Rohm DTA114EE Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor Datasheet

DTA114EM / DTA114EE / DTA114EUA
DTA114EKA / DTA114ESA
Transistors
−100mA / −50V Digital transistors
(with built-in resistors)
DTA114EM / DTA114EE / DTA114EUA /
DTA114EKA / DTA114ESA
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
(see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zDimensions (Unit : mm)
0.7
1.6
DTA114EE
0.55
0.3
0.2
1.2
0.32
(3)
0.8
0.8
1.2
0.2
(1)(2)
0.22
0.4 0.4
(2)
0.13
(1) IN
(2) GND
(3) OUT
0.5
0.8
0.2
0.2
1.0
ROHM : EMT3
Abbreviated symbol : 14
2.0
0.8
(3)
1.6
2.8
2.1
1.25
0.15
1.3
0.1Min.
(1)
(2)
0.65 0.65
Each lead has same dimensions
4.0
(2)
(1) GND
(2) IN
(3) OUT
Abbreviated symbol : 14
(1)
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : 14
2.0
(15Min.)
3Min.
3.0
DTA114ESA
1.1
0.4
(3)
ROHM : UMT3
EIAJ : SC-70
2.9
0.7
0.2
0.3
Each lead has same dimensions
Abbreviated symbol : 14
DTA114EKA
0.9
(1) GND
(2) IN
(3) OUT
0.3Min.
DTA114EUA
0.15
0.5 0.5
Each lead has same dimensions
ROHM : VMT3
(1)
0.1Min.
(3)
1.6
DTA114EM
0.45
2.5
0.5
0.45
5.0
ROHM : SPT
EIAJ : SC-72
(1) (2) (3)
Abbreviated symbol : A114ES
(1) GND
(2) OUT
(3) IN
Rev.B
1/3
DTA114EM / DTA114EE / DTA114EUA
DTA114EKA / DTA114ESA
Transistors
zPackaging specifications
Type
zEquivalent circuit
Package
VMT3
EMT3
UMT3
SMT3
SPT
Packaging type
Taping
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
TP
Basic ordering
unit (pieces)
8000
3000
3000
3000
5000
−
−
−
−
−
−
−
−
−
OUT
R1
IN
R2
GND(+)
DTA114EM
DTA114EE
−
DTA114EUA
−
−
DTA114EKA
−
−
−
DTA114ESA
−
−
−
OUT
IN
GND(+)
−
−
R1=R2=10kΩ
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
DTA114EM
DTA114EE DTA114EUA DTA114EKA DTA114ESA
Unit
Supply voltage
VCC
−50
V
Input voltage
VIN
−40 to +10
V
IO
−50
IC(Max.)
−100
Output current
150
mA
Power dissipation
Pd
Junction temperature
Tj
150
200
300
°C
Storage temperature
Tstg
−55 to +150
°C
mW
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Symbol Min.
Typ.
Max.
VI(off)
−
−
−0.5
Unit
Conditions
VI(on)
−3
−
−
V
VO(on)
−
−
−0.3
V
II
−
−
−0.88
mA
IO(off)
−
−
−0.5
µA
VCC=−50V, VI=0V
GI
30
−
−
−
VO=−5V, IO=−5mA
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−10mA
IO/II=−10mA/−0.5mA
VI=−5V
Input resistance
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1
0.8
1
1.2
−
−
−
250
−
MHz
Transition frequency
fT ∗
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
Rev.B
2/3
DTA114EM / DTA114EE / DTA114EUA
DTA114EKA / DTA114ESA
Transistors
zElectrical characteristic curves
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
−20
−10
−5
−2
Ta=−40°C
25°C
100°C
−1
−500m
−200m
−100m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
−1
OUTPUT VOLTAGE : VO(on) (V)
−500m
−200m
−10m
−5m
VO=−0.3V
−50
−2m
−1m
−500µ
Ta=100°C
25°C
−40°C
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
0
1k
VCC=−5V
500
DC CURRENT GAIN : GI
−100
200
VO=−5V
Ta=100°C
25°C
−40°C
100
50
20
10
5
2
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
lO/lI=20
Ta=100°C
25°C
−40°C
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Rev.B
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
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About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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