FDW2509NZ Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • 7.1 A, 20 V. RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 2.5 V • Extended VGSS range (±12V) for battery applications • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications Li-Ion Battery Pack G2 S2 S2 D2 G1 S1 S1 D1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±12 ID Drain Current – Continuous 7.1 (Note 1a) – Pulsed PD Power Dissipation for Single Operation TJ, TSTG A 30 (Note 1a) 1.6 (Note 1b) 1.1 W –55 to +150 °C (Note 1a) 77 °C/W (Note 1b) 114 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2509NZ FDW2509NZ 13’’ 12mm 3000 units 2005 Fairchild Semiconductor Corporation FDW2509NZ Rev C(W) FDW2509NZ January 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V On Characteristics VDS = 16 V, 20 V 11 VGS = 0 V mV/°C 1 µA ± 10 µA (Note 2) ID = 250 µA VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C –3 15 18 20 ID(on) On–State Drain Current VGS = 4.5 V, ID = 7.1 A VGS = 2.5 V, ID = 6.2 A VGS = 4.5 V, ID = 7.1A, TJ=125°C VGS = 4.5 V, VDS = 5 V Forward Transconductance VDS = 5 V, ID = 7.1 A 36 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 1263 pF gFS (Note 4) 0.6 0.8 1.5 V mV/°C 20 26 29 30 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics 327 pF 179 pF VGS = 15 mV, f = 1.0 MHz 1.9 Ω VDD = 10 V, VGS = 4.5 V, 11 20 ns ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time 15 27 td(off) Turn–Off Delay Time 27 43 ns tf Qg Qgs Turn–Off Fall Time Total Gate Charge Gate–Source Charge 12 13 2 22 19 ns nC nC Qgd Gate–Drain Charge VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 7.1 A, 4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A IF = 7.1 A, diF/dt = 100 A/µs (Note 2) 1.3 A 1.2 V 20 nS 14 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. ID(on) parameter is guaranteed by design and will not be subjected to 100% production testing. Please refer to Fig 1 (On-Region Characteristics). FDW2509NZ Rev. C(W) FDW2509NZ Electrical Characteristics FDW2509NZ Typical Characteristics 2.5V 3.5V 25 ID, DRAIN CURRENT (A) 1.8 VGS = 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 2.0V 20 1.8V 15 10 5 VGS = 2.0V 1.6 1.4 2.5V 1.2 3.0V 3.5V 4.5V 1 0.8 0 0 1 2 3 0 4 5 10 Figure 1. On-Region Characteristics. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.2 1 0.8 0.6 30 0 25 50 75 100 125 ID = 3.6A 0.04 TA = 125oC 0.03 o TA = 25 C 0.02 0.01 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 30 5 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) 125oC 25 4 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 25o TA = -55oC VDS = 5V 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. ID, DRAIN CURRENT (A) 25 0.05 ID = 7.1A VGS = 4.5V -25 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 -50 15 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 20 15 10 5 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2509NZ Rev. C(W) FDW2509NZ Typical Characteristics 2000 VDS = 5V ID = 7.1A f = 1MHz VGS = 0 V 10V 4 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1500 CISS 1000 COSS 500 1 CRSS 0 0 0 4 8 12 16 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 12 16 20 Figure 8. Capacitance Characteristics. 100 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100us 1ms 10 10ms 100ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE RθJA = 114oC/W 0.1 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 114°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =114 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2509NZ Rev. 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A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15