is the same as the sector group protect previously mentioned. Refer to “8. Secor Group Protection” in ■FUNCTIONAL DESCRIPTION for details of the sector group
protect setting.
Take note that other sector groups will be affected if an address other than those for the HiddenROM area is
selected for the sector group address, so please be careful. Pay close attention that once it is protected, protection
CANNOT BE CANCELLED.
13. Write Operation Status
Detailed in “Hardware Sequence Flags Table” are all the status flags that can determine the status of the bank
for the current mode operation. The read operation from the bank that does not operate Embedded Algorithm
returns a data of memory cell. These bits offer a method for determining whether a Embedded Algorithm is
completed properly. The information on DQ2 is address sensitive. This means that if an address from an erasing
sector is consecutively read, then the DQ2 bit will toggle. However, DQ2 will not toggle if an address from a nonerasing sector is consecutively read. This allows the user to determine which sectors are erasing and which are
not.
The status flag is not output from bank (non-busy bank) not executing Embedded Algorithm. For example, there
is bank (busy bank) which is now executing Embedded Algorithm. When the read sequence is [1] <busy bank>,
[2] <non-busy bank>, [3] <busy bank>, the DQ6 is toggling in the case of [1] and [3]. In case of [2], the data of
memory cell is outputted. In the erase-suspend read mode with the same read sequence, DQ6 will not be toggled
in the [1] and [3].
In the erase suspend read mode, DQ2 is toggled in the [1] and [3]. In case of [2], the data of memory cell is
outputted.
Hardware Sequence Flags Table
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase Suspend Read
(Erase Suspended Sector)
Erase
Erase Suspend Read
Suspended
(Non-Erase Suspended Sector)
In Progress Mode
Erase Suspend Program
(Non-Erase Suspended Sector)
Program Suspend Read
Program
(Program Suspended Sector)
Suspended
Program Suspend Read
Mode
(Non-Program Suspended Sector)
Embedded Program Algorithm
Embedded Erase Algorithm
Exceeded
Time Limits Erase
Erase Suspend Program
Suspended
(Non-Erase Suspended Sector)
Mode
DQ7
DQ6
DQ5
DQ3
DQ2
DQ7
Toggle
0
0
1
0
Toggle
0
1
Toggle *1
1
1
0
0
Toggle
Data
Data
Data
Data
Data
DQ7
Toggle
0
0
1 *2
Data
Data
Data
Data
Data
Data
Data
Data
Data
Data
DQ7
Toggle
1
0
1
0
Toggle
1
1
N/A
DQ7
Toggle
1
0
N/A
35
MBM29DL32TF/BF-70
*1: Successive reads from the erasing or erase-suspend sector will cause DQ2 to toggle.
*2: Reading from non-erase suspend sector address will indicate logic “1” at the DQ2 bit.
14. DQ7
Data Polling
The device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in
progress or completed. During the Embedded Program Algorithm an attempt to read the devices will produce
the complement of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt
to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an
attempt to read the device will produce a “0” at the DQ7 output. Upon completion of the Embedded Erase Algorithm
an attempt to read the device will produce a “1” at the DQ7 output. The flowchart for Data Polling (DQ7) is shown
in “3. Data Polling Algorithm” in ■FLOW CHART.
For programming, the Data Polling is valid after the rising edge of fourth write pulse in the four write pulse
sequence.
For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth write pulse in the six
write pulse sequence. Data Polling must be performed at sector address within any of the sectors being erased
and not a protected sector. Otherwise the status may not be valid.
If a program address falls within a protected sector, Data Polling on DQ7 is active for approximately 1 µs, then
that bank returns to the read mode. After an erase command sequence is written, if all sectors selected for
erasing are protected, Data Polling on DQ7 is active for approximately 400 µs, then the bank returns to read mode.
Once the Embedded Algorithm operation is close to being completed, the MBM29DL32TF/BF data pins (DQ7)
may change asynchronously while the output enable (OE) is asserted low. This means that the devices are
driving status information on DQ7 at one instant of time and then that byte’s valid data at the next instant of time.
Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device
has completed the Embedded Algorithm operation and DQ7 has a valid data, the data outputs on DQ6 to DQ0
may be still invalid. The valid data on DQ7 to DQ0 will be read on the successive read attempts.
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm
or sector erase time-out. (See “Hardware Sequence Flags Table”.)
See “6. Data Polling during Embedded Algorithm Operation Timing Diagram” in ■TIMING DIAGRAM for the
Data Polling timing specifications and diagrams.
15. DQ6
Toggle Bit I
The device also features the “Toggle Bit I” as a method to indicate to the host system that the Embedded
Algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from
the devices will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm
cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During
