AOSMD AO4708 N-channel enhancement mode field effect transistor Datasheet

AO4708
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
Features
TM
SRFET
AO4708 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent RDS(ON),and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Standard Product AO4708 is Pb-free (meets ROHS
& Sony 259 specifications). AO4708L is a Green
Product ordering option. AO4708L and AO4708 are
electrically identical.
VDS (V) = 30V
ID =15A (VGS = 10V)
RDS(ON) < 8.7mΩ (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
D
D
D
D
S
S
S
G
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C
Pulsed Drain Current B
B
Repetitive avalanche energy L=0.3mH
B
TA=25°C
A
Power Dissipation
Junction and Storage Temperature Range
A
V
80
A
IAR
25
A
EAR
94
mJ
3.1
W
2.0
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
12
-55 to 150
Symbol
A
±12
IDSM
IDM
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
Units
V
15
TA=70°C
Avalanche Current
Maximum
30
RθJA
RθJL
Typ
32
60
17
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
AO4708
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
VDS=24V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.4
VGS=4.5V, VDS=5V
80
TJ=125°C
VGS=10V, ID=15A
TJ=125°C
VGS=4.5V, ID=14A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
IS
VDS=5V, ID=15A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
20
1.8
0.1
µA
2.4
V
7.2
8.7
10.5
13.1
8.6
10.5
mΩ
0.5
V
5.5
A
3360
pF
85
0.39
VGS=10V, VDS=15V, ID=15A
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
mΩ
S
390
pF
145
VGS=0V, VDS=0V, f=1MHz
mA
A
2800
VGS=0V, VDS=15V, f=1MHz
Units
V
0.1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
IDSS
RDS(ON)
Typ
pF
0.8
1.5
Ω
42
52
nC
19
nC
7
nC
6
nC
7
ns
7
ns
31
ns
5
ns
trr
Body Diode Reverse Recovery Time
IF=15A, dI/dt=300A/µs
13
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=300A/µs
12
15
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Sept. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT
OF SUCH
APPLICATIONS
OR USES Ltd.
OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Alpha
& Omega
Semiconductor,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
30
6V
8V
100
10V
4.5V
80
20
3.5V
60
ID(A)
ID (A)
VDS=5V
25
4V
40
125°
15
25°C
10
20
5
VGS=3V
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Figure 1: On-Region Characteristics
3
3.5
4
1.8
10
Normalized On-Resistance
11
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
12
VGS=4.5V
9
8
7
VGS=10V
6
5
4
ID=15A
1.6
VGS=10V
1.4
VGS=4.5V
1.2
ID=14A
1
0.8
0
10
20
30
40
50
60
0
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
16
ID=15A
14
1.0E+01
125°C
125°C
1.0E+00
12
IS (A)
RDS(ON) (mΩ)
2
10
8
25°C
1.0E-01
1.0E-02
1.0E-03
25°C
6
1.0E-04
1.0E-05
4
2
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4500
10
4000
3500
VDS=15V
ID=15A
6
Capacitance (pF)
VGS (Volts)
8
4
Ciss
3000
2500
2000
1500
Crss
1000
2
Coss
500
0
0
10
20
30
40
0
50
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
Power (W)
ID (Amps)
70
10ms
10s
0.1s
DC
1s
0.1
0.1
60
50
40
30
TJ(Max)=150°C
TA=25°C
0.0
30
TJ(Max)=150°C
TA=25°C
80
1ms
1.0
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
90
100µs
RDS(ON)
limited
10
100
10µs
10.0
5
20
10
1
10
100
VDS (Volts)
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.001
0.00001
0.0001
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
0.001
0.01
0.1
Ton
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
1.0E-02
0.8
30A
VDS=24V
20A
VSD(V)
VDS=12V
1.0E-04
1.0E-05
0.6
5A
0.4
0
0
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
50
50
35
16
25ºC
30
12
25
Qrr
8
125ºC
9
8
5
10
15
20
25
30
25ºC
Qrr
trr (ns)
6
10
15
20
25
30
2.5
Is=20A
2.0
25ºC
1.5
12
10
trr
25ºC
8
3
5
125ºC
16
Irm (A)
Qrr (nC)
125ºC
20
0.0
14
9
0.3
18
12
25ºC
125ºC
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
125ºC
30
0.6
S
Is=20A
0.9
25ºC
S
0
15
40
1.2
trr
7
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
50
1.5
4
0
0
10
1.8
25ºC
5
25ºC
0
2.1
125ºC
6
4
Irm
2.4
di/dt=1000A/us
10
15
5
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
11
125ºC
trr (ns)
di/dt=1000A/us
40
50
12
Irm (A)
45
Qrr (nC)
0
20
10
IS=1A
0.2
1.0E-06
20
10A
S
125ºC
6
1.0
0.5
Irm
0
0
600
800
1000
1200
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
0
200
400
Alpha & Omega Semiconductor, Ltd.
S
IR (A)
1.0E-03
4
0
200
400
600
800
1000
0.0
1200
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
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