Anpec APM9968C N-channel enhancement mode mosfet Datasheet

APM9968C
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V
RDS(ON)=20mΩ(typ.) @ VGS=2.5V
•
Super High Dense Cell Design for Extremely
D
1
8
D
S1
2
7
S2
S1
3
6
S2
G1
4
5
G2
Low RDS(ON)
•
•
Reliable and Rugged
TSSOP-8
TSSOP-8 Packages
D
Applications
•
G1
G2
Power Management in Notebook Computer ,
S1
Portable Equipment and Battery Powered
Systems.
•
D
S1
S2
S2
N-Channel MOSFET
Zener Diode Protected Gate Provide
Human Body Mode Electrostatic Discharge
Protection to 2500 V.
Ordering and Marking Information
APM9968C
Package Code
O : TSSOP-8
Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Handling Code
Temp. Range
Package Code
APM9968C O :
APM9968C
XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
1
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APM9968C
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±8
ID*
Maximum Drain Current – Continuous
6
IDM
Maximum Drain Current – Pulsed
20
PD
Maximum Power Dissipation
TJ
Maximum Junction Temperature
V
A
TA=25°C
1
TA=100°C
0.4
TSTG
Storage Temperature Range
RθJA*
Thermal Resistance – Junction to Ambient
Unit
W
150
°C
-55 to 150
°C
80
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM9968C
Typ.
Max.
Min.
Unit
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=250µA
IDSS
Zero Gate Voltage Drain
Current
VDS=16V , VGS=0V
VGS(th)
Gate Threshold Voltage
VDS=VGS , IDS=250µA
Gate Leakage Current
Drain-Source On-state
VGS=±8V , VDS=0V
VGS=4.5V , IDS=6A
16
20
Resistance
VGS=2.5V , IDS=5.2A
20
25
Diode Forward Voltage
ISD=0.5A , VGS=0V
0.7
1.3
VDS=10V , IDS= 6A
19
25
VGS=4.5V ,
2
IGSS
RDS(ON)a
VSDa
20
0.6
V
0.7
1
µA
1
V
±10
µA
mΩ
V
b
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
37
68
Tr
Turn-on Rise Time
VDD=10V , IDS=6A ,
33
62
td(OFF)
Turn-off Delay Time
VGEN=4.5V , RG=6Ω
100
182
54
100
Tf
5
Turn-off Fall Time
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
nC
2
ns
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APM9968C
Electrical Characteristics Cont.
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM9968C
Typ.
Max.
Min.
Ciss
Input Capacitance
VGS=0V
1253
Coss
Output Capacitance
VDS=15V
340
Crss
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a
b
Unit
pF
260
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
3
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APM9968C
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
20
VGS=1.8,2,3,4,5,6,7,8,9,10V
ID-Drain Current (A)
ID-Drain Current (A)
16
12
VGS=1.5V
8
4
16
12
TJ=125°C
8
TJ=25°C
TJ=-55°C
4
VGS=1V
0
0
2
4
6
0
0.0
8
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
0.022
1.6
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
IDS=250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
0.021
0.020
VGS=2.5V
0.019
0.018
0.017
0.016
VGS=4.5V
0.015
0.014
-25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
0
4
8
12
16
20
ID - Drain Current (A)
4
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APM9968C
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
1.8
0.044
0.040
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS(ON)-On-Resistance (Ω)
ID=6A
0.036
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0
1
2
3
4
5
6
7
1.6
VGS=4.5V
ID=6A
1.4
1.2
1.0
0.8
0.6
0.4
-50
8
VGS - Gate-to-Source Voltage (V)
-25
0
25
75
100 125 150
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
2500
5
Frequency=1MHz
V DS =10V
ID=6A
2000
4
Capacitance (pF)
VGS-Gate-Source Voltage (V)
50
3
2
1500
Ciss
1000
1
500
0
0
Coss
Crss
0
4
8
12
16
20
24
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
5
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APM9968C
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
20
60
48
Power (W)
IS-Source Current (A)
10
TJ=25°C
TJ=150°C
1
36
24
12
0.1
0.0
0.4
0.8
1.2
0
0.01
1.6
0.1
VSD -Source-to-Drain Voltage (V)
1
10
100
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
2
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.T JM -T A =P DM ZthJA
4.Surface Mounted
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
6
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APM9968C
Packaging Information
TSSOP-8
e
8 7
2x E/2
E1
( 2)
E
GAUGE
PLANE
S
1 2
e/2
0.25
D
L
A2
A
b
Dim
A
A1
A2
b
D
e
E
E1
L
L1
R
R1
S
φ1
φ2
φ3
1
(L1)
( 3)
A1
Millimeters
Min.
Inches
Max.
1.2
0.15
1.05
0.30
3.1
0.00
0.80
0.19
2.9
Min.
0.000
0.031
0.007
0.114
0.65 BSC
6.40 BSC
4.30
0.45
0.026 BSC
0.252 BSC
4.50
0.75
0.169
0.018
8°
0.004
0.004
0.008
0°
1.0 REF
0.09
0.09
0.2
0°
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
Max.
0.047
0.006
0.041
0.012
0.122
0.177
0.030
0.039REF
12° REF
12° REF
8°
12° REF
12° REF
7
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APM9968C
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
8
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM9968C
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TSSOP-8
A
B
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
330 ± 1
2 + 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
2.0 ± 0.1 7.0 ± 0.1
9
3.6 ± 0.3
1.6 ± 0.1 0.3±0.013
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APM9968C
Cover Tape Dimensions
Application
TSSOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
10
www.anpec.com.tw
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