programming, the Toggle Bit I is valid after the rising edge of the fourth write pulse in the four write pulse sequence.
For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth write pulse in the six
write pulse sequence. The Toggle Bit I is active during the sector time out.
In programming, if the sector being written to is protected, the toggle bit will toggle for about 1 µs and then stop
toggling without the data having changed. In erase, the devices will erase all the selected sectors except for the
ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 400 µs
and then drop back into read mode, having changed none of the data.
Either CE or OE toggling will cause the DQ6 to toggle.
The system can use DQ6 to determine whether a sector is actively erasing or is erase-suspended. When a bank
is actively erasing (that is, the Embedded Erase Algorithm is in progress) , DQ6 toggles. When a bank enters
the Erase Suspend mode, DQ6 stops toggling. Successive read cycles during the erase-suspend-program cause
DQ6 to toggle.
To operate toggle bit function properly, CE or OE must be high when bank address is changed.
36
MBM29DL32TF/BF-70
See “7. Toggle Bit I during Embedded Algorithm Operation Timing Diagram” in ■TIMING DIAGRAM for the
Toggle Bit I timing specifications and diagrams.
16. DQ5
Exceeded Timing Limits
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count) . Under
these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase
cycle was not successfully completed. Data Polling is the only operating function of the devices under this
condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA) .
The OE and WE pins will control the output disable functions as described in “MBM29DL32TF/BF User Bus
Operations Tables (BYTE = VIH and BYTE = VIL)” (■DEVICE BUS OPERATION).
The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this
case the devices lock out and never complete the Embedded Algorithm operation. Hence the system never
reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the devices have exceeded timing limits, the
DQ5 bit will indicate a “1.” Please note that this is not a device failure condition since the devices were incorrectly
used. If this occurs, reset the device with command sequence.
17. DQ3
Sector Erase Timer
After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will
remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase
command sequence.
If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command, DQ3 may
be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled
erase cycle has begun. If DQ3 is low (“0”) , the device will accept additional sector erase commands. To insure
the command has been accepted, the system software should check the status of DQ3 prior to and following
each subsequent Sector Erase command. If DQ3 were high on the second status check, the command may not
have been accepted.
See “Hardware Sequence Flags Table”.
18. DQ2
Toggle Bit II
This toggle bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ2 to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte
address of the non-erase suspended sector will indicate a logic “1” at the DQ2 bit.
DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend
Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized
as follows :
For example DQ2 and DQ6 can be used together to determine if the erase-suspend-read mode is in progress.
(DQ2 toggles while DQ6 does not.) See also “Toggle Bit Status Table” and “9. DQ2 vs. DQ6” in ■TIMING DIAGRAM.
Furthermore DQ2 can also be used to determine which sector is being erased. When the device is in the erase
mode, DQ2 toggles if this bit is read from an erasing sector.
To operate toggle bit function properly, CE or OE must be high when bank address is changed.
19. Reading Toggle Bits DQ6/DQ2
Whenever the system initially begins reading toggle bit status, it must read DQ7 to DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically a system would note and store the value of the toggle bit
after the first read. After the second read, the system would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7 to DQ0 on the following read cycle.
However, after the initial two read cycles, if the system determines that the toggle bit is still toggling, the system
37
MBM29DL32TF/BF-70
also should note whether the value of DQ5 is high (see “15. DQ5”) . If it is, the system should then determine
again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high.
If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If
it is still toggling, the device did not complete the operation successfully, and the system must write the reset
command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively it may choose to perform other system
tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the
status of the operation. (Refer to “4. Toggle Bit Algorithm” in ■FLOW CHART.)
Toggle Bit Status Table
DQ7
DQ6
DQ2
DQ7
Toggle
1
Erase
0
Toggle
Toggle *1
Erase-Suspend Read
(Erase-Suspended Sector)
1
1
Toggle
DQ7
Toggle
1 *2
Mode
Program
Erase-Suspend Program
*1 : Successive reads from the erasing or erase-suspend sector cause DQ2 to toggle.
