IXYS IXFN24N100F Hiperrf power mosfet Datasheet

Advance Technical Information
HiPerRFTM
Power MOSFETs
IXFN 24N100F
VDSS
ID25
F-Class: MegaHertz Switching
RDS(on)
D
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
S
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
24
A
TC = 25°C, pulse width limited by TJM
96
A
IAR
TC = 25°C
24
A
EAR
TC = 25°C
60
mJ
EAS
TC = 25°C
3.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
10
V/ns
PD
TC = 25°C
600
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
-
°C
2500
3000
V~
V~
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
t = 1 min
t=1s
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
Weight
miniBLOC, SOT-227 B
E153432
S
G
IDM
1.6 mm (0.63 in) from case for 10 s
g
S
D
G = Gate
S = Source
Features
l
l
l
l
l
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
l
l
VDSS
V GS = 0 V, ID = 1 mA
1000
VGH(th)
V DS = VGS, ID = 8 mA
3.0
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
V DS = VDSS
V GS = 0 V
RDS(on)
TJ = 25°C
TJ = 125°C
V GS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2002 IXYS All rights reserved
V
5.5
V
±200
nA
100 µA
3 mA
0.39
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
l
Test Conditions
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
l
Symbol
V
A
Ω
trr ≤ 250 ns
Symbol
TJ
1000
24
0.39
G
S
TJ
=
=
=
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
l
l
l
Easy to mount
Space savings
High power density
Ω
98875 (1/02)
IXFN 24N100F
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
16
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
24
S
6600
pF
760
pF
230
pF
td(on)
22
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
18
ns
td(off)
RG = 1 Ω (External),
52
ns
11
ns
195
nC
40
nC
100
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.21
RthCK
0.05
Source-Drain Diode
K/W
K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
24
A
ISM
Repetitive;
pulse width limited by TJM
96
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
QRM
IRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
250
ns
µC
A
1.4
10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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