Panasonic GN1010 Gaas n-channel mes ic Datasheet

GN1010
GaAs MMICs
GN1010
GaAs N-Channel MES IC
Unit : mm
For high-output high-gain amplification
+0.2
2.8 –0.3
+0.2
0.65±0.15
1.5 –0.3
0.65±0.15
■ Features
Parameter
Symbol
Rating
VDS
6
Power supply voltage
2
+0.1
0.8
0.4±0.2
Unit
1 : Source
2 : Drain
3:C
4 : Gate
Mini Type Package (4-pin)
V
VGS
–4
V
Drain current
ID
45
mA
Gate current
IG
3
mA
Allowable power dissipation
PD
200
mW
Channel temperature
Tch
150
˚C
Storage temperature
Tstg
– 55 to +150
˚C
0.4 –0.05
+0.1
+0.2
1.1 –0.1
■ Absolute Maximum Ratings (Ta = 25˚C)
3
0.16 –0.06
With bandwidth control pin
1
0 to 0.1
●
0.95
Low noise
1.9±0.2
●
0.5R
4
0.95
General-use wide-band amplifier
2.9±0.2
●
■ Equivalent Circuit
2
3
4
1
■ Electrical Characteristics (Ta = 25˚C)
Parameter
IDD * 1
Noise figure
NF * 2
Power gain
PG * 2
IdB compression output
PO * 2
*1
Condition
Symbol
Drain current
VDS= 3V
Min
Typ
Max
5
30
45
mA
2
3
dB
VDS= 3V, f= 0.5GHz
VDS= 3V, f=1.8GHz
VDS= 3V, f= 0.5GHz
VDS= 3V, f= 0.5GHz
*2
Rank
P
Q
R
IDD(mA)
5 to 20
15 to 30
25 to 45
NF, PG, PO test circuit
dB
9
8
VDS= 3V, f=1.8GHz
IDD rank classification
10
5
VDS= 3V, f=1.8GHz
Unit
15
dBm
VD
C = 1000 pF
Cc = 200 pF
C
Cf = 27 pF
Cc
C
Cf
Cc
G
S
GN1010
GaAs MMICs
PG, NF – f
| S21 |, | S12 | – f
30
PG
8
6
NF
4
2
0.3
1
Frequency
3
f
20
| S21 |
10
0
–10
| S12 |
–20
–30
10
10
20
VDD=3V
Ta=25˚C
30
100
300
VDD=3V
Ta=25˚C
10
0
| S22 |
–10
–20
| S11 |
–30
–40
10
1000 3000 10000
30
Frequency f (MHz)
(GHz)
100
300
1000 3000 10000
Frequency f
NF, PG – f
(MHz)
Pout, IM2, IM3 – Pin
20
40
VDD=3V
Cf=27pF
VDD=3V
Cf=27pF
I.P
20
PG
10
2
NF
1
0
0
0.1
0.3
0.5
1.0
0
Pout, IM2, IM3 (dBm)
3
Power gain PG (dB)
0
0.1
Noise figure NF (dB)
Power gain
PG
(dB)
10
Noise figure NF (dB)
Forward transfer gain, Reverse transfer gain
| S21 | , | S12 | (dB)
VDD=3V
Ta=25˚C
Forward transfer gain, Reverse transfer gain
| S11 | , | S22 | (dB)
12
| S11 |, | S22 | – f
Pout
–20
IM3
IM2
–40
2.0
Frequency f (GHz)
–60
–90MHz
–500MHz
–1800MHz
–80
–40
–20
0
Pin (dBm)
20
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