*2 : Reading from non-erase suspend sector address indicates logic “1” at the DQ2 bit.
20. RY/BY
Ready/Busy
The MBM29DL32TF/BF provide a RY/BY open-drain output pin as a way to indicate to the host system that the
Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy
with either a program or erase operation. If the output is high, the devices are ready to accept any read/program
or erase operation. If the MBM29DL32TF/BF are placed in an Erase Suspend mode, the RY/BY output will be
high.
During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth write pulse. The RY/BY pin will indicate
a busy condition during the RESET pulse. Refer to “10. RY/BY Timing Diagram during Program/Erase Operations” and “11. RESET, RY/BY Timing Diagram” in ■TIMING DIAGRAM for a detailed timing diagram. The RY/
BY pin is pulled high in standby mode.
Since this is an open-drain output, the pull-up resistor needs to be connected to VCC ; multiple of devices may
be connected to the host system via more than one RY/BY pin in parallel.
21. Data Protection
The MBM29DL32TF/BF are designed to offer protection against accidental erasure or programming caused by
spurious system level signals that may exist during power transitions. During power up the devices automatically
reset the internal state machine in the Read mode. Also, with its control register architecture, alteration of the
memory contents only occurs after successful completion of specific multi-bus cycle command sequences.
The devices also incorporate several features to prevent inadvertent write cycles resulting form VCC power-up
and power-down transitions or system noise.
22. Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less
than VLKO. If VCC < VLKO, the command register is disabled and all internal program/erase circuits are disabled.
Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the VCC level
is greater than VLKO. It is the users responsibility to ensure that the control pins are logically correct to prevent
38
MBM29DL32TF/BF-70
unintentional writes when VCC is above VLKO.
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector (s) cannot be used.
23. Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE, CE, or WE will not initiate a write cycle.
24. Logical Inhibit
Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE
must be a logic zero while OE is a logic one.
25. Power-Up Write Inhibit
Power-up of the devices with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the read mode on power-up.
26. Sector Group Protection
Device user is able to protect each sector group individually to store and protect data. Protection circuit voids
both program and erase commands that are addressed to protected sectors. Any commands to program or
erase addressed to protected sector are ignored. (See “8. Sector Group Protection” in ■ FUNCTIONAL DESCRIPTION.)
39
MBM29DL32TF/BF-70
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Min
Max
Tstg
−55
+125
°C
TA
−40
+85
°C
VIN, VOUT
−0.5
VCC + 0.5
V
Power Supply Voltage *1
VCC
−0.5
+4.0
V
A9, OE, and RESET *1,*3
VIN
−0.5
+13.0
V
1, 4
VACC
−0.5
+10.5
V
Storage Temperature
Ambient Temperature with Power Applied
Voltage with Respect to Ground All pins except A9,
OE, RESET *1,*2
WP/ACC * *
*1: Voltage is defined on the basis of VSS = GND = 0 V.
*2: Minimum DC voltage on input or I/O pins is −0.5 V. During voltage transitions, input or I/O pins may undershoot
VSS to −2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC + 0.5 V. During voltage
transitions, input or I/O pins may overshoot to VCC + 2.0 V for periods of up to 20 ns.
*3: Minimum DC input voltage on A9, OE and RESET pins is −0.5 V. During voltage transitions, A9, OE and RESET
pins may undershoot VSS to −2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage
(VIN - VCC) does not exceed +9.0 V. Maximum DC input voltage on A9, OE and RESET pins is +13.0 V which may
overshoot to +14.0 V for periods of up to 20 ns.
*4: Minimum DC input voltage on WP/ACC pin is −0.5 V. During voltage transitions, WP/ACC pin may undershoot
VSS to −2.0 V for periods of up to 20 ns. Maximum DC input voltage on WP/ACC pin is +10.5 V which may
overshoot to +12.0 V for periods of up to 20 ns when VCC is applied.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Part No.
Value
Min
Max
Unit
Ambient Temperatuer
TA
MBM29DL32TF/BF-70
−40
+85
°C
Power Supply Voltage*
VCC
MBM29DL32TF/BF-70
+2.7
+3.6
V
* : Voltage is defined on the basis of VSS = GND = 0 V.
Note : Operating ranges define those limits between which the functionality of the devices are guaranteed.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
40
MBM29DL32TF/BF-70
■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT
+0.6 V
20 ns
20 ns
−0.5 V
−2.0 V
20 ns
Maximum Undershoot Waveform
20 ns
VCC + 2.0 V
VCC + 0.5 V
+2.0 V
20 ns
20 ns
Maximum Overshoot Waveform 1
20 ns
+14.0 V
+13.0 V
VCC + 0.5 V
20 ns
20 ns
Note : This waveform is applied for A9, OE, and RESET.
Maximum Overshoot Waveform 2
41
MBM29DL32TF/BF-70
■ DC CHARACTERISTICS
Symbol
Conditions
Input Leakage Current
ILI
Output Leakage Current
Parameter
Value
Typ
Max
VIN = VSS to VCC, VCC = VCC Max
−1.0

+1.0
µA
ILO
VOUT = VSS to VCC, VCC = VCC Max
−1.0

+1.0
µA
A9, OE, RESET Inputs Leakage
Current
ILIT
VCC = VCC Max,
A9, OE, RESET = 12.5 V


35
µA
WP/ACC Accelerated Program Current
ILIA
VCC = VCC Max,
WP/ACC = VACC Max


20
mA

16

18

4

4
VCC Active Current *
1
ICC1
CE = VIL, OE = VIH,
f = 5 MHz
CE = VIL, OE = VIH,
f = 1 MHz
Byte
Word
Byte
Word


mA
mA
VCC Active Current *2
ICC2
CE = VIL, OE = VIH


30
mA
VCC Current (Standby)
ICC3
VCC = VCC Max, CE = VCC ± 0.3 V,
RESET = VCC ± 0.3 V,
WP/ACC = VCC ± 0.3 V

1
5
µA
VCC Current (Standby, Reset)
ICC4
VCC = VCC Max,
RESET = VSS ± 0.3 V

1
5
µA
VCC Current
(Automatic Sleep Mode) *5
ICC5
VCC = VCC Max, CE = VSS ± 0.3 V,
RESET = VCC ± 0.3 V,
VIN = VCC ± 0.3 V or VSS ± 0.3 V

1
5
µA
VCC Active Current *6
(Read-While-Program)
ICC6
CE = VIL, OE = VIH
Byte


46
Word


48
VCC Active Current *6
(Read-While-Erase)
ICC7
CE = VIL, OE = VIH
Byte


46
Word


48
VCC Active Current
(Erase-Suspend-Program)
ICC8
CE = VIL, OE = VIH


35
mA
mA
mA
Input Low Voltage
VIL

−0.5

+0.6
V
Input High Voltage
VIH

2.0

VCC + 0.3
V
Voltage for Autoselect and Sector
Protection (A9, OE, RESET) *3, *4
VID

11.5
12
12.5
V

8.5
9.0
9.5
V


0.45
V
2.4


V
VCC − 0.4


V
2.3
2.4
2.5
V
Voltage for WP/ACC Sector Protection/
VACC
Unprotection and Program Acceleration
Output Low Voltage
Output High Voltage
Low VCC Lock-Out Voltage
VOL
IOL = 4.0 mA, VCC = VCC Min
VOH1 IOH = −2.0 mA, VCC = VCC Min
VOH2 IOH = −100 µA
VLKO

*1 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*2 : ICC active while Embedded Algorithm (program or erase) is in progress.
*3 : This timing is only for Sector Group Protection operation and Autoselect mode.
*4 : Applicable for only VCC.
*5 : Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*6 : Embedded Algorithm (program or erase) is in progress (@5 MHz) .
42
Unit
Min
MBM29DL32TF/BF-70
■ AC CHARACTERISTICS
• Read Only Operations Characteristics
Symbol
Value *
JEDEC
Standard
Test
setup
Read Cycle Time
tAVAV
tRC

70

ns
Address to Output Delay
tAVQV
tACC
CE = VIL
OE = VIL

70
ns
Chip Enable to Output Delay
tELQV
tCE
OE = VIL

70
ns
Output Enable to Output Delay
tGLQV
tOE


30
ns
Chip Enable to Output High-Z
tEHQZ
tDF


25
ns
Output Enable to Output High-Z
tGHQZ
tDF


25
ns
Output Hold Time from Addresses,
CE or OE, Whichever Occurs First
tAXQX
tOH

0

ns
RESET Pin Low to Read Mode

tREADY


20
µs
CE to BYTE Switching Low or High

tELFL,
tELFH


5
ns
Parameter
Min
Max
Unit
* : Test Conditions :
Output Load : 30 pF (MBM29DL32TF/BF-70)
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or VCC
Timing measurement reference level
Input : 0.5 × VCC
Output : 0.5 × VCC
3.3 V
Diode = 1N3064
or Equivalent
Device
Under
Test
2.7 kΩ
6.2 kΩ
Diode = 1N3064
or Equivalent
CL
Notes : CL = 30 pF including jig capacitance (MBM29DL32TF-70, MBM29DL32BF-70)
Test Conditions
43
MBM29DL32TF/BF-70
• Write/Erase/Program Operations
Symbol
Parameter
Value
Unit
JEDEC
Standard
Min
Typ
Max
Write Cycle Time
tAVAV
tWC
70


ns
Address Setup Time
tAVWL
tAS
0


ns

tASO
12


ns
tWLAX
tAH
45


ns

tAHT
0


ns
Data Setup Time
tDVWH
tDS
30


ns
Data Hold Time
tWHDX
tDH
0


ns

tOEH
0


ns
10


ns
CE High During Toggle Bit Polling

tCEPH
20


ns
OE High During Toggle Bit Polling

tOEPH
20


ns
Read Recover Time Before Write
tGHWL
tGHWL
0


ns
Read Recover Time Before Write
tGHEL
tGHEL
0


ns
CE Setup Time
tELWL
tCS
0


ns
WE Setup Time
tWLEL
tWS
0


ns
CE Hold Time
tWHEH
tCH
0


ns
WE Hold Time
tEHWH
tWH
0


ns
Write Pulse Width
tWLWH
tWP
35


ns
CE Pulse Width
tELEH
tCP
35


ns
Write Pulse Width High
tWHWL
tWPH
25


ns
CE Pulse Width High
tEHEL
tCPH
25


ns
tWHWH1
tWHWH1

4

µs

6

µs
tWHWH2
tWHWH2

0.5

s
VCC Setup Time

tVCS
50


µs
Rise Time to VID *2

tVIDR
500


ns

tVACCR
500


ns

tVLHT
4


µs

tWPP
100


µs

tOESP
4


µs
Address Setup Time to OE Low During Toggle Bit Polling
Address Hold Time
Address Hold Time from CE or OE High During Toggle Bit
Polling
Output Enable Hold
Time
Read
Toggle and Data Polling
Byte
Programming
Operation
Word
Sector Erase Operation *
1
Rise Time to VACC *3
Voltage Transition Time *
Write Pulse Width *
2
2
OE Setup Time to WE Active *2
(Continued)
44
MBM29DL32TF/BF-70
(Continued)
Symbol
Parameter
Value
Unit
JEDEC
Standard
Min
Typ
Max
CE Setup Time to WE Active *2

tCSP
4


µs
Recover Time from RY/BY

tRB
0


ns
RESET Pulse Width

tRP
500


ns
RESET High Level Period before Read

tRH
200


ns
BYTE Switching Low to Output High-Z

tFLQZ


25
ns
BYTE Switching High to Output Active

tFHQV


70
ns
Program/Erase Valid to RY/BY Delay

tBUSY


90
ns
Delay Time from Embedded Output Enable

tEOE


70
ns
Erase Time-Out Time

tTOW
50


µs
Erase Suspend Transition Time

tSPD


20
µs
*1: Does not include the preprogramming time.
*2: For Sector Group Protection operation.
*3: This timing is limited for Accelerated Program operation only.
45
MBM29DL32TF/BF-70
■ ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Unit
Min
Typ
Max
Sector Erase Time

0.5
2.0
s
Word Programming Time

6.0
100
µs
Byte Programming Time

4.0
80
µs
Chip Programming Time

12.6
50
s
100,000


cycle
Program/Erase Cycle
Comments
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead

Notes : • Typical Erase conditions TA = +25 °C, Vcc = 2.9 V
• Typical Program conditions TA = +25 °C, Vcc = 2.9 V, Data = checker
■ TSOP (1) PIN CAPACITANCE
Parameter
Input Capacitance
Symbol
CIN
Condition
Value
Unit
Typ
Max
VIN = 0
6.0
10.0
pF
Output Capacitance
COUT
VOUT = 0
8.5
12.0
pF
Control Pin Capacitance
CIN2
VIN = 0
8.0
11.0
pF
WP/ACC Pin Capacitance
CIN3
VIN = 0
9.0
12.0
pF
Notes : • Test conditions TA = +25 °C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
■ FBGA PIN CAPACITANCE
Parameter
Input Capacitance
Symbol
CIN
Condition
Unit
Typ
Max
VIN = 0
6.0
10.0
pF
Output Capacitance
COUT
VOUT = 0
8.5
12.0
pF
Control Pin Capacitance
CIN2
VIN = 0
8.0
11.0
pF
WP/ACC Pin Capacitance
CIN3
VIN = 0
9.0
12.0
pF
Notes : • Test conditions TA = +25 °C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
46
Value
MBM29DL32TF/BF-70
■ TIMING DIAGRAM
• Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Must Be
Steady
Will Be
Steady
May
Change
from H to L
Will
Change
from H to L
May
Change
from L to H
Will
Change
from L to H
"H" or "L"
Any Change
Permitted
Changing
State
Unknown
Does Not
Apply
Center Line is
HighImpedance
"Off" State
1. Read Operation Timing Diagram
tRC
Address
Address Stable
tACC
CE
tOE
tDF
OE
tOEH
WE
tCE
High-Z
Outputs
tOH
Output Valid
High-Z
47
MBM29DL32TF/BF-70
2. Hardware Reset/Read Operation Timing Diagram
tRC
Address
Address Stable
tACC
CE
tRH
tRP
tRH
tCE
RESET
tOH
High-Z
Outputs
Output Valid
3. Alternate WE Controlled Program Operation Timing Diagram
3rd Bus Cycle
Data Polling
555h
Address
PA
tWC
tAS
PA
tRC
tAH
CE
tCS
tCH
tCE
OE
tGHWL
tWP
tOE
tWPH
tWHWH1
WE
tDS
Data
A0h
tOH
tDF
tDH
PD
DQ7
DOUT
DOUT
Notes : • PA is address of the memory location to be programmed.
• PD is data to be programmed at byte address.
• DQ7 is the output of the complement of the data written to the device.
• DOUT is the output of the data written to the device.
• Figure indicates the last two bus cycles out of four bus cycle sequence.
• These waveforms are for the ×16 mode. The addresses differ from ×8 mode.
48
MBM29DL32TF/BF-70
4. Alternate CE Controlled Program Operation Timing Diagram
3rd Bus Cycle
Data Polling
555h
Address
PA
tWC
tAS
PA
tAH
WE
tWS
tWH
OE
tGHEL
tCP
tCPH
tWHWH1
CE
tDS
tDH
Data
A0h
PD
DQ7
DOUT
Notes : • PA is address of the memory location to be programmed.
• PD is data to be programmed at byte address.
• DQ7 is the output of the complement of the data written to the device.
• DOUT is the output of the data written to the device.
• Figure indicates the last two bus cycles out of four bus cycle sequence.
• These waveforms are for the ×16 mode. The addresses differ from ×8 mode.
49
MBM29DL32TF/BF-70
5. Chip/Sector Erase Operation Timing Diagram
555h
Address
2AAh
tWC
tAS
555h
555h
SA*
2AAh
tAH
CE
tCS
tCH
OE
tGHWL
tWP
tWPH
WE
tDS
tDH
AAh
10h for Chip Erase
55h
80h
AAh
55h
Data
tVCS
VCC
* : SA is the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase.
Note : These waveforms are for the ×16 mode. The addresses differ from ×8 mode.
50
10h/
30h
MBM29DL32TF/BF-70
6. Data Polling during Embedded Algorithm Operation Timing Diagram
CE
tCH
tDF
tOE
OE
tOEH
WE
tCE
*
Data
DQ7
DQ7 =
Valid Data
DQ7
High-Z
tWHWH1 or tWHWH2
DQ6 to DQ0
DQ6 to DQ0 =
Output Flag
Data
DQ6 to DQ0
Valid Data
High-Z
tEOE
tBUSY
RY/BY
* : DQ7 = Valid Data (the device has completed the Embedded operation.)
7. Toggle Bit I during Embedded Algorithm Operation Timing Diagram
Address
tAHT tASO
tAHT tAS
CE
tCEPH
WE
tOEH
tOEPH
tOEH
OE
tDH
DQ6/DQ2
tOE
tCE
Toggle
Data
Data
Toggle
Data
Toggle
Data
*
Stop
Toggling
Output
Valid
tBUSY
RY/BY
* : DQ6 stops toggling (the device has completed the Embedded operation) .
51
MBM29DL32TF/BF-70
8. Bank-to-Bank Read/Write Timing Diagram
Address
Read
tRC
Command
tWC
Read
tRC
Command
tWC
Read
tRC
Read
tRC
BA1
BA2
(555h)
BA1
BA2
(PA)
BA1
BA2
(PA)
tAS
tACC
tAH
tAS
tAHT
tCE
CE
tCEPH
tOE
OE
tGHWL
tOEH
tWP
tDF
WE
tDH
tDS
Valid
Output
DQ
Valid
Input
tDF
Valid
Output
(A0h)
Valid
Input
Valid
Output
Status
(PD)
Note : This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2.
BA1 : Address corresponding to Bank 1
BA2 : Address corresponding to Bank 2
9. DQ2 vs. DQ6
Enter
Embedded
Erasing
WE
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
DQ6
DQ2*
Toggle
DQ2 and DQ6
with OE or CE
* : DQ2 is read from the erase-suspended sector.
52
Erase
Erase
Complete
MBM29DL32TF/BF-70
10. RY/BY Timing Diagram during Program/Erase Operations
CE
Rising edge of the last write pulse
WE
Entire programming
or erase operations
RY/BY
tBUSY
11. RESET, RY/BY Timing Diagram
WE
RESET
tRB
tRP
RY/BY
tREADY
12. Timing Diagram for Word Mode Configuration
CE
tCE
BYTE
Data Output
(DQ7 to DQ0)
DQ14 to DQ0
tELFH
DQ15/A-1
Data Output
(DQ14 to DQ0)
tFHQV
A-1
DQ15
53
MBM29DL32TF/BF-70
13. Timing Diagram for Byte Mode Configuration
CE
BYTE
DQ14 to DQ0
tELFL
Data Output
(DQ14 to DQ0)
Data Output
(DQ7 to DQ0)
tACC
DQ15/A-1
A-1
DQ15
tFLQZ
14. BYTE Timing Diagram for Write Operations
Falling edge of the last write pulse
CE or WE
Input
Valid
BYTE
tAH
tAS
54
MBM29DL32TF/BF-70
15. Sector Group Protection Timing Diagram
A20, A19, A18
A17, A16, A15
A14, A13, A12
SPAX
SPAY
A6, A3, A2, A0
A1
VID
VIH
A9
tVLHT
VID
VIH
OE
tVLHT
tVLHT
tVLHT
tWPP
WE
tOESP
tCSP
CE
01h
Data
tVCS
tOE
VCC
SPAX : Sector Group Address to be protected
SPAY : Next Sector Address to be protected
Note : A-1 is VIL on byte mode.
55
MBM29DL32TF/BF-70
16. Temporary Sector Group Unprotection Timing Diagram
VCC
tVIDR
tVLHT
tVCS
VID
VIH
RESET
CE
WE
tVLHT
Program or Erase
Command Sequence
RY/BY
Unprotection Period
56
tVLHT
MBM29DL32TF/BF-70
17. Extended Sector Group Protection Timing Diagram
VCC
tVCS
RESET
tVLHT
tVIDR
tWC
Address
tWC
SPAX
SPAX
SPAY
A6, A3,
A2, A0
A1
CE
OE
TIME-OUT
tWP
WE
Data
60h
60h
40h
01h
60h
tOE
SPAX
: Sector Group Address to be protected
SPAY
: Next Sector Group Address to be protected
TIME-OUT : Time-Out window = 250 µs (Min)
Note : A−1 is VIL on byte mode.
57
MBM29DL32TF/BF-70
18. Accelerated Program Timing Diagram
VCC
tVACCR
tVLHT
tVCS
VACC
VIH
WP/ACC
CE
WE
tVLHT
tVLHT
Program Command Sequence
RY/BY
Acceleration Period
58
MBM29DL32TF/BF-70
■ FLOW CHART
1. Embedded ProgramTM Algorithm
EMBEDDED ALGORITHMS
Start
Write Program
Command Sequence
(See Below)
Data Polling Device
No
Increment Address
Verify Data
?
Yes
No
Embedded
Program
Algorithm
in progress
Last Address
?
Yes
Programming Completed
Program Command Sequence (Address/Command) :
555h/AAh
2AAh/55h
555h/A0h
Program Address/Program Data
Notes : • The sequence is applied for × 16 mode.
• The addresses differ from × 8 mode.
59
MBM29DL32TF/BF-70
2. Embedded EraseTM Algorithm
EMBEDDED ALGORITHMS
Start
Write Erase
Command Sequence
(See Below)
Data Polling
No
Data = FFh
?
Yes
Embedded
Erase
Algorithm
in progress
Erasure Completed
Chip Erase Command Sequence
(Address/Command) :
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command) :
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/80h
555h/80h
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/10h
Sector Address
/30h
Sector Address
/30h
Sector Address
/30h
Notes : • The sequence is applied for × 16 mode.
• The addresses differ from × 8 mode.
60
Additional sector
erase commands
are optional.
MBM29DL32TF/BF-70
3. Data Polling Algorithm
VA = Address for programming
= Any of the sector addresses
within the sector being erased
during sector erase or multiple sector
erases operation.
= Any of the sector addresses
within the sector not being
protected during chip erase operation.
Start
Read Byte
(DQ7 to DQ0)
Addr. = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read Byte
(DQ7 to DQ0)
Addr. = VA
DQ7 = Data?
*
No
Fail
Yes
Pass
* : DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
61
MBM29DL32TF/BF-70
4. Toggle Bit Algorithm
Start
VA = Bank address being executed
Embedded Algorithm.
Read DQ7 to DQ0
Addr. = VA
*1
Read DQ7 to DQ0
Addr. = VA
DQ6
= Toggle?
No
Yes
No
DQ5 = 1?
Yes
*1, *2
Read DQ7 to DQ0
Addr. = VA
*1, *2
Read DQ7 to DQ0
Addr. = VA
DQ6
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation
Complete
*1 : Read toggle bit twice to determine whether it is toggling.
*2 : Recheck toggle bit because it may stop toggling as DQ5 changes to “1”.
62
MBM29DL32TF/BF-70
5. Sector Group Protection Algorithm
Start
(
Setup Sector Group Addr.
A20, A19, A18, A17,A16,
A15, A14, A13, A12
)
PLSCNT = 1
OE = VID, A9 = VID
CE = VIL, RESET = VIH
A6 = A3 = A2 = A0 = VIL, A1 = VIH
Activate WE Pulse
Increment PLSCNT
Time out 100 µs
WE = VIH, CE = OE = VIL
(A9 should remain VID)
Read from Sector Group
= SPA, A1 = VIH *
( AAddr.
6 = A3 = A2 = A0 = VIL )
No
PLSCNT = 25?
Yes
Remove VID from A9
Write Reset Command
No
Data = 01h?
Yes
Protect Another Sector
Group ?
Yes
No
Device Failed
Remove VID from A9
Write Reset Command
Sector Group Protection
Completed
* : A-1 is VIL in byte mode.
63
MBM29DL32TF/BF-70
6. Temporary Sector Group Unprotection Algorithm
Start
RESET = VID
*1
Perform Erase or
Program Operations
RESET = VIH
Temporary Sector Group
Unprotection Completed
*2
*1 : All protected sector groups are unprotected.
*2 : All previously protected sector groups are reprotected.
64
MBM29DL32TF/BF-70
7. Extended Sector Group Protection Algorithm
Start
RESET = VID
Wait to 4 µs
Device is Operating in
Temporary Sector Group
Unprotection Mode
No
Extended Sector Group
Protection Entry?
Yes
To Setup Sector Group Protection
Write XXXh/60h
PLSCNT = 1
To Protect Secter Group
Write 60h to Secter Address
(A6 = A3 = A2 = A0 = VIL, A1 = VIH)
Time out 250 µs
To Verify Sector Group Protection
Write 40h to Secter Address
(A6 = A3 = A2 = A0 = VIL, A1 = VIH)
Increment PLSCNT
Read from Sector Group Address
(Addr. = SPA,
A6 = A3 = A2 = A0 = VIL, A1 = VIH)
No
PLSCNT = 25?
Yes
Remove VID from RESET
Write Reset Command
No
Setup Next Sector
Group Address
Data = 01h?
Yes
Yes
Protect Other Sector
Group?
No
Remove VID from RESET
Write Reset Command
Device Failed
Sector Group Protection
Completed
65
MBM29DL32TF/BF-70
8. Embedded ProgramTM Algorithm for Fast Mode
FAST MODE ALGORITHM
Start
555h/AAh
Set Fast Mode
2AAh/55h
555h/20h
XXXh/A0h
Program Address/Program Data
Data Polling
In Fast Program
Verify Data?
No
Yes
Increment Address
No
Last Address
?
Yes
Programming Completed
(BA) XXXh/90h
Reset Fast Mode
XXXh/F0h
Notes : • The sequence is applied for × 16 mode.
• The addresses differ from × 8 mode.
66
MBM29DL32TF/BF-70
■ ORDERING INFORMATION
Part No.
Package
Access Time (ns)
48-pin plastic TSOP (1)
(FPT-48P-M19)
(Normal Bend)
70
MBM29DL32TF70PBT
48-pin plastic FBGA
(BGA-48P-M12)
70
MBM29DL32BF70TN
48-pin plastic TSOP (1)
(FPT-48P-M19)
(Normal Bend)
70
48-pin plastic FBGA
(BGA-48P-M12)
70
MBM29DL32TF70TN
MBM29DL32BF70PBT
MBM29DL32
T
F
70
Sector Architecture
Top Sector
Bottom Sector
TN
PACKAGE TYPE
TN = 48-Pin Thin Small Outline Package
(TSOP (1) ) Normal Bend
PBT = 48-ball Fine pitch Ball Grid Array
Package (FBGA)
SPEED OPTION
See Product Selector Guide
DEVICE REVISION
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
DEVICE NUMBER/DESCRIPTION
MBM29DL32
32 Mega-bit (4 M × 8-Bit or 2 M × 16-Bit) Dual Operation Flash Memory
3.0 V-only Read, Program, and Erase
67
MBM29DL32TF/BF-70
■ PACKAGE DIMENSIONS
Note 1) * : Values do not include resin protrusion.
Resin protrusion and gate protrusion are +0.15 (.006) Max (each side) .
Note 2) Pins width and pins thickness include plating thickness.
Note 3) Pins width do not include tie bar cutting remainder.
48-pin plastic TSOP (1)
(FPT-48P-M19)
LEAD No.
1
48
INDEX
Details of "A" part
0.25(.010)
0~8˚
0.60±0.15
(.024±.006)
24
25
* 12.00±0.20
20.00±0.20
(.787±.008)
* 18.40±0.20
(.724±.008)
"A"
0.10(.004)
(.472±.008)
+0.10
1.10 –0.05
+.004
.043 –.002
(Mounting
height)
+0.03
0.17 –0.08
+.001
.007 –.003
C
0.10±0.05
(.004±.002)
(Stand off height)
0.50(.020)
0.22±0.05
(.009±.002)
0.10(.004)
M
2003 FUJITSU LIMITED F48029S-c-6-7
Dimensions in mm (inches)
Note : The values in parentheses are reference values.
(Continued)
68
MBM29DL32TF/BF-70
(Continued)
48-pin plastic FBGA
(BGA-48P-M12)
+0.15
9.00±0.20(.354±.008)
+.006
1.05 –0.10 .041 –.004
(Mounting height)
0.38±0.10(.015±.004)
(Stand off)
5.60(.220)
0.80(.031)TYP
6
5
INDEX
6.00±0.20
(.236±.008)
4
4.00(.157)
3
2
1
H
C0.25(.010)
G
F
E
D
48-ø0.45±0.10
(48-ø.018±.004)
C
B
A
ø0.08(.003)
M
0.10(.004)
C
2001 FUJITSU LIMITED B48012S-c-3-3
Dimensions in mm (inches)
Note : The values in parentheses are reference values.
69
MBM29DL32TF/BF-70
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
responsibility arising out of such use of the information. Fujitsu
assumes no liability for any damages whatsoever arising out of
the use of the information.
Any information in this document, including descriptions of
function and schematic diagrams, shall not be construed as license
of the use or exercise of any intellectual property right, such as
patent right or copyright, or any other right of Fujitsu or any third
party or does Fujitsu warrant non-infringement of any third-party’s
intellectual property right or other right by using such information.
Fujitsu assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result
from the use of information contained herein.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile
launch control in weapon system), or (2) for use requiring
extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the prior
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of those products from Japan.
F0311
 FUJITSU LIMITED Printed in Japan